Organic and hybrid resistive switching materials and devices
The explosive increase in digital communications in the Big Data and internet of Things era spurs the development of universal memory that can run at high speed with high-density and nonvolatile storage capabilities, as well as demonstrating superior mechanical flexibility for wearable applications....
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| Published in | Chemical Society reviews Vol. 48; no. 6; pp. 1531 - 1565 |
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| Main Authors | , , , , |
| Format | Journal Article |
| Language | English |
| Published |
England
Royal Society of Chemistry
18.03.2019
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| Subjects | |
| Online Access | Get full text |
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| Abstract | The explosive increase in digital communications in the Big Data and internet of Things era spurs the development of universal memory that can run at high speed with high-density and nonvolatile storage capabilities, as well as demonstrating superior mechanical flexibility for wearable applications. Among various candidates for the next-generation information storage technology, resistive switching memories distinguish themselves with low power consumption, excellent downscaling potential, easy 3D stacking, and high CMOS compatibility, fulfilling key requirements for high-performance data storage. Employing organic and hybrid switching media in addition allows light weight and flexible integration of molecules with tunable device performance
via
molecular design-cum-synthesis strategy. In this review, we present a timely and comprehensive review of the recent advances in organic and hybrid resistive switching materials and devices, with particular attention on their design principles for electronic property tuning and flexible device performance. The current challenges posed with development of organic and hybrid resistive switching materials and flexible memory devices, together with their future perspectives, are also discussed.
This review presents a timely and comprehensive summary of organic and hybrid materials for nonvolatile resistive switching memory applications in the "More than Moore" era, with particular attention on their designing principles for electronic property tuning and flexible memory performance. |
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| AbstractList | The explosive increase in digital communications in the Big Data and internet of Things era spurs the development of universal memory that can run at high speed with high-density and nonvolatile storage capabilities, as well as demonstrating superior mechanical flexibility for wearable applications. Among various candidates for the next-generation information storage technology, resistive switching memories distinguish themselves with low power consumption, excellent downscaling potential, easy 3D stacking, and high CMOS compatibility, fulfilling key requirements for high-performance data storage. Employing organic and hybrid switching media in addition allows light weight and flexible integration of molecules with tunable device performance
via
molecular design-cum-synthesis strategy. In this review, we present a timely and comprehensive review of the recent advances in organic and hybrid resistive switching materials and devices, with particular attention on their design principles for electronic property tuning and flexible device performance. The current challenges posed with development of organic and hybrid resistive switching materials and flexible memory devices, together with their future perspectives, are also discussed.
This review presents a timely and comprehensive summary of organic and hybrid materials for nonvolatile resistive switching memory applications in the "More than Moore" era, with particular attention on their designing principles for electronic property tuning and flexible memory performance. The explosive increase in digital communications in the Big Data and internet of Things era spurs the development of universal memory that can run at high speed with high-density and nonvolatile storage capabilities, as well as demonstrating superior mechanical flexibility for wearable applications. Among various candidates for the next-generation information storage technology, resistive switching memories distinguish themselves with low power consumption, excellent downscaling potential, easy 3D stacking, and high CMOS compatibility, fulfilling key requirements for high-performance data storage. Employing organic and hybrid switching media in addition allows light weight and flexible integration of molecules with tunable device performance via molecular design-cum-synthesis strategy. In this review, we present a timely and comprehensive review of the recent advances in organic and hybrid resistive switching materials and devices, with particular attention on their design principles for electronic property tuning and flexible device performance. The current challenges posed with development of organic and hybrid resistive switching materials and flexible memory devices, together with their future perspectives, are also discussed. The explosive increase in digital communications in the Big Data and internet of Things era spurs the development of universal memory that can run at high speed with high-density and nonvolatile storage capabilities, as well as demonstrating superior mechanical flexibility for wearable applications. Among various candidates for the next-generation information storage technology, resistive switching memories distinguish themselves with low power consumption, excellent downscaling potential, easy 3D stacking, and high CMOS compatibility, fulfilling key requirements for high-performance data storage. Employing organic and hybrid switching media in addition allows light weight and flexible integration of molecules with tunable device performance via molecular design-cum-synthesis strategy. In this review, we present a timely and comprehensive review of the recent advances in organic and hybrid resistive switching materials and devices, with particular attention on their design principles for electronic property tuning and flexible device performance. The current challenges posed with development of organic and hybrid resistive switching materials and flexible memory devices, together with their future perspectives, are