Temperature effect on bonding structures of amorphous carbon containing more than 30at.% silicon

Bonding evolution of amorphous carbon incorporated with Si or a-C(Si) in a thermal process has not been studied. Unhydrogenated a-C(Si) films were deposited by magnetron sputtering to undergo two different thermal processes: i) sputter deposition at substrate temperatures from 100 to 500 °C; ii) roo...

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Published inDiamond and related materials Vol. 16; no. 10; pp. 1823 - 1827
Main Authors Ong, Soon-Eng, Zhang, Sam, Du, Hejun, Tan, Gladys
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.10.2007
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Abstract Bonding evolution of amorphous carbon incorporated with Si or a-C(Si) in a thermal process has not been studied. Unhydrogenated a-C(Si) films were deposited by magnetron sputtering to undergo two different thermal processes: i) sputter deposition at substrate temperatures from 100 to 500 °C; ii) room temperature deposition followed by annealing at 200 to 1000 °C. The hardness of the films deposited at high temperature exhibits a monotonic decrease whereas the films deposited at room temperature maintained their hardness until 600 °C. X-ray photoelectron spectroscopy and Raman spectroscopy were used to analyze the composition and bonding structures. It was established that the change in the mechanical property is closely related to the atomic bonding structures, their relative fractions and the evolution (conversion from C–C sp 3 → C C sp 2 or C C sp 2 → C–Si sp 3) as well as clustering of sp 2 structures.
AbstractList Bonding evolution of amorphous carbon incorporated with Si or a-C(Si) in a thermal process has not been studied. Unhydrogenated a-C(Si) films were deposited by magnetron sputtering to undergo two different thermal processes: i) sputter deposition at substrate temperatures from 100 to 500 deg C; ii) room temperature deposition followed by annealing at 200 to 1000 deg C. The hardness of the films deposited at high temperature exhibits a monotonic decrease whereas the films deposited at room temperature maintained their hardness until 600 deg C. X-ray photoelectron spectroscopy and Raman spectroscopy were used to analyze the composition and bonding structures. It was established that the change in the mechanical property is closely related to the atomic bonding structures, their relative fractions and the evolution (conversion from C-C sp3- > CC sp2 or CC sp2- > C-Si sp3) as well as clustering of sp2 structures.
Bonding evolution of amorphous carbon incorporated with Si or a-C(Si) in a thermal process has not been studied. Unhydrogenated a-C(Si) films were deposited by magnetron sputtering to undergo two different thermal processes: i) sputter deposition at substrate temperatures from 100 to 500 °C; ii) room temperature deposition followed by annealing at 200 to 1000 °C. The hardness of the films deposited at high temperature exhibits a monotonic decrease whereas the films deposited at room temperature maintained their hardness until 600 °C. X-ray photoelectron spectroscopy and Raman spectroscopy were used to analyze the composition and bonding structures. It was established that the change in the mechanical property is closely related to the atomic bonding structures, their relative fractions and the evolution (conversion from C–C sp 3 → C C sp 2 or C C sp 2 → C–Si sp 3) as well as clustering of sp 2 structures.
Author Ong, Soon-Eng
Zhang, Sam
Du, Hejun
Tan, Gladys
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Issue 10
Keywords Amorphous carbon
Hardness
Sputtering
Bonding configurations
Annealing
Amorphous thin film
Mechanical properties
Raman spectroscopy
Deposition process
Thin films
Cathode sputtering
Electronic structure
Temperature effects
Ambient temperature
Physical vapor deposition
Chemical bonds
Silicon
Sputter deposition
Atomic structure
X-ray photoelectron spectra
Language English
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Snippet Bonding evolution of amorphous carbon incorporated with Si or a-C(Si) in a thermal process has not been studied. Unhydrogenated a-C(Si) films were deposited by...
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SubjectTerms Amorphous carbon
Bonding configurations
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Deposition by sputtering
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Fullerenes and related materials; diamonds, graphite
Hardness
Materials science
Mechanical and acoustical properties
Methods of deposition of films and coatings; film growth and epitaxy
Physical properties of thin films, nonelectronic
Physics
Specific materials
Sputtering
Surface and interface electron states
Surface states, band structure, electron density of states
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Title Temperature effect on bonding structures of amorphous carbon containing more than 30at.% silicon
URI https://dx.doi.org/10.1016/j.diamond.2007.07.004
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