Temperature effect on bonding structures of amorphous carbon containing more than 30at.% silicon

• Published in: Diamond and related materials Vol. 16; no. 10; pp. 1823 - 1827
• Main Authors: Ong, Soon-Eng, Zhang, Sam, Du, Hejun, Tan, Gladys
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.10.2007; Elsevier
• Subjects: Amorphous carbon; Bonding configurations; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Fullerenes and related materials; diamonds, graphite; Hardness; Materials science; Mechanical and acoustical properties; Methods of deposition of films and coatings; film growth and epitaxy; Physical properties of thin films, nonelectronic; Physics; Specific materials; Sputtering; Surface and interface electron states; Surface states, band structure, electron density of states; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Amorphous carbon; Hardness; Sputtering; Bonding configurations; Annealing; Amorphous thin film; Mechanical properties; Raman spectroscopy; Deposition process; Thin films; Cathode sputtering; Electronic structure; Temperature effects; Ambient temperature; Physical vapor deposition; Chemical bonds; Silicon; Sputter deposition; Atomic structure; X-ray photoelectron spectra

Bonding evolution of amorphous carbon incorporated with Si or a-C(Si) in a thermal process has not been studied. Unhydrogenated a-C(Si) films were deposited by magnetron sputtering to undergo two different thermal processes: i) sputter deposition at substrate temperatures from 100 to 500 °C; ii) roo...