On the determination of the emitter saturation current density from lifetime measurements of silicon devices

ABSTRACT Contactless photoconductance measurements are commonly used to extract the emitter saturation current density (Joe) for crystalline silicon samples containing an emitter on the surface. We review the physics behind the analysis of Joe and compare the commonly used approximations with more g...

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Published in	Progress in photovoltaics Vol. 21; no. 5; pp. 850 - 866
Main Authors	Mäckel, Helmut, Varner, Kenneth
Format	Journal Article
Language	English
Published	Bognor Regis Blackwell Publishing Ltd 01.08.2013 Wiley Wiley Subscription Services, Inc
Subjects	Applied sciences Approximation Current density Density Emittance emitter recombination current Energy Exact sciences and technology minority carrier lifetime Minority carriers Natural energy photoconductance measurement Photovoltaic conversion Saturation Silicon Simulation solar cell Solar cells. Photoelectrochemical cells Solar energy Minority carrier emitter recombination current Charge carrier density Doping Transmitter Durability photoconductance measurement Two dimensional model Review Solar cell Crystalline material Carrier lifetime Analytical method Visible radiation Dark current Surface properties Illumination Silicon Current density Analytical solution minority carrier lifetime Non contact measurement
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Abstract	ABSTRACT Contactless photoconductance measurements are commonly used to extract the emitter saturation current density (Joe) for crystalline silicon samples containing an emitter on the surface. We review the physics behind the analysis of Joe and compare the commonly used approximations with more generalised solutions using two‐dimensional device simulations. We quantify errors present in such approximations for different test conditions involving varying illumination conditions and surface properties in samples with the same emitter on both sides. The simulated Joe obtained from the dark hole current from the emitter into the bulk is nearly the same as the simulated Joe determined by photoconductance measurements of the rear diffusion. The simulated Joe at the front emitter is equivalent to that at the rear emitter only when the sample is subject to a nearly constant and flat generation profile. For illumination conditions including visible light, the simulated Joe at the front emitter is smaller than the simulated Joe at the rear emitter. Both Joe at the rear emitter and from the dark hole current in the emitter remain nearly constant over a wide range of base doping densities. The approximations used for the determination of Joe from photoconductance measurements make Joe dependent on the excess minority carrier density. Lifetime measurements demonstrate that, even in high‐quality silicon, Joe should be determined from the analytical solution as a function of excess minority carrier density including Shockley‐Read‐Hall recombination. Copyright © 2012 John Wiley & Sons, Ltd. We review the physics behind the analysis of the emitter saturation current density (Joe) and compare the commonly used approximations with more generalised solutions using two‐dimensional device simulations. We show that the approximations used for the determination of Joe from photoconductance measurements make Joe dependent on the excess minority carrier density. Lifetime measurements demonstrate that, even in high‐quality silicon, Joe should be determined from the analytical solution as a function of excess minority carrier density including Shockley‐Read‐Hall recombination.
AbstractList	Contactless photoconductance measurements are commonly used to extract the emitter saturation current density (Joe) for crystalline silicon samples containing an emitter on the surface. We review the physics behind the analysis of Joe and compare the commonly used approximations with more generalised solutions using two-dimensional device simulations. We quantify errors present in such approximations for different test conditions involving varying illumination conditions and surface properties in samples with the same emitter on both sides. The simulated Joe obtained from the dark hole current from the emitter into the bulk is nearly the same as the simulated Joe determined by photoconductance measurements of the rear diffusion. The simulated Joe at the front emitter is equivalent to that at the rear emitter only when the sample is subject to a nearly constant and flat generation profile. For illumination conditions including visible light, the simulated Joe at the front emitter is smaller than the simulated Joe at the rear emitter. Both Joe at the rear emitter and from the dark hole current in the emitter remain nearly constant over a wide range of base doping densities. The approximations used for the determination of Joe from photoconductance measurements make Joe dependent on the excess minority carrier density. Lifetime measurements demonstrate that, even in high-quality silicon, Joe should be determined from the analytical solution as a function of excess minority carrier density including Shockley-Read-Hall recombination. Copyright © 2012 John Wiley & Sons, Ltd [PUBLICATION ABSTRACT]. Contactless photoconductance measurements are commonly used to extract the emitter saturation current density ( J oe ) for crystalline silicon samples containing an emitter on the surface. We review the physics behind the analysis of J oe and compare the commonly used approximations with more generalised solutions using two‐dimensional device simulations. We quantify errors present in such approximations for different test conditions involving varying illumination conditions and surface properties in samples with the same emitter on both sides. The simulated J oe obtained from the dark hole current from the emitter into the bulk is nearly the same as the simulated J oe determined by photoconductance measurements of the rear diffusion. The simulated J oe at the front emitter is equivalent to that at the rear emitter only when the sample is subject to a nearly constant and flat generation profile. For illumination conditions including visible light, the simulated J oe at the front emitter is smaller than the simulated J oe at the rear emitter. Both J oe at the rear emitter and from the dark hole current in the emitter remain nearly constant over a wide range of base doping densities. The approximations used for the determination of J oe from photoconductance measurements make J oe dependent on the excess minority carrier density. Lifetime measurements demonstrate that, even in high‐quality silicon, J oe should be determined from the analytical solution as a function of excess minority carrier density including Shockley‐Read‐Hall recombination. Copyright © 2012 John Wiley & Sons, Ltd. Contactless photoconductance measurements are commonly used to extract the emitter saturation current density (J sub(oe)) for crystalline silicon samples containing an emitter on the surface. We review the physics behind the analysis of J sub(oe) and compare the commonly used approximations with more generalised solutions using two-dimensional device simulations. We quantify errors present in such approximations for different test conditions involving varying illumination conditions and surface properties in samples with the same emitter on both sides. The simulated J sub(oe) obtained from the dark hole current from the emitter into the bulk is nearly the same as the simulated J sub(oe) determined by photoconductance measurements of the rear diffusion. The simulated J sub(oe) at the front emitter is equivalent to that at the rear emitter only when the sample is subject to a nearly constant and flat generation profile. For illumination conditions including visible light, the simulated J sub(oe) at the front emitter is smaller than the simulated J sub(oe) at the rear emitter. Both J sub(oe) at the rear emitter and from the dark hole current in the emitter remain nearly constant over a wide range of base doping densities. The approximations used for the determination of J sub(oe) from photoconductance measurements make J sub(oe) dependent on the excess minority carrier density. Lifetime measurements demonstrate that, even in high-quality silicon, J sub(oe) should be determined from the analytical solution as a function of excess minority carrier density including Shockley-Read-Hall recombination. Copyright [copy 2012 John Wiley & Sons, Ltd. We review the physics behind the analysis of the emitter saturation current density (J sub(oe)) and compare the commonly used approximations with more generalised solutions using two-dimensional device simulations. We show that the approximations used for the determination of J sub(oe) from photoconductance measurements make J sub(oe) dependent on the excess minority carrier density. Lifetime measurements demonstrate that, even in high-quality silicon, J sub(oe) should be determined from the analytical solution as a function of excess minority carrier density including Shockley-Read-Hall recombination. ABSTRACT Contactless photoconductance measurements are commonly used to extract the emitter saturation current density (Joe) for crystalline silicon samples containing an emitter on the surface. We review the physics behind the analysis of Joe and compare the commonly used approximations with more generalised solutions using two‐dimensional device simulations. We quantify errors present in such approximations for different test conditions involving varying illumination conditions and surface properties in samples with the same emitter on both sides. The simulated Joe obtained from the dark hole current from the emitter into the bulk is nearly the same as the simulated Joe determined by photoconductance measurements of the rear diffusion. The simulated Joe at the front emitter is equivalent to that at the rear emitter only when the sample is subject to a nearly constant and flat generation profile. For illumination conditions including visible light, the simulated Joe at the front emitter is smaller than the simulated Joe at the rear emitter. Both Joe at the rear emitter and from the dark hole current in the emitter remain nearly constant over a wide range of base doping densities. The approximations used for the determination of Joe from photoconductance measurements make Joe dependent on the excess minority carrier density. Lifetime measurements demonstrate that, even in high‐quality silicon, Joe should be determined from the analytical solution as a function of excess minority carrier density including Shockley‐Read‐Hall recombination. Copyright © 2012 John Wiley & Sons, Ltd. We review the physics behind the analysis of the emitter saturation current density (Joe) and compare the commonly used approximations with more generalised solutions using two‐dimensional device simulations. We show that the approximations used for the determination of Joe from photoconductance measurements make Joe dependent on the excess minority carrier density. Lifetime measurements demonstrate that, even in high‐quality silicon, Joe should be determined from the analytical solution as a function of excess minority carrier density including Shockley‐Read‐Hall recombination.
Author	Mäckel, Helmut Varner, Kenneth
Author_xml	– sequence: 1 givenname: Helmut surname: Mäckel fullname: Mäckel, Helmut email: Correspondence: Helmut Mäckel, Centrotherm Cell & Module GmbH, Reichenaustr. 21, 78467 Konstanz, Germany., helmut.maeckel@centrotherm.de organization: Centrotherm Cell & Module GmbH, Reichenaustr. 21, 78467, Konstanz, Germany – sequence: 2 givenname: Kenneth surname: Varner fullname: Varner, Kenneth organization: Centrotherm Cell & Module GmbH, Reichenaustr. 21, 78467, Konstanz, Germany
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Cites_doi	10.1063/1.1529297 10.1063/1.356634 10.1016/0038-1101(92)90325-7 10.1063/1.371633 10.1016/0038-1098(80)90896-0 10.1109/PVSC.1996.564042 10.1109/WCPEC.1994.520221 10.1063/1.1432476 10.1109/PVSC.2010.5616124 10.1063/1.1610231 10.1016/j.egypro.2011.06.136 10.1016/S0927-0248(98)00179-2 10.1016/0038-1101(76)90022-8 10.1063/1.340013 10.1063/1.90974 10.1103/PhysRevB.53.7836 10.1063/1.1501743 10.1002/pip.714 10.1063/1.345414 10.1063/1.370784 10.1088/0268-1242/17/2/314 10.1063/1.373878 10.1002/(SICI)1099-159X(199703/04)5:2<79::AID-PIP155>3.0.CO;2-J 10.1016/j.solener.2003.07.033 10.1007/s10825-011-0367-6 10.1063/1.363250 10.1063/1.1541115 10.1063/1.368545 10.1016/0031-8914(67)90062-6 10.1109/16.46368 10.1063/1.2784193 10.1063/1.1350633 10.1149/1.2133492 10.1109/16.81632 10.1109/T-ED.1984.21805 10.1016/S0927-0248(00)00082-9 10.1016/S1473-8325(03)00623-0 10.1016/0379-6787(90)90023-X 10.1002/pip.942
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Keywords	Minority carrier emitter recombination current Charge carrier density Doping Transmitter Durability photoconductance measurement Two dimensional model Review Solar cell Crystalline material Carrier lifetime Analytical method Visible radiation Dark current Surface properties Illumination Silicon Current density Analytical solution minority carrier lifetime Non contact measurement
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References	Sentaurus Device. Synopsys Inc.: Mountain View, USA, 2008. Cuevas AS, Sinton RA. Prediction of the open-circuit voltage of solar cells from the steady-state photoconductance. Progress in Photovoltaics: Research and Applications 1997; 5: 79-90. Fair RB, Tsai JCC. A quantitative model for the diffusion of phosphorus in silicon and the emitter dip effect. Journal of the Electrochemical Society 1977; 124: 1107-1118. Bail M, Schulz M, Brendel R. Space-charge region-dominated steady-state photoconductance in low-lifetime Si wafers. Applied Physics Letters 2003; 82: 757-759. Cuevas A, Basore PA, Giroult-Matlakowski G, Dubois C. Surface recombination velocity of highly doped n-type silicon. Journal of Applied Physics 1996; 80: 3370-3375. Lindmayer J, Allison JF. The violet cell: an improved silicon solar cell. Solar Cells 1990; 29: 151-166. del Alamo JA, Swanson RM. The physics and modeling of heavily doped emitters. IEEE Transactions on Electron Devices 1984; 31: 1878-1888. King RR, Swanson RM. Studies of diffused boron emitters: saturation current, bandgap narrowing, and surface recombination velocity. IEEE Transactions on Electron Devices 1991; 38: 1399-1409. Altermatt PP. Models for numerical device simulations of crystalline silicon solar cells-a review. Journal of Computational Electronics 2011; 10: 314-330. Kerr MJ, Cuevas A. General parameterization of Auger recombination in crystalline silicon. Journal of Applied Physics 2002; 91: 2473-2480. Green MA. Intrinsic concentration, effective densities of states, and effective mass in silicon. Journal of Applied Physics 1990; 67: 2944-2954. Fossum JG. Computer-aided numerical analysis of silicon solar cells. Solid State Electronics 1976; 19: 269-277. Solmi S, Parisini A, Angelucci R, Armigliato A, Nobili D, Moro L. Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates. Physical Review B 1996; 53: 7836. Altermatt P. Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing. Journal of Applied Physics 2003; 93: 1598. Huldt L, Nilsson NG, Svantesson KG. The temperature dependence of band-to-band Auger recombination in silicon. Applied Physics Letters 1979; 35: 776-777. Schmidt J, Kerr M, Altermatt PP. Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high-injection densities. Journal of Applied Physics 2000; 88: 1494-1497. Schumacher JO, Altermatt PP, Heiser G, Aberle AG. Application of an improved band-gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters. Solar Energy Materials and Solar Cells 2001; 65: 95-103. Kerr MJ, Cuevas A. Recombination at the interface between silicon and stoichiometric plasma silicon nitride. Semiconductor Science and Technology 2002; 17: 166-172. Bueno G, Recart F, Jimeno JC. A simulation-based method for the comprehensive analysis of effective lifetime from photoconductance. Progress in Photovoltaics: Research and Applications 2007; 15: 123-142. Nagel H, Berge C, Aberle AG. Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors. Journal of Applied Physics 1999; 86: 6218-6221. Klaassen DBM. A unified mobility model for device simulation-I. Model equations and concentration dependence. Solid State Electronics 1992; 35: 953-959. Schenk A. Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation. Journal of Applied Physics 1998; 84: 3684-3695. Altermatt PP, Schumacher JO, Cuevas A, Kerr MJ, Glunz SW, King RR, Heiser G, Schenk A. Numerical modeling of highly doped Si : P emitters based on Fermi-Dirac statistics and self-consistent material parameters. Journal of Applied Physics 2002; 92: 3187-3197. Cuevas A, Macdonald D. Measuring and interpreting the lifetime of silicon wafers. Solar Energy 2004; 76: 255-262. Reichel C, Granek F, Benick J, Schultz-Wittmann O, Glunz SW. Comparison of emitter saturation current densities determined by injection-dependent lifetime spectroscopy in high and low injection regimes. Progress in Photovoltaics: Research and Applications 2011; 20: 21-30. Häcker R, Hangleiter A. Intrinsic upper limits of the carrier lifetime in silicon. Journal of Applied Physics 1994; 75: 7570-7572. Varshni YP. Temperature dependence of the energy gap in semiconductors. Physica 1967; 34: 149-154. King RR, Sinton RA, Swanson RM. Studies of diffused phosphorus emitters: saturation current, surface recombination velocity, and quantum efficiency. IEEE Transactions on Electron Devices 1990; 37: 365-371. Kunst M, Beck G. The study of charge carrier kinetics in semiconductors by microwave conductivity measurements. II. Journal of Applied Physics 1988; 63: 1093-1098. Kerr MJ, Schmidt J, Cuevas A, Bultman JH. Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide. Journal of Applied Physics 2001; 89: 3821-3826. Bock R, Schmidt J, Brendel R. Effective passivation of highly aluminum-doped p-type silicon surfaces using amorphous silicon. Applied Physics Letters 2007; 91: 112112. Trupke T, Green MA, Wurfel P, Altermatt PP, Wang A, Zhao J, Corkish R. Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon. Journal of Applied Physics 2003; 94: 4930-4937. Cuevas A. The effect of emitter recombination on the effective lifetime of silicon wafers. Solar Energy Materials and Solar Cells 1999; 57: 277-290. Glunz SW, Biro D, Rein S, Warta W. Field-effect passivation of the SiO2-Si interface. Journal of Applied Physics 1999; 86: 683-691. Lochmann W, Haug A. Phonon-assisted Auger recombination in Si with direct calculation of the overlap integrals. Solid State Communications 1980; 35: 553-556. 2002; 17 1991; 38 1979; 35 1990; 37 2011 2010 2000; 88 2009 1997 2008 1996 2007; 91 2007 1995 2006 2011; 10 2005 1992; 35 1999; 86 1993 2003 1997; 5 2003; 93 2001; 89 1998; 84 2003; 94 1977; 124 1996; 53 2007; 15 2001; 65 2004; 76 1984; 31 1990; 67 1967; 34 1990; 29 1980; 35 2011; 20 1999; 57 1985 2002; 92 1988; 63 1994; 2402 1996; 80 2002; 91 2003; 82 1976; 19 1994; 75 e_1_2_8_28_1 e_1_2_8_24_1 e_1_2_8_47_1 e_1_2_8_26_1 e_1_2_8_49_1 e_1_2_8_3_1 e_1_2_8_5_1 e_1_2_8_7_1 e_1_2_8_9_1 e_1_2_8_20_1 e_1_2_8_43_1 e_1_2_8_22_1 e_1_2_8_45_1 e_1_2_8_41_1 e_1_2_8_17_1 e_1_2_8_13_1 e_1_2_8_36_1 e_1_2_8_15_1 e_1_2_8_38_1 e_1_2_8_32_1 e_1_2_8_11_1 e_1_2_8_34_1 e_1_2_8_51_1 e_1_2_8_30_1 e_1_2_8_29_1 e_1_2_8_25_1 e_1_2_8_46_1 e_1_2_8_27_1 e_1_2_8_48_1 e_1_2_8_2_1 e_1_2_8_4_1 e_1_2_8_6_1 e_1_2_8_8_1 e_1_2_8_21_1 e_1_2_8_42_1 e_1_2_8_23_1 e_1_2_8_44_1 e_1_2_8_40_1 e_1_2_8_18_1 e_1_2_8_39_1 e_1_2_8_14_1 e_1_2_8_35_1 e_1_2_8_16_1 e_1_2_8_37_1 (e_1_2_8_19_1) 2008 e_1_2_8_10_1 e_1_2_8_31_1 e_1_2_8_12_1 e_1_2_8_33_1 e_1_2_8_52_1 e_1_2_8_50_1
