Generalized thermo-elastodynamics for semiconductor material subject to ultrafast laser heating. Part I: Model description and validation

A generalized thermo-elastodynamic formulation applicable to the investigation of coupled thermomechanical responses of a silicon thin structure excited by ultrafast laser pulses is presented. Hyperbolic energy transport equations with two relaxation times is incorporated along with the relaxation-t...

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Published inInternational journal of heat and mass transfer Vol. 53; no. 1; pp. 41 - 47
Main Authors Qi, Xuele, Suh, C. Steve
Format Journal Article
LanguageEnglish
Published Kidlington Elsevier Ltd 15.01.2010
Elsevier
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Abstract A generalized thermo-elastodynamic formulation applicable to the investigation of coupled thermomechanical responses of a silicon thin structure excited by ultrafast laser pulses is presented. Hyperbolic energy transport equations with two relaxation times is incorporated along with the relaxation-time approximation of the Boltzmann equation and a set of balance equations that consider temperature-dependent multi-phonons, free-carrier absorptions, and the recombination and impact ionization processes. A staggered-grid finite difference scheme allows the coupled equations system that govern the transport dynamics in silicon wafer to be solved without having to be concerned with non-physical numerical oscillations. The time evolution of carrier density and the non-thermal melting fluence level at which damages are inflicted in response to a given pulse duration are examined and compared favorably with experimental data. The feasibility of using the model formulation in describing near-field, short time scale thermal–mechanical responses induced by ultrafast laser pulses is thus validated.
AbstractList A generalized thermo-elastodynamic formulation applicable to the investigation of coupled thermomechanical responses of a silicon thin structure excited by ultrafast laser pulses is presented. Hyperbolic energy transport equations with two relaxation times is incorporated along with the relaxation-time approximation of the Boltzmann equation and a set of balance equations that consider temperature-dependent multi-phonons, free-carrier absorptions, and the recombination and impact ionization processes. A staggered-grid finite difference scheme allows the coupled equations system that govern the transport dynamics in silicon wafer to be solved without having to be concerned with non-physical numerical oscillations. The time evolution of carrier density and the non-thermal melting fluence level at which damages are inflicted in response to a given pulse duration are examined and compared favorably with experimental data. The feasibility of using the model formulation in describing near-field, short time scale thermal-mechanical responses induced by ultrafast laser pulses is thus validated.
Author Suh, C. Steve
Qi, Xuele
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Cites_doi 10.1080/01495730802637365
10.1103/PhysRevB.77.245329
10.1080/01495739808956179
10.1103/PhysRevB.35.8166
10.1088/0022-3727/40/21/047
10.1016/j.apsusc.2007.02.093
10.1016/j.ijheatmasstransfer.2004.09.015
10.1115/1.2789101
10.1007/s00339-006-3743-5
10.1063/1.3079512
10.1115/IMECE1997-1225
10.1364/OE.17.003531
10.1109/TDMR.2005.846828
10.1007/BF02428984
10.1063/1.2802304
10.1007/BF00253395
10.1103/PhysRevB.69.035314
10.1016/j.optmat.2006.11.065
10.1006/jcph.1998.5962
10.1007/BF00045689
10.1016/j.apsusc.2007.02.083
10.1117/12.472053
10.1063/1.1447555
10.1080/01495730802637399
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Issue 1
Keywords Staggered finite difference
Axisymmetric model
Ultrafast laser pulse
Silicon wafer
Generalized thermoelasticity
Near field
Transport equation
Boltzmann equation
Laser-radiation heating
Thermomechanical properties
Relaxation time
Equation system
Free carrier
Lattice dynamics
Temperature effects
Multi-phonon processes
Thermoelasticity
Impact ionization
Silicon
Damage
Carrier density
Finite difference method
Ultrafast process
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References Blakemore (bib23) 1962
Suh, Burger (bib27) 1998; 21
Guillermin, Garrelie, Sanner (bib6) 2007; 253
Koudoumas, Kokkinaki, Konstantaki (bib13) 2007; 30
Shinoda, Gattass, Mazur (bib3) 2009; 105
Mauclair, Cheng, Huot, Audouard, Rosenfeld, Hertel, Stoian (bib14) 2009; 17
Matsumura, Nakatani, Yagi (bib15) 2007; 86
Allenspacher, Huttner, Riede (bib31) 2003; 4932
C.S. Suh, G.A. Rabroker, C.E. Burger, R. Chona, Ultrasonic time-frequency characterization of silicon wafers at elevated temperatures, in: Proceedings of the ASME Symposium on Applications of Experimental Mechanics to Electronic Packaging, EEP-Vol. 22/AMD-Vol. 226, 1997, pp. 37–44.
Lomonosov, Hess, Kumon, Hamilton (bib9) 2004; 69
Pecholt, Vendan, Dong, Molian (bib2) 2008; 39
Murdick, Raman, Murooka, Ruan (bib8) 2008; 77
Suh, Burger (bib22) 1998; 65
Qi, Suh (bib19) 2009; 32
Roznowski (bib20) 1989
Chen, Tzou, Beraun (bib17) 2005; 48
Korfiatis1, Thoma, