A Redox‐Based Ion‐Gating Reservoir, Utilizing Double Reservoir States in Drain and Gate Nonlinear Responses

• Published in: Advanced intelligent systems Vol. 5; no. 9
• Main Authors: Wada, Tomoki, Nishioka, Daiki, Namiki, Wataru, Tsuchiya, Takashi, Higuchi, Tohru, Terabe, Kazuya
• Format: Journal Article
• Language: English
• Published: Weinheim John Wiley & Sons, Inc 01.09.2023; Wiley
• Subjects: all-solid-state; Autoregressive moving average; Computation; Electrodes; Electrolytes; Errors; Glass ceramics; Integrated circuits; ion-gating reservoir; ion-gating transistor; lithium ion; Lithium ions; Memory tasks; nanoionics; neuromorphic; Nonlinear dynamics; Nonlinear response; Pattern recognition; Thin films; Transistors

Herein, physical reservoir computing with a redox‐based ion‐gating reservoir (redox‐IGR) comprising Li x WO 3 thin film and lithium‐ion conducting glass ceramic (LICGC) is demonstrated. The subject redox‐IGR successfully solves a second‐order nonlinear dynamic equation by utilizing voltage pulse dri...