References_xml	– reference: Cuevas A, Basore PA, Giroult-Matlakowski G, Dubois C. Surface recombination velocity of highly doped n-type silicon. Journal of Applied Physics 1996; 80: 3370-3375. – reference: Green MA. Intrinsic concentration, effective densities of states, and effective mass in silicon. Journal of Applied Physics 1990; 67: 2944-2954. – reference: Altermatt PP, Schumacher JO, Cuevas A, Kerr MJ, Glunz SW, King RR, Heiser G, Schenk A. Numerical modeling of highly doped Si : P emitters based on Fermi-Dirac statistics and self-consistent material parameters. Journal of Applied Physics 2002; 92: 3187-3197. – reference: Kerr MJ, Cuevas A. General parameterization of Auger recombination in crystalline silicon. Journal of Applied Physics 2002; 91: 2473-2480. – reference: Huldt L, Nilsson NG, Svantesson KG. The temperature dependence of band-to-band Auger recombination in silicon. Applied Physics Letters 1979; 35: 776-777. – reference: Lochmann W, Haug A. Phonon-assisted Auger recombination in Si with direct calculation of the overlap integrals. Solid State Communications 1980; 35: 553-556. – reference: Bueno G, Recart F, Jimeno JC. A simulation-based method for the comprehensive analysis of effective lifetime from photoconductance. Progress in Photovoltaics: Research and Applications 2007; 15: 123-142. – reference: King RR, Sinton RA, Swanson RM. Studies of diffused phosphorus emitters: saturation current, surface recombination velocity, and quantum efficiency. IEEE Transactions on Electron Devices 1990; 37: 365-371. – reference: Altermatt PP. Models for numerical device simulations of crystalline silicon solar cells-a review. Journal of Computational Electronics 2011; 10: 314-330. – reference: Cuevas A, Macdonald D. Measuring and interpreting the lifetime of silicon wafers. Solar Energy 2004; 76: 255-262. – reference: Bail M, Schulz M, Brendel R. Space-charge region-dominated steady-state photoconductance in low-lifetime Si wafers. Applied Physics Letters 2003; 82: 757-759. – reference: Schenk A. Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation. Journal of Applied Physics 1998; 84: 3684-3695. – reference: Fair RB, Tsai JCC. A quantitative model for the diffusion of phosphorus in silicon and the emitter dip effect. Journal of the Electrochemical Society 1977; 124: 1107-1118. – reference: Lindmayer J, Allison JF. The violet cell: an improved silicon solar cell. Solar Cells 1990; 29: 151-166. – reference: King RR, Swanson RM. Studies of diffused boron emitters: saturation current, bandgap narrowing, and surface recombination velocity. IEEE Transactions on Electron Devices 1991; 38: 1399-1409. – reference: Glunz SW, Biro D, Rein S, Warta W. Field-effect passivation of the SiO2-Si interface. Journal of Applied Physics 1999; 86: 683-691. – reference: Cuevas AS, Sinton RA. Prediction of the open-circuit voltage of solar cells from the steady-state photoconductance. Progress in Photovoltaics: Research and Applications 1997; 5: 79-90. – reference: Bock R, Schmidt J, Brendel R. Effective passivation of highly aluminum-doped p-type silicon surfaces using amorphous silicon. Applied Physics Letters 2007; 91: 112112. – reference: Cuevas A. The effect of emitter recombination on the effective lifetime of silicon wafers. Solar Energy Materials and Solar Cells 1999; 57: 277-290. – reference: Schmidt J, Kerr M, Altermatt PP. Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high-injection densities. Journal of Applied Physics 2000; 88: 1494-1497. – reference: Sentaurus Device. Synopsys Inc.: Mountain View, USA, 2008. – reference: Altermatt P. Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing. Journal of Applied Physics 2003; 93: 1598. – reference: Varshni YP. Temperature dependence of the energy gap in semiconductors. Physica 1967; 34: 149-154. – reference: Schumacher JO, Altermatt PP, Heiser G, Aberle AG. Application of an improved band-gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters. Solar Energy Materials and Solar Cells 2001; 65: 95-103. – reference: Trupke T, Green MA, Wurfel P, Altermatt PP, Wang A, Zhao J, Corkish R. Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon. Journal of Applied Physics 2003; 94: 4930-4937. – reference: del Alamo JA, Swanson RM. The physics and modeling of heavily doped emitters. IEEE Transactions on Electron Devices 1984; 31: 1878-1888. – reference: Nagel H, Berge C, Aberle AG. Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors. Journal of Applied Physics 1999; 86: 6218-6221. – reference: Klaassen DBM. A unified mobility model for device simulation-I. Model equations and concentration dependence. Solid State Electronics 1992; 35: 953-959. – reference: Häcker R, Hangleiter A. Intrinsic upper limits of the carrier lifetime in silicon. Journal of Applied Physics 1994; 75: 7570-7572. – reference: Kunst M, Beck G. The study of charge carrier kinetics in semiconductors by microwave conductivity measurements. II. Journal of Applied Physics 1988; 63: 1093-1098. – reference: Solmi S, Parisini A, Angelucci R, Armigliato A, Nobili D, Moro L. Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates. Physical Review B 1996; 53: 7836. – reference: Reichel C, Granek F, Benick J, Schultz-Wittmann O, Glunz SW. Comparison of emitter saturation current densities determined by injection-dependent lifetime spectroscopy in high and low injection regimes. Progress in Photovoltaics: Research and Applications 2011; 20: 21-30. – reference: Kerr MJ, Schmidt J, Cuevas A, Bultman JH. Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide. Journal of Applied Physics 2001; 89: 3821-3826. – reference: Fossum JG. Computer-aided numerical analysis of silicon solar cells. Solid State Electronics 1976; 19: 269-277. – reference: Kerr MJ, Cuevas A. Recombination at the interface between silicon and stoichiometric plasma silicon nitride. Semiconductor Science and Technology 2002; 17: 166-172. – year: 2011 – volume: 67 start-page: 2944 year: 1990 end-page: 2954 article-title: Intrinsic concentration, effective densities of states, and effective mass in silicon publication-title: Journal of Applied Physics – volume: 89 start-page: 3821 year: 2001 end-page: 3826 article-title: Surface recombination velocity of phosphorus‐diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide publication-title: Journal of Applied Physics – volume: 34 start-page: 149 year: 1967 end-page: 154 article-title: Temperature dependence of the energy gap in semiconductors publication-title: Physica – volume: 91 start-page: 2473 year: 2002 end-page: 2480 article-title: General parameterization of Auger recombination in crystalline silicon publication-title: Journal of Applied Physics – start-page: 457 year: 1996 end-page: 460 – volume: 53 start-page: 7836 year: 1996 article-title: Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates publication-title: Physical Review B – volume: 92 start-page: 3187 year: 2002 end-page: 3197 article-title: Numerical modeling of highly doped Si : P emitters based on Fermi–Dirac statistics and self‐consistent material parameters publication-title: Journal of Applied Physics – start-page: 578 year: 1985 end-page: 583 – volume: 94 start-page: 4930 year: 2003 end-page: 4937 article-title: Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon publication-title: Journal of Applied Physics – volume: 57 start-page: 277 year: 1999 end-page: 290 article-title: The effect of emitter recombination on the effective lifetime of silicon wafers publication-title: Solar Energy Materials and Solar Cells – start-page: 337 year: 1995 end-page: 342 – volume: 93 start-page: 1598 year: 2003 article-title: Reassessment of the intrinsic carrier density in crystalline silicon in view of band‐gap narrowing publication-title: Journal of Applied Physics – volume: 19 start-page: 269 year: 1976 end-page: 277 article-title: Computer‐aided numerical analysis of silicon solar cells publication-title: Solid State Electronics – volume: 29 start-page: 151 year: 1990 end-page: 166 article-title: The violet cell: an improved silicon solar cell publication-title: Solar Cells – volume: 20 start-page: 21 year: 2011 end-page: 30 article-title: Comparison of emitter saturation current densities determined by injection‐dependent lifetime spectroscopy in high and low injection regimes publication-title: Progress in Photovoltaics: Research and Applications – volume: 35 start-page: 953 year: 1992 end-page: 959 