Directional lasing in resonant semiconductor nanoantenna arrays
High-index dielectric and semiconductor nanoparticles supporting strong electric and magnetic resonances have drawn significant attention in recent years. However, until now, there have been no experimental reports of lasing action from such nanostructures. Here, we demonstrate directional lasing, w...
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| Published in | Nature nanotechnology Vol. 13; no. 11; pp. 1042 - 1047 |
|---|---|
| Main Authors | , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
London
Nature Publishing Group UK
01.11.2018
Nature Publishing Group |
| Subjects | |
| Online Access | Get full text |
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| Abstract | High-index dielectric and semiconductor nanoparticles supporting strong electric and magnetic resonances have drawn significant attention in recent years. However, until now, there have been no experimental reports of lasing action from such nanostructures. Here, we demonstrate directional lasing, with a low threshold and high quality factor, in active dielectric nanoantenna arrays achieved through a leaky resonance excited in coupled gallium arsenide (GaAs) nanopillars. The leaky resonance is formed by partially breaking a bound state in the continuum generated by the collective, vertical electric dipole resonances excited in the nanopillars for subdiffractive arrays. We control the directionality of the emitted light while maintaining a high quality factor (
Q
= 2,750). The lasing directivity and wavelength can be tuned via the nanoantenna array geometry and by modifying the gain spectrum of GaAs with temperature. The obtained results provide guidelines for achieving surface-emitting laser devices based on active dielectric nanoantennas that are compact and highly transparent.
Active dielectric nanoantenna arrays exhibit low-threshold and high-quality-factor directional lasing achieved via a leaky resonance excited in coupled gallium arsenide (GaAs) nanopillars. |
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| AbstractList | High-index dielectric and semiconductor nanoparticles supporting strong electric and magnetic resonances have drawn significant attention in recent years. However, until now, there have been no experimental reports of lasing action from such nanostructures. Here, we demonstrate directional lasing, with a low threshold and high quality factor, in active dielectric nanoantenna arrays achieved through a leaky resonance excited in coupled gallium arsenide (GaAs) nanopillars. The leaky resonance is formed by partially breaking a bound state in the continuum generated by the collective, vertical electric dipole resonances excited in the nanopillars for subdiffractive arrays. We control the directionality of the emitted light while maintaining a high quality factor (Q = 2,750). The lasing directivity and wavelength can be tuned via the nanoantenna array geometry and by modifying the gain spectrum of GaAs with temperature. The obtained results provide guidelines for achieving surface-emitting laser devices based on active dielectric nanoantennas that are compact and highly transparent. High-index dielectric and semiconductor nanoparticles supporting strong electric and magnetic resonances have drawn significant attention in recent years. However, until now, there have been no experimental reports of lasing action from such nanostructures. Here, we demonstrate directional lasing, with a low threshold and high quality factor, in active dielectric nanoantenna arrays achieved through a leaky resonance excited in coupled gallium arsenide (GaAs) nanopillars. The leaky resonance is formed by partially breaking a bound state in the continuum generated by the collective, vertical electric dipole resonances excited in the nanopillars for subdiffractive arrays. We control the directionality of the emitted light while maintaining a high quality factor ( Q = 2,750). The lasing directivity and wavelength can be tuned via the nanoantenna array geometry and by modifying the gain spectrum of GaAs with temperature. The obtained results provide guidelines for achieving surface-emitting laser devices based on active dielectric nanoantennas that are compact and highly transparent. Active dielectric nanoantenna arrays exhibit low-threshold and high-quality-factor directional lasing achieved via a leaky resonance excited in coupled gallium arsenide (GaAs) nanopillars. High-index dielectric and semiconductor nanoparticles supporting strong electric and magnetic resonances have drawn significant attention in recent