Progress of Photodetectors Based on the Photothermoelectric Effect

High‐performance uncooled photodetectors operating in the long‐wavelength infrared and terahertz regimes are highly demanded in the military and civilian fields. Photothermoelectric (PTE) detectors, which combine photothermal and thermoelectric conversion processes, can realize ultra‐broadband photo...

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Published in	Advanced materials (Weinheim) Vol. 31; no. 50; pp. e1902044 - n/a
Main Authors	Lu, Xiaowei, Sun, Lin, Jiang, Peng, Bao, Xinhe
Format	Journal Article
Language	English
Published	Germany Wiley Subscription Services, Inc 01.12.2019
Subjects	Broadband Carrier transport low‐dimensional materials Materials science nanophotonics Performance enhancement photodetectors Photometers Photothermal conversion photothermoelectric effect Response time Sensors Spintronics Thermoelectric materials thermoelectrics low-dimensional materials nanophotonics photodetectors photothermoelectric effect thermoelectrics
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Abstract	High‐performance uncooled photodetectors operating in the long‐wavelength infrared and terahertz regimes are highly demanded in the military and civilian fields. Photothermoelectric (PTE) detectors, which combine photothermal and thermoelectric conversion processes, can realize ultra‐broadband photodetection without the requirement of a cooling unit and external bias. In the last few decades, the responsivity and speed of PTE‐based photodetectors have made impressive progress with the discovery of novel thermoelectric materials and the development of nanophotonics. In particular, by introducing hot‐carrier transport into low‐dimensional material–based PTE detectors, the response time has been successfully pushed down to the picosecond level. Furthermore, with the assistance of surface plasmon, antenna, and phonon absorption, the responsivity of PTE detectors can be significantly enhanced. Beyond the photodetection, PTE effect can also be utilized to probe exotic physical phenomena in spintronics and valleytronics. Herein, recent advances in PTE detectors are summarized, and some potential strategies to further improve the performance are proposed. The room‐temperature detection of long‐wavelength infrared and terahertz radiation can be realized by photothermoelectric (PTE) detectors. The responsivity and the response speed of PTE‐based photodetectors have made impressive progress with the discovery of novel thermoelectric materials and the development of nanophotonics. Beyond light detection, the PTE effect can be utilized to study novel physical phenomena in spintronics and valleytronics.
AbstractList	High‐performance uncooled photodetectors operating in the long‐wavelength infrared and terahertz regimes are highly demanded in the military and civilian fields. Photothermoelectric (PTE) detectors, which combine photothermal and thermoelectric conversion processes, can realize ultra‐broadband photodetection without the requirement of a cooling unit and external bias. In the last few decades, the responsivity and speed of PTE‐based photodetectors have made impressive progress with the discovery of novel thermoelectric materials and the development of nanophotonics. In particular, by introducing hot‐carrier transport into low‐dimensional material–based PTE detectors, the response time has been successfully pushed down to the picosecond level. Furthermore, with the assistance of surface plasmon, antenna, and phonon absorption, the responsivity of PTE detectors can be significantly enhanced. Beyond the photodetection, PTE effect can also be utilized to probe exotic physical phenomena in spintronics and valleytronics. Herein, recent advances in PTE detectors are summarized, and some potential strategies to further improve the performance are proposed. The room‐temperature detection of long‐wavelength infrared and terahertz radiation can be realized by photothermoelectric (PTE) detectors. The responsivity and the response speed of PTE‐based photodetectors have made impressive progress with the discovery of novel thermoelectric materials and the development of nanophotonics. Beyond light detection, the PTE effect can be utilized to study novel physical phenomena in spintronics and valleytronics. High‐performance uncooled photodetectors operating in the long‐wavelength infrared and terahertz regimes are highly demanded in the military and civilian fields. Photothermoelectric (PTE) detectors, which combine photothermal and thermoelectric conversion processes, can realize ultra‐broadband photodetection without the requirement of a cooling unit and external bias. In the last few decades, the responsivity and speed of PTE‐based photodetectors have made impressive progress with the discovery of novel thermoelectric materials and the development of nanophotonics. In particular, by introducing hot‐carrier transport into low‐dimensional material–based PTE detectors, the response time has been successfully pushed down to the picosecond level. Furthermore, with the assistance of surface plasmon, antenna, and phonon absorption, the responsivity of PTE detectors can be significantly enhanced. Beyond the photodetection, PTE effect can also be utilized to probe exotic physical phenomena in spintronics and valleytronics. Herein, recent advances in PTE detectors are summarized, and some potential strategies to further improve the performance are proposed. High-performance uncooled photodetectors operating in the long-wavelength infrared and terahertz regimes are highly demanded in the military and civilian fields. Photothermoelectric (PTE) detectors, which combine photothermal and thermoelectric conversion processes, can realize ultra-broadband photodetection without the requirement of a cooling unit and external bias. In the last few decades, the responsivity and speed of PTE-based photodetectors have made impressive progress with the discovery of novel thermoelectric materials and the development of nanophotonics. In particular, by introducing hot-carrier transport into low-dimensional material-based PTE detectors, the response time has been successfully pushed down to the picosecond level. Furthermore, with the assistance of surface plasmon, antenna, and phonon absorption, the responsivity of PTE detectors can be significantly enhanced. Beyond the photodetection, PTE effect can also be utilized to probe exotic physical phenomena in spintronics and valleytronics. Herein, recent advances in PTE detectors are summarized, and some potential strategies to further improve the performance are proposed.High-performance uncooled photodetectors operating in the long-wavelength infrared and terahertz regimes are highly demanded in the military and civilian fields. Photothermoelectric (PTE) detectors, which combine photothermal and thermoelectric conversion processes, can realize ultra-broadband photodetection without the requirement of a cooling unit and external bias. In the last few decades, the responsivity and speed of PTE-based photodetectors have made impressive progress with the discovery of novel thermoelectric materials and the development of nanophotonics. In particular, by introducing hot-carrier transport into low-dimensional material-based PTE detectors, the response time has been successfully pushed down to the picosecond level. Furthermore, with the assistance of surface plasmon, antenna, and phonon absorption, the responsivity of PTE detectors can be significantly enhanced. Beyond the photodetection, PTE effect can also be utilized to probe exotic physical phenomena in spintronics and valleytronics. Herein, recent advances in PTE detectors are summarized, and some potential strategies to further improve the performance are proposed.
Author	Bao, Xinhe Sun, Lin Lu, Xiaowei Jiang, Peng
Author_xml	– sequence: 1 givenname: Xiaowei surname: Lu fullname: Lu, Xiaowei organization: Chinese Academy of Sciences – sequence: 2 givenname: Lin surname: Sun fullname: Sun, Lin organization: Chinese Academy of Sciences – sequence: 3 givenname: Peng orcidid: 0000-0001-6281-5617 surname: Jiang fullname: Jiang, Peng email: pengjiang@dicp.ac.cn organization: Chinese Academy of Sciences – sequence: 4 givenname: Xinhe surname: Bao fullname: Bao, Xinhe email: xhbao@dicp.ac.cn organization: Chinese Academy of Sciences
BackLink	https://www.ncbi.nlm.nih.gov/pubmed/31483546$$D View this record in MEDLINE/PubMed
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Keywords	low-dimensional materials nanophotonics photodetectors photothermoelectric effect thermoelectrics
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Snippet	High‐performance uncooled photodetectors operating in the long‐wavelength infrared and terahertz regimes are highly demanded in the military and civilian... High-performance uncooled photodetectors operating in the long-wavelength infrared and terahertz regimes are highly demanded in the military and civilian...
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SubjectTerms	Broadband Carrier transport low‐dimensional materials Materials science nanophotonics Performance enhancement photodetectors Photometers Photothermal conversion photothermoelectric effect Response time Sensors Spintronics Thermoelectric materials thermoelectrics
Title	Progress of Photodetectors Based on the Photothermoelectric Effect
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