also discussed.The explosive increase in digital communications in the Big Data and internet of Things era spurs the development of universal memory that can run at high speed with high-density and nonvolatile storage capabilities, as well as demonstrating superior mechanical flexibility for wearable applications. Among various candidates for the next-generation information storage technology, resistive switching memories distinguish themselves with low power consumption, excellent downscaling potential, easy 3D stacking, and high CMOS compatibility, fulfilling key requirements for high-performance data storage. Employing organic and hybrid switching media in addition allows light weight and flexible integration of molecules with tunable device performance via molecular design-cum-synthesis strategy. In this review, we present a timely and comprehensive review of the recent advances in organic and hybrid resistive switching materials and devices, with particular attention on their design principles for electronic property tuning and flexible device performance. The current challenges posed with development of organic and hybrid resistive switching materials and flexible memory devices, together with their future perspectives, are also discussed. The explosive increase in digital communications in the Big Data and internet of Things era spurs the development of universal memory that can run at high speed with high-density and nonvolatile storage capabilities, as well as demonstrating superior mechanical flexibility for wearable applications. Among various candidates for the next-generation information storage technology, resistive switching memories distinguish themselves with low power consumption, excellent downscaling potential, easy 3D stacking, and high CMOS compatibility, fulfilling key requirements for high-performance data storage. Employing organic and hybrid switching media in addition allows light weight and flexible integration of molecules with tunable device performance via molecular design-cum-synthesis strategy. In this review, we present a timely and comprehensive review of the recent advances in organic and hybrid resistive switching materials and devices, with particular attention on their design principles for electronic property tuning and flexible device performance. The current challenges posed with development of organic and hybrid resistive switching materials and flexible memory devices, together with their future perspectives, are also discussed. |
| Author | Liu, Gang Gao, Shuang Shang, Jie Yi, Xiaohui Li, Run-Wei |
| AuthorAffiliation | CAS Key Laboratory of Magnetic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology |
| AuthorAffiliation_xml | – sequence: 0 name: CAS Key Laboratory of Magnetic Materials and Devices – sequence: 0 name: Ningbo Institute of Materials Technology and Engineering – sequence: 0 name: Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology – sequence: 0 name: Chinese Academy of Sciences |
| Author_xml | – sequence: 1 givenname: Shuang surname: Gao fullname: Gao, Shuang – sequence: 2 givenname: Xiaohui surname: Yi fullname: Yi, Xiaohui – sequence: 3 givenname: Jie surname: Shang fullname: Shang, Jie – sequence: 4 givenname: Gang surname: Liu fullname: Liu, Gang – sequence: 5 givenname: Run-Wei surname: Li fullname: Li, Run-Wei |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/30398508$$D View this record in MEDLINE/PubMed |
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| Notes | Shuang Gao is currently an Assistant Professor at the Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS). He received the BS degree from University of Science and Technology Beijing (USTB) in 2011 and then the PhD degree from Tsinghua University in 2016. His current research interests are mainly memristive materials and devices for wearable electronics and novel logic-in-memory as well as neuromorphic computing applications. Gang Liu is currently a full professor at the Ningbo Institute of Materials Technology and Engineering (NIMTE), CAS. After receiving his PhD degree from the National University of Singapore in 2010, he worked as a research associate at the Nanyang Technological University and then as a research fellow at the National University of Singapore from January 2010 to August 2012. In August 2012, he joined the CAS Key Laboratory of Magnetic Materials and Devices of NIMTE. His research interests include the design, preparation and engineering of polymer-based nanocomposite materials, as well as their applications in electronics and optoelectronics. Xiaohui Yi is currently an Associate Professor at the Ningbo Institute of Materials Technology and Engineering (NIMTE), CAS. He obtained his PhD degree from L'Institut National des Sciences Appliquées de Rennes, France at 2014. He then joined Prof. Run-Wei Li's group at the CAS Key Laboratory of Magnetic Materials and Devices of NIMTE as a postdoctoral researcher. His current research interests are focused on the electric, luminescent and magnetic properties on the basis of ligand-metal complex and their application for flexible memory. Run-Wei Li is currently a full professor at the Ningbo Institute of Materials Technology and Engineering (NIMTE), the Chinese Academy of Sciences (CAS) and the director of CAS Key Laboratory of Magnetic Materials and Devices. After receiving his PhD degree from the Institute of Physics, CAS in July 2002, he worked as a JSPS research fellow at the Osaka University. In September 2003, he moved to the Kaiserslautern University as an Alexander von Humboldt research fellow. Since March 2008, he has been "One Hundred Talents" professor of CAS. His research work is mainly focused on the functional materials and devices for new types of storage and sensors. Jie Shang is currently a Professor at Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS). After receiving the PhD degree from Kunming University of Science and Technology in 2010, he joined the CAS Key Laboratory of Magnetic Materials and Devices of NIMTE. His research work is focused on the design, preparation and engineering of flexible and elastic functional materials, as well as their applications in wearable devices. ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 ObjectType-Review-3 content type line 23 |
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| Title | Organic and hybrid resistive switching materials and devices |
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