years. However, until now, there have been no experimental reports of lasing action from such nanostructures. Here, we demonstrate directional lasing, with a low threshold and high quality factor, in active dielectric nanoantenna arrays achieved through a leaky resonance excited in coupled gallium arsenide (GaAs) nanopillars. The leaky resonance is formed by partially breaking a bound state in the continuum generated by the collective, vertical electric dipole resonances excited in the nanopillars for subdiffractive arrays. We control the directionality of the emitted light while maintaining a high quality factor (Q = 2,750). The lasing directivity and wavelength can be tuned via the nanoantenna array geometry and by modifying the gain spectrum of GaAs with temperature. The obtained results provide guidelines for achieving surface-emitting laser devices based on active dielectric nanoantennas that are compact and highly transparent.High-index dielectric and semiconductor nanoparticles supporting strong electric and magnetic resonances have drawn significant attention in recent years. However, until now, there have been no experimental reports of lasing action from such nanostructures. Here, we demonstrate directional lasing, with a low threshold and high quality factor, in active dielectric nanoantenna arrays achieved through a leaky resonance excited in coupled gallium arsenide (GaAs) nanopillars. The leaky resonance is formed by partially breaking a bound state in the continuum generated by the collective, vertical electric dipole resonances excited in the nanopillars for subdiffractive arrays. We control the directionality of the emitted light while maintaining a high quality factor (Q = 2,750). The lasing directivity and wavelength can be tuned via the nanoantenna array geometry and by modifying the gain spectrum of GaAs with temperature. The obtained results provide guidelines for achieving surface-emitting laser devices based on active dielectric nanoantennas that are compact and highly transparent. |
| Author | Bakker, Reuben M. Pan, Zhenying Ha, Son Tung Emani, Naresh Kumar Fu, Yuan Hsing Paniagua-Domínguez, Ramón Kuznetsov, Arseniy I. |
| Author_xml | – sequence: 1 givenname: Son Tung surname: Ha fullname: Ha, Son Tung organization: Data Storage Institute, Agency for Science, Technology and Research, Institute of Materials Research and Engineering, Agency for Science, Technology and Research – sequence: 2 givenname: Yuan Hsing surname: Fu fullname: Fu, Yuan Hsing organization: Data Storage Institute, Agency for Science, Technology and Research, Institute of Microelectronics, Agency for Science, Technology and Research – sequence: 3 givenname: Naresh Kumar orcidid: 0000-0002-0488-921X surname: Emani fullname: Emani, Naresh Kumar organization: Data Storage Institute, Agency for Science, Technology and Research, Indian Institute of Technology – sequence: 4 givenname: Zhenying surname: Pan fullname: Pan, Zhenying organization: Data Storage Institute, Agency for Science, Technology and Research, Institute of Materials Research and Engineering, Agency for Science, Technology and Research – sequence: 5 givenname: Reuben M. surname: Bakker fullname: Bakker, Reuben M. organization: Data Storage Institute, Agency for Science, Technology and Research, Institute of Materials Research and Engineering, Agency for Science, Technology and Research – sequence: 6 givenname: Ramón orcidid: 0000-0001-7836-681X surname: Paniagua-Domínguez fullname: Paniagua-Domínguez, Ramón organization: Data Storage Institute, Agency for Science, Technology and Research, Institute of Materials Research and Engineering, Agency for Science, Technology and Research – sequence: 7 givenname: Arseniy I. surname: Kuznetsov fullname: Kuznetsov, Arseniy I. email: arseniy_kuznetsov@imre.a-star.edu.sg organization: Data Storage Institute, Agency for Science, Technology and Research, Institute of Materials Research and Engineering, Agency for Science, Technology and Research |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/30127475$$D View this record in MEDLINE/PubMed |
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| SubjectTerms | 142/126 639/624/1020/1093 639/624/399/1015 639/624/400/1021 Arrays Arsenides Chemistry and Materials Science Dielectric strength Directivity Electric dipoles Gallium Gallium arsenide Lasing Magnetic resonance Materials Science Nanoantennas Nanoparticles Nanotechnology Nanotechnology and Microengineering Q factors Quantum dots Resonance |
| Title | Directional lasing in resonant semiconductor nanoantenna arrays |
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