Strained Silicon Technology: Non-Destructive High-Lateral-Resolution Characterization Through Tip-Enhanced Raman Spectroscopy

• Published in: Applied spectroscopy Vol. 78; no. 12; pp. 1245 - 1255
• Main Authors: La Penna, Giancarlo, Mancini, Chiara, Proietti, Anacleto, Buccini, Luca, Passeri, Daniele, Gambacorti, Narciso, Richy, Jérôme, Rossi, Marco
• Format: Journal Article
• Language: English
• Published: London, England SAGE Publications 01.12.2024
• Subjects: epitaxial-on-silicon-on-insulator; nanoelectronic devices; tip-enhanced Raman Spectroscopy; nanoscale; SiGe; strain and stress; TERS; strained silicon; Micro-Raman Spectroscopy; SOI; silicon–germanium; semiconductors

The semiconductor industry is undergoing a transformative phase, marked by the relentless drive for miniaturization and a constant demand for higher performance and energy efficiency. However, the reduction of metal–oxide–semiconductor field-effect transistor sizes for advanced technology nodes belo...