Generalized thermo-elastodynamics for semiconductor material subject to ultrafast laser heating. Part I: Model description and validation

• Published in: International journal of heat and mass transfer Vol. 53; no. 1; pp. 41 - 47
• Main Authors: Qi, Xuele, Suh, C. Steve
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 15.01.2010; Elsevier
• Subjects: Axisymmetric model; Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Generalized thermoelasticity; Physics; Silicon wafer; Staggered finite difference; Thermal expansion; thermomechanical effects and density; Thermal properties of condensed matter; Thermal properties of crystalline solids; Ultrafast laser pulse; Staggered finite difference; Axisymmetric model; Ultrafast laser pulse; Silicon wafer; Generalized thermoelasticity; Near field; Transport equation; Boltzmann equation; Laser-radiation heating; Thermomechanical properties; Relaxation time; Equation system; Free carrier; Lattice dynamics; Temperature effects; Multi-phonon processes; Thermoelasticity; Impact ionization; Silicon; Damage; Carrier density; Finite difference method; Ultrafast process

A generalized thermo-elastodynamic formulation applicable to the investigation of coupled thermomechanical responses of a silicon thin structure excited by ultrafast laser pulses is presented. Hyperbolic energy transport equations with two relaxation times is incorporated along with the relaxation-t...