Strained Silicon Technology: Non-Destructive High-Lateral-Resolution Characterization Through Tip-Enhanced Raman Spectroscopy - La Penna, Giancarlo; Mancini, Chiara; Proietti, Anacleto; Buccini, Luca; Passeri, Daniele; Gambacorti, Narciso; Richy, Jérôme; Rossi, Marco (Applied spectroscopy, 2024)
Keywords: epitaxial-on-silicon-on-insulator; nanoelectronic devices; tip-enhanced Raman Spectroscopy; nanoscale; SiGe; strain and stress; TERS; strained silicon; Micro-Raman Spectroscopy; SOI; silicon–germanium; semiconductors