Generalized thermo-elastodynamics for semiconductor material subject to ultrafast laser heating. Part I: Model description and validation - Qi, Xuele; Suh, C. Steve (International journal of heat and mass transfer, 2010)
Keywords: Axisymmetric model; Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Generalized thermoelasticity; Physics; Silicon wafer; Staggered finite difference; Thermal expansion; thermomechanical effects and density; Thermal properties of condensed matter; Thermal properties of crystalline solids; Ultrafast laser pulse; Staggered finite difference; Axisymmetric model; Ultrafast laser pulse; Silicon wafer; Generalized thermoelasticity; Near field; Transport equation; Boltzmann equation; Laser-radiation heating; Thermomechanical properties; Relaxation time; Equation system; Free carrier; Lattice dynamics; Temperature effects; Multi-phonon processes; Thermoelasticity; Impact ionization; Silicon; Damage; Carrier density; Finite difference method; Ultrafast process