Effects of deposition conditions on the ferroelectric properties of (Al1−xScx)N thin films

• Published in: Journal of applied physics Vol. 128; no. 11
• Main Authors: Yasuoka, Shinnosuke, Shimizu, Takao, Tateyama, Akinori, Uehara, Masato, Yamada, Hiroshi, Akiyama, Morito, Hiranaga, Yoshiomi, Cho, Yasuo, Funakubo, Hiroshi
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 21.09.2020
• Subjects: Applied physics; Electric fields; Ferroelectric materials; Ferroelectricity; Gases; Magnetron sputtering; Polarization; Silicon dioxide; Silicon substrates; Thick films; Thickness; Thin films; Titanium oxides

The ferroelectricity of (Al1−xScx)N (x = 0–0.34) thin films with various thicknesses was investigated. (Al1−xScx)N films were prepared at 400 °C on (111)Pt/TiOx/SiO2/(001)Si substrates by the radio frequency dual-source reactive magnetron sputtering method using Al and Sc targets under pure N2 gas o...