article-title: A unified mobility model for device simulation—I. Model equations and concentration dependence publication-title: Solid State Electronics – start-page: 647 year: 2006 end-page: 650 – year: 2008 – volume: 15 start-page: 123 year: 2007 end-page: 142 article-title: A simulation‐based method for the comprehensive analysis of effective lifetime from photoconductance publication-title: Progress in Photovoltaics: Research and Applications – volume: 17 start-page: 166 year: 2002 end-page: 172 article-title: Recombination at the interface between silicon and stoichiometric plasma silicon nitride publication-title: Semiconductor Science and Technology – volume: 31 start-page: 1878 year: 1984 end-page: 1888 article-title: The physics and modeling of heavily doped emitters publication-title: IEEE Transactions on Electron Devices – volume: 124 start-page: 1107 year: 1977 end-page: 1118 article-title: A quantitative model for the diffusion of phosphorus in silicon and the emitter dip effect publication-title: Journal of the Electrochemical Society – volume: 38 start-page: 1399 year: 1991 end-page: 1409 article-title: Studies of diffused boron emitters: saturation current, bandgap narrowing, and surface recombination velocity publication-title: IEEE Transactions on Electron Devices – volume: 84 start-page: 3684 year: 1998 end-page: 3695 article-title: Finite‐temperature full random‐phase approximation model of band gap narrowing for silicon device simulation publication-title: Journal of Applied Physics – volume: 86 start-page: 6218 year: 1999 end-page: 6221 article-title: Generalized analysis of quasi‐steady‐state and quasi‐transient measurements of carrier lifetimes in semiconductors publication-title: Journal of Applied Physics – volume: 75 start-page: 7570 year: 1994 end-page: 7572 article-title: Intrinsic upper limits of the carrier lifetime in silicon publication-title: Journal of Applied Physics – start-page: 1228 year: 2005 end-page: 1231 – start-page: 91 year: 2003 end-page: 94 – volume: 86 start-page: 683 year: 1999 end-page: 691 article-title: Field‐effect passivation of the SiO ‐Si interface publication-title: Journal of Applied Physics – start-page: 1068 year: 2009 end-page: 1071 – start-page: 147 year: 1993 end-page: 152 – start-page: 1262 year: 2007 end-page: 1265 – volume: 10 start-page: 314 year: 2011 end-page: 330 article-title: Models for numerical device simulations of crystalline silicon solar cells–a review publication-title: Journal of Computational Electronics – year: 2003 – volume: 37 start-page: 365 year: 1990 end-page: 371 article-title: Studies of diffused phosphorus emitters: saturation current, surface recombination velocity, and quantum efficiency publication-title: IEEE Transactions on Electron Devices – volume: 63 start-page: 1093 year: 1988 end-page: 1098 article-title: The study of charge carrier kinetics in semiconductors by microwave conductivity measurements. II publication-title: Journal of Applied Physics – volume: 82 start-page: 757 year: 2003 end-page: 759 article-title: Space‐charge region‐dominated steady‐state photoconductance in low‐lifetime Si wafers publication-title: Applied Physics Letters – year: 2010 – volume: 35 start-page: 776 year: 1979 end-page: 777 article-title: The temperature dependence of band‐to‐band Auger recombination in silicon publication-title: Applied Physics Letters – volume: 91 start-page: 112112 year: 2007 article-title: Effective passivation of highly aluminum‐doped p‐type silicon surfaces using amorphous silicon publication-title: Applied Physics Letters – volume: 5 start-page: 79 year: 1997 end-page: 90 article-title: Prediction of the open‐circuit voltage of solar cells from the steady‐state photoconductance publication-title: Progress in Photovoltaics: Research and Applications – volume: 88 start-page: 1494 year: 2000 end-page: 1497 article-title: Coulomb‐enhanced Auger recombination in crystalline silicon at intermediate and high‐injection densities publication-title: Journal of Applied Physics – volume: 35 start-page: 553 year: 1980 end-page: 556 article-title: Phonon‐assisted Auger recombination in Si with direct calculation of the overlap integrals publication-title: Solid State Communications – volume: 80 start-page: 3370 year: 1996 end-page: 3375 article-title: Surface recombination velocity of highly doped n‐type silicon publication-title: Journal of Applied Physics – volume: 2402 start-page: 1446 year: 1994 end-page: 2409 – start-page: 207 year: 1997 end-page: 210 – volume: 65 start-page: 95 year: 2001 end-page: 103 article-title: Application of an improved band‐gap narrowing model to the numerical simulation of recombination properties of phosphorus‐doped silicon emitters publication-title: Solar Energy Materials and Solar Cells – volume: 76 start-page: 255 year: 2004 end-page: 262 article-title: Measuring and interpreting the lifetime of silicon wafers publication-title: Solar Energy – ident: e_1_2_8_34_1 doi: 10.1063/1.1529297 – ident: e_1_2_8_44_1 doi: 10.1063/1.356634 – ident: e_1_2_8_27_1 doi: 10.1016/0038-1101(92)90325-7 – ident: e_1_2_8_50_1 doi: 10.1063/1.371633 – ident: e_1_2_8_43_1 doi: 10.1016/0038-1098(80)90896-0 – ident: e_1_2_8_3_1 doi: 10.1109/PVSC.1996.564042 – ident: e_1_2_8_11_1 doi: 10.1109/WCPEC.1994.520221 – ident: e_1_2_8_28_1 – ident: e_1_2_8_47_1 doi: 10.1063/1.1432476 – ident: e_1_2_8_30_1 doi: 10.1109/PVSC.2010.5616124 – ident: e_1_2_8_36_1 doi: 10.1063/1.1610231 – ident: e_1_2_8_17_1 doi: 10.1016/j.egypro.2011.06.136 – ident: e_1_2_8_22_1 doi: 10.1016/S0927-0248(98)00179-2 – ident: e_1_2_8_37_1 doi: 10.1016/0038-1101(76)90022-8 – ident: e_1_2_8_4_1 doi: 10.1063/1.340013 – ident: e_1_2_8_42_1 doi: 10.1063/1.90974 – ident: e_1_2_8_51_1 doi: 10.1103/PhysRevB.53.7836 – ident: e_1_2_8_14_1 doi: 10.1063/1.1501743 – volume-title: Sentaurus Device year: 2008 ident: e_1_2_8_19_1 – ident: e_1_2_8_18_1 – ident: e_1_2_8_15_1 – ident: e_1_2_8_12_1 – ident: e_1_2_8_23_1 doi: 10.1002/pip.714 – ident: e_1_2_8_31_1 doi: 10.1063/1.345414 – ident: e_1_2_8_45_1 doi: 10.1063/1.370784 – ident: e_1_2_8_20_1 doi: 10.1088/0268-1242/17/2/314 – ident: e_1_2_8_46_1 doi: 10.1063/1.373878 – ident: e_1_2_8_25_1 doi: 10.1002/(SICI)1099-159X(199703/04)5:2<79::AID-PIP155>3.0.CO;2-J – ident: e_1_2_8_40_1 doi: 10.1016/j.solener.2003.07.033 – ident: e_1_2_8_39_1 – ident: e_1_2_8_32_1 doi: 10.1007/s10825-011-0367-6 – ident: e_1_2_8_13_1 doi: 10.1063/1.363250 – ident: e_1_2_8_8_1 doi: 10.1063/1.1541115 – ident: e_1_2_8_35_1 doi: 10.1063/1.368545 – ident: e_1_2_8_7_1 – ident: e_1_2_8_33_1 doi: 10.1016/0031-8914(67)90062-6 – ident: e_1_2_8_2_1 – ident: e_1_2_8_9_1 doi: 10.1109/16.46368 – ident: e_1_2_8_16_1 – ident: e_1_2_8_6_1 doi: 10.1063/1.2784193 – ident: e_1_2_8_24_1 – ident: e_1_2_8_5_1 doi: 10.1063/1.1350633 – ident: e_1_2_8_48_1 doi: 10.1149/1.2133492 – ident: e_1_2_8_41_1 – ident: e_1_2_8_10_1 doi: 10.1109/16.81632 – ident: e_1_2_8_49_1 – ident: e_1_2_8_29_1 doi: 10.1109/T-ED.1984.21805 – ident: e_1_2_8_26_1 doi: 10.1016/S0927-0248(00)00082-9 – ident: e_1_2_8_38_1 doi: 10.1016/S1473-8325(03)00623-0 – ident: e_1_2_8_52_1 doi: 10.1016/0379-6787(90)90023-X – ident: e_1_2_8_21_1 doi: 10.1002/pip.942
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Snippet	ABSTRACT Contactless photoconductance measurements are commonly used to extract the emitter saturation current density (Joe) for crystalline silicon samples... Contactless photoconductance measurements are commonly used to extract the emitter saturation current density ( J oe ) for crystalline silicon samples... Contactless photoconductance measurements are commonly used to extract the emitter saturation current density (Joe) for crystalline silicon samples containing... Contactless photoconductance measurements are commonly used to extract the emitter saturation current density (J sub(oe)) for crystalline silicon samples...
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SubjectTerms	Applied sciences Approximation Current density Density Emittance emitter recombination current Energy Exact sciences and technology minority carrier lifetime Minority carriers Natural energy photoconductance measurement Photovoltaic conversion Saturation Silicon Simulation solar cell Solar cells. Photoelectrochemical cells Solar energy
Title	On the determination of the emitter saturation current density from lifetime measurements of silicon devices
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