Synthesis of high-purity boron nitride single crystals under high pressure by using Ba–BN solvent
High-purity cubic boron nitride (cBN) and hexagonal boron nitride (hBN) single crystals were synthesised at 4.5 GPa and 1500 °C using barium boron nitride as a solvent. Secondary ion mass spectrometry was used to analyse impurities in the crystals. Fine cBN and hBN crystals, whose oxygen and carbon...
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| Published in | Journal of crystal growth Vol. 303; no. 2; pp. 525 - 529 |
|---|---|
| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
Amsterdam
Elsevier B.V
01.05.2007
Elsevier |
| Subjects | |
| Online Access | Get full text |
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| Abstract | High-purity cubic boron nitride (cBN) and hexagonal boron nitride (hBN) single crystals were synthesised at 4.5
GPa and 1500
°C using barium boron nitride as a solvent. Secondary ion mass spectrometry was used to analyse impurities in the crystals. Fine cBN and hBN crystals, whose oxygen and carbon concentrations were less than 10
18
atoms/cm
3, were obtained, and their band-edge optical properties were measured by cathodoluminescence spectroscopy. High-purity hBN single crystals exhibited intense ultraviolet emission, demonstrating their promise for use as deep ultraviolet-light emitters. |
|---|---|
| AbstractList | High-purity cubic boron nitride (cBN) and hexagonal boron nitride (hBN) single crystals were synthesised at 4.5GPa and 1500 deg C using barium boron nitride as a solvent. Secondary ion mass spectrometry was used to analyse impurities in the crystals. Fine cBN and hBN crystals, whose oxygen and carbon concentrations were less than 1018atoms/cm3, were obtained, and their band-edge optical properties were measured by cathodoluminescence spectroscopy. High-purity hBN single crystals exhibited intense ultraviolet emission, demonstrating their promise for use as deep ultraviolet-light emitters. High-purity cubic boron nitride (cBN) and hexagonal boron nitride (hBN) single crystals were synthesised at 4.5 GPa and 1500 °C using barium boron nitride as a solvent. Secondary ion mass spectrometry was used to analyse impurities in the crystals. Fine cBN and hBN crystals, whose oxygen and carbon concentrations were less than 10 18 atoms/cm 3, were obtained, and their band-edge optical properties were measured by cathodoluminescence spectroscopy. High-purity hBN single crystals exhibited intense ultraviolet emission, demonstrating their promise for use as deep ultraviolet-light emitters. |
| Author | Watanabe, K. Taniguchi, T. |
| Author_xml | – sequence: 1 givenname: T. surname: Taniguchi fullname: Taniguchi, T. email: taniguchi.takashi@nims.go.jp – sequence: 2 givenname: K. surname: Watanabe fullname: Watanabe, K. email: watanabe.kenji.aml@nims.go.jp |
| BackLink | http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18740117$$DView record in Pascal Francis |
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| CODEN | JCRGAE |
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| Cites_doi | 10.1016/S0022-0248(00)00907-6 10.1143/JJAP.41.L109 10.1126/science.208.4446.873 10.1038/nmat1134 10.1002/pssa.200405188 10.1002/pssa.200405191 10.1016/j.diamond.2004.02.013 |
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| Keywords | 78.55.Cr A2. High-pressure crystal growth B2. Semiconducting III–V materials A2. Growth from High-temperature solutions A1. Impurities B1. Boron nitride 81.05.Ea B2. Ultraviolet light luminescence Crystal growth Cubic lattices Barium Al. Impurities; A2. Growth from High-temperature solutions; A2. High-pressure crystal growth; Bl. Boron nitride; B2. Semiconducting III-V materials; B2. Ultraviolet light luminescence Boron nitrides Luminescence Secondary ion mass spectrometry Cathodoluminescence High pressure Monocrystals Hexagonal crystals Optical properties Crystal growth from solutions 78.55.Cr; 81.05.Ea III-V semiconductors |
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| References | Watanabe, Taniguchi, Kanda (bib8) 2004; 3 B Fukunaga, Nakano, Taniguchi (bib11) 2004; 13 C without additives. Specimens implanted with 60-keV Barium boron nitride was synthesised by reacting barium nitride (Ba and BN at 1000 Taniguchi, Teraji, Koizumi, Watanabe, Yamaoka (bib4) 2002; 41 SIMS standard specimen for measuring the oxygen and carbon concentrations was prepared as follows. The cBN polycrystals for the SIMS standard specimen were prepared by HP reaction sintering from hBN at 7.7 C in a dry nitrogen atmosphere. Although the chemical composition of the synthesised compound was Ba Watanabe, Taniguchi, Kanda (bib7) 2004; 201 GPa and 2100 . N Wentorf, DeVries, Bundy (bib1) 1980; 208 Taniguchi, Watanabe, Koizumi (bib6) 2004; 201 C ions were prepared to achieve concentrations of 10 ions/cm R.C. DeVries, GE Technical Report, 72CRD178, General Electric Co., USA, 1972. Taniguchi, Yamaoka (bib5) 2001; 222 O or 55-keV Mishima, Era (bib3) 2000 its X-ray diffraction data was not found by JCPDS data. The composition of the compound was unknown. 10.1016/j.jcrysgro.2006.12.061_bib2 Fukunaga (10.1016/j.jcrysgro.2006.12.061_bib11) 2004; 13 Watanabe (10.1016/j.jcrysgro.2006.12.061_bib7) 2004; 201 10.1016/j.jcrysgro.2006.12.061_bib10 Mishima (10.1016/j.jcrysgro.2006.12.061_bib3) 2000 Taniguchi (10.1016/j.jcrysgro.2006.12.061_bib5) 2001; 222 Watanabe (10.1016/j.jcrysgro.2006.12.061_bib8) 2004; 3 10.1016/j.jcrysgro.2006.12.061_bib9 Taniguchi (10.1016/j.jcrysgro.2006.12.061_bib6) 2004; 201 Taniguchi (10.1016/j.jcrysgro.2006.12.061_bib4) 2002; 41 Wentorf (10.1016/j.jcrysgro.2006.12.061_bib1) 1980; 208 |
| References_xml | – volume: 41 start-page: L109 year: 2002 ident: bib4 publication-title: Jpn. J. Appl. Phys. – volume: 208 start-page: 873 year: 1980 ident: bib1 publication-title: Science – reference: O or 55-keV – reference: GPa and 2100 – reference: ions/cm – volume: 13 start-page: 1709 year: 2004 ident: bib11 publication-title: Diamond Relat. Mater. – reference: Barium boron nitride was synthesised by reacting barium nitride (Ba – reference: B – reference: , its X-ray diffraction data was not found by JCPDS data. The composition of the compound was unknown. – reference: ) and BN at 1000 – reference: R.C. DeVries, GE Technical Report, 72CRD178, General Electric Co., USA, 1972. – reference: SIMS standard specimen for measuring the oxygen and carbon concentrations was prepared as follows. The cBN polycrystals for the SIMS standard specimen were prepared by HP reaction sintering from hBN at 7.7 – volume: 222 start-page: 549 year: 2001 ident: bib5 publication-title: J. Crystal Growth – volume: 201 start-page: 2573 year: 2004 ident: bib6 publication-title: Phys. Stat. Sol. A – reference: C ions were prepared to achieve concentrations of 10 – volume: 201 start-page: 2561 year: 2004 ident: bib7 publication-title: Phys. Stat. Sol. A – reference: °C in a dry nitrogen atmosphere. Although the chemical composition of the synthesised compound was Ba – reference: °C without additives. Specimens implanted with 60-keV – reference: N – start-page: 495 year: 2000 ident: bib3 publication-title: Electric Refractory Materials – volume: 3 start-page: 404 year: 2004 ident: bib8 publication-title: Nat. Mater. – reference: . – volume: 222 start-page: 549 year: 2001 ident: 10.1016/j.jcrysgro.2006.12.061_bib5 publication-title: J. Crystal Growth doi: 10.1016/S0022-0248(00)00907-6 – volume: 41 start-page: L109 year: 2002 ident: 10.1016/j.jcrysgro.2006.12.061_bib4 publication-title: Jpn. J. Appl. Phys. doi: 10.1143/JJAP.41.L109 – ident: 10.1016/j.jcrysgro.2006.12.061_bib9 – volume: 208 start-page: 873 year: 1980 ident: 10.1016/j.jcrysgro.2006.12.061_bib1 publication-title: Science doi: 10.1126/science.208.4446.873 – ident: 10.1016/j.jcrysgro.2006.12.061_bib2 – start-page: 495 year: 2000 ident: 10.1016/j.jcrysgro.2006.12.061_bib3 – volume: 3 start-page: 404 year: 2004 ident: 10.1016/j.jcrysgro.2006.12.061_bib8 publication-title: Nat. Mater. doi: 10.1038/nmat1134 – volume: 201 start-page: 2561 year: 2004 ident: 10.1016/j.jcrysgro.2006.12.061_bib7 publication-title: Phys. Stat. Sol. A doi: 10.1002/pssa.200405188 – volume: 201 start-page: 2573 year: 2004 ident: 10.1016/j.jcrysgro.2006.12.061_bib6 publication-title: Phys. Stat. Sol. A doi: 10.1002/pssa.200405191 – volume: 13 start-page: 1709 year: 2004 ident: 10.1016/j.jcrysgro.2006.12.061_bib11 publication-title: Diamond Relat. Mater. doi: 10.1016/j.diamond.2004.02.013 – ident: 10.1016/j.jcrysgro.2006.12.061_bib10 |
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| Snippet | High-purity cubic boron nitride (cBN) and hexagonal boron nitride (hBN) single crystals were synthesised at 4.5
GPa and 1500
°C using barium boron nitride as a... High-purity cubic boron nitride (cBN) and hexagonal boron nitride (hBN) single crystals were synthesised at 4.5GPa and 1500 deg C using barium boron nitride as... |
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| SubjectTerms | A1. Impurities A2. Growth from High-temperature solutions A2. High-pressure crystal growth B1. Boron nitride B2. Semiconducting III–V materials B2. Ultraviolet light luminescence Cathodoluminescence, ionoluminescence Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science; rheology Exact sciences and technology Growth from solutions Materials science Methods of crystal growth; physics of crystal growth Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Other luminescence and radiative recombination Physics |
| Title | Synthesis of high-purity boron nitride single crystals under high pressure by using Ba–BN solvent |
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