Effects of deposition conditions on the ferroelectric properties of (Al1−xScx)N thin films
The ferroelectricity of (Al1−xScx)N (x = 0–0.34) thin films with various thicknesses was investigated. (Al1−xScx)N films were prepared at 400 °C on (111)Pt/TiOx/SiO2/(001)Si substrates by the radio frequency dual-source reactive magnetron sputtering method using Al and Sc targets under pure N2 gas o...
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| Published in | Journal of applied physics Vol. 128; no. 11 |
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| Main Authors | , , , , , , , , |
| Format | Journal Article |
| Language | English |
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American Institute of Physics
21.09.2020
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| Abstract | The ferroelectricity of (Al1−xScx)N (x = 0–0.34) thin films with various thicknesses was investigated. (Al1−xScx)N films were prepared at 400 °C on (111)Pt/TiOx/SiO2/(001)Si substrates by the radio frequency dual-source reactive magnetron sputtering method using Al and Sc targets under pure N2 gas or a mixture of N2 and Ar gases. The film deposited under N2 gas showed larger remanent polarization than those under N2 + Ar mixture. Ferroelectricity was observed for films with x = 0.10–0.34 for about 140-nm-thick films deposited under N2 gas. The x = 0.22 films showed ferroelectricity down to 48 nm in thickness from the polarization–electric field curves and the positive-up-negative-down measurement. The ferroelectricity of the 9 nm-thick film also was ascertained from scanning nonlinear dielectric microscopy measurement. These results reveal that ferroelectric polarization can switch for films with much broader compositions and thicknesses than those in the previous study. |
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| AbstractList | The ferroelectricity of (Al1−xScx)N (x = 0–0.34) thin films with various thicknesses was investigated. (Al1−xScx)N films were prepared at 400 °C on (111)Pt/TiOx/SiO2/(001)Si substrates by the radio frequency dual-source reactive magnetron sputtering method using Al and Sc targets under pure N2 gas or a mixture of N2 and Ar gases. The film deposited under N2 gas showed larger remanent polarization than those under N2 + Ar mixture. Ferroelectricity was observed for films with x = 0.10–0.34 for about 140-nm-thick films deposited under N2 gas. The x = 0.22 films showed ferroelectricity down to 48 nm in thickness from the polarization–electric field curves and the positive-up-negative-down measurement. The ferroelectricity of the 9 nm-thick film also was ascertained from scanning nonlinear dielectric microscopy measurement. These results reveal that ferroelectric polarization can switch for films with much broader compositions and thicknesses than those in the previous study. |
| Author | Yasuoka, Shinnosuke Tateyama, Akinori Akiyama, Morito Yamada, Hiroshi Shimizu, Takao Uehara, Masato Hiranaga, Yoshiomi Cho, Yasuo Funakubo, Hiroshi |
| Author_xml | – sequence: 1 givenname: Shinnosuke surname: Yasuoka fullname: Yasuoka, Shinnosuke organization: Department of Materials Science and Engineering, Tokyo Institute of Technology – sequence: 2 givenname: Takao surname: Shimizu fullname: Shimizu, Takao organization: 5Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama 226-8502, Japan – sequence: 3 givenname: Akinori surname: Tateyama fullname: Tateyama, Akinori organization: Department of Materials Science and Engineering, Tokyo Institute of Technology – sequence: 4 givenname: Masato surname: Uehara fullname: Uehara, Masato organization: Sensing System Research Center, National Institute of Advanced Industrial Science and Technology (AIST) – sequence: 5 givenname: Hiroshi surname: Yamada fullname: Yamada, Hiroshi organization: Sensing System Research Center, National Institute of Advanced Industrial Science and Technology (AIST) – sequence: 6 givenname: Morito surname: Akiyama fullname: Akiyama, Morito organization: Sensing System Research Center, National Institute of Advanced Industrial Science and Technology (AIST) – sequence: 7 givenname: Yoshiomi surname: Hiranaga fullname: Hiranaga, Yoshiomi organization: Research Institute of Electrical Communication, Tohoku University – sequence: 8 givenname: Yasuo surname: Cho fullname: Cho, Yasuo organization: Research Institute of Electrical Communication, Tohoku University – sequence: 9 givenname: Hiroshi surname: Funakubo fullname: Funakubo, Hiroshi organization: 5Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama 226-8502, Japan |
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| Snippet | The ferroelectricity of (Al1−xScx)N (x = 0–0.34) thin films with various thicknesses was investigated. (Al1−xScx)N films were prepared at 400 °C on... |
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| SubjectTerms | Applied physics Electric fields Ferroelectric materials Ferroelectricity Gases Magnetron sputtering Polarization Silicon dioxide Silicon substrates Thick films Thickness Thin films Titanium oxides |
| Title | Effects of deposition conditions on the ferroelectric properties of (Al1−xScx)N thin films |
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