Electrical spin injection and transport in semiconductor nanowires: challenges, progress and perspectives
Spintronic devices are of fundamental interest for their nonvolatility and great potential for low-power electronics applications. The implementation of those devices usually favors materials with long spin lifetime and spin diffusion length. Recent spin transport studies on semiconductor nanowires...
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| Published in | Nanoscale Vol. 7; no. 1; pp. 4325 - 4337 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
England
01.01.2015
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| Online Access | Get full text |
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| Abstract | Spintronic devices are of fundamental interest for their nonvolatility and great potential for low-power electronics applications. The implementation of those devices usually favors materials with long spin lifetime and spin diffusion length. Recent spin transport studies on semiconductor nanowires have shown much longer spin lifetimes and spin diffusion lengths than those reported in bulk/thin films. In this paper, we have reviewed recent progress in the electrical spin injection and transport in semiconductor nanowires and drawn a comparison with that in bulk/thin films. In particular, the challenges and methods of making high-quality ferromagnetic tunneling and Schottky contacts on semiconductor nanowires as well as thin films are discussed. Besides, commonly used methods for characterizing spin transport have been introduced, and their applicability in nanowire devices are discussed. Moreover, the effect of spin-orbit interaction strength and dimensionality on the spin relaxation and hence the spin lifetime are investigated. Finally, for further device applications, we have examined several proposals of spinFETs and provided a perspective of future studies on semiconductor spintronics.
This review paper presents the challenges, recent progress, and perspectives of electrical spin injection and transport in semiconductor nanowires. |
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| AbstractList | Spintronic devices are of fundamental interest for their nonvolatility and great potential for low-power electronics applications. The implementation of those devices usually favors materials with long spin lifetime and spin diffusion length. Recent spin transport studies on semiconductor nanowires have shown much longer spin lifetimes and spin diffusion lengths than those reported in bulk/thin films. In this paper, we have reviewed recent progress in the electrical spin injection and transport in semiconductor nanowires and drawn a comparison with that in bulk/thin films. In particular, the challenges and methods of making high-quality ferromagnetic tunneling and Schottky contacts on semiconductor nanowires as well as thin films are discussed. Besides, commonly used methods for characterizing spin transport have been introduced, and their applicability in nanowire devices are discussed. Moreover, the effect of spin-orbit interaction strength and dimensionality on the spin relaxation and hence the spin lifetime are investigated. Finally, for further device applications, we have examined several proposals of spinFETs and provided a perspective of future studies on semiconductor spintronics.Spintronic devices are of fundamental interest for their nonvolatility and great potential for low-power electronics applications. The implementation of those devices usually favors materials with long spin lifetime and spin diffusion length. Recent spin transport studies on semiconductor nanowires have shown much longer spin lifetimes and spin diffusion lengths than those reported in bulk/thin films. In this paper, we have reviewed recent progress in the electrical spin injection and transport in semiconductor nanowires and drawn a comparison with that in bulk/thin films. In particular, the challenges and methods of making high-quality ferromagnetic tunneling and Schottky contacts on semiconductor nanowires as well as thin films are discussed. Besides, commonly used methods for characterizing spin transport have been introduced, and their applicability in nanowire devices are discussed. Moreover, the effect of spin-orbit interaction strength and dimensionality on the spin relaxation and hence the spin lifetime are investigated. Finally, for further device applications, we have examined several proposals of spinFETs and provided a perspective of future studies on semiconductor spintronics. Spintronic devices are of fundamental interest for their nonvolatility and great potential for low-power electronics applications. The implementation of those devices usually favors materials with long spin lifetime and spin diffusion length. Recent spin transport studies on semiconductor nanowires have shown much longer spin lifetimes and spin diffusion lengths than those reported in bulk/thin films. In this paper, we have reviewed recent progress in the electrical spin injection and transport in semiconductor nanowires and drawn a comparison with that in bulk/thin films. In particular, the challenges and methods of making high-quality ferromagnetic tunneling and Schottky contacts on semiconductor nanowires as well as thin films are discussed. Besides, commonly used methods for characterizing spin transport have been introduced, and their applicability in nanowire devices are discussed. Moreover, the effect of spin-orbit interaction strength and dimensionality on the spin relaxation and hence the spin lifetime are investigated. Finally, for further device applications, we have examined several proposals of spinFETs and provided a perspective of future studies on semiconductor spintronics. Spintronic devices are of fundamental interest for their nonvolatility and great potential for low-power electronics applications. The implementation of those devices usually favors materials with long spin lifetime and spin diffusion length. Recent spin transport studies on semiconductor nanowires have shown much longer spin lifetimes and spin diffusion lengths than those reported in bulk/thin films. In this paper, we have reviewed recent progress in the electrical spin injection and transport in semiconductor nanowires and drawn a comparison with that in bulk/thin films. In particular, the challenges and methods of making high-quality ferromagnetic tunneling and Schottky contacts on semiconductor nanowires as well as thin films are discussed. Besides, commonly used methods for characterizing spin transport have been introduced, and their applicability in nanowire devices are discussed. Moreover, the effect of spin-orbit interaction strength and dimensionality on the spin relaxation and hence the spin lifetime are investigated. Finally, for further device applications, we have examined several proposals of spinFETs and provided a perspective of future studies on semiconductor spintronics. This review paper presents the challenges, recent progress, and perspectives of electrical spin injection and transport in semiconductor nanowires. |
| Author | Wang, Kang L Tang, Jianshi |
| AuthorAffiliation | Department of Electrical Engineering University of California Device Research Laboratory |
| AuthorAffiliation_xml | – name: Device Research Laboratory – name: University of California – name: Department of Electrical Engineering |
| Author_xml | – sequence: 1 givenname: Jianshi surname: Tang fullname: Tang, Jianshi – sequence: 2 givenname: Kang L surname: Wang fullname: Wang, Kang L |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/25686092$$D View this record in MEDLINE/PubMed |
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| Notes | 2 Kang L. Wang received his BS degree in Electrical Engineering from National Cheng Kung University in 1964 and his PhD degree in Electrical Engineering from Massachusetts Institute of Technology in 1970. In 1970-1972, he was an Assistant Professor at MIT. In 1972-1979, he worked at the General Electric Corporate Research and Development Center as a physicist/engineer. In 1979, he joined the Electrical Engineering Department of UCLA, where he is the endowed Raytheon Professor. His research activities include semiconductor nanodevices, spintronics/ferromagnetic materials and devices, nanoscience and technology; molecular beam epitaxy, quantum structures and devices. He is an IEEE Fellow. , etc. and magnetic nanostructures. He has authored or co-authored more than 40 technical publications. Jianshi Tang received his BS degree in Electronic Engineering from Tsinghua University in 2008, and his PhD degree in Electrical Engineering from the University of California, Los Angeles (UCLA) in 2014. After working as a Staff Researcher at UCLA for three months, he then joined IBM T. J. Watson Research Center as a Postdoctoral Researcher in January 2015. His research interest involves physics and device applications of low-dimensional nanomaterials, including semiconductor nanowires and heterostructures, carbon nanotubes, two-dimensional van der Waals materials (graphene, topological insulators, MoS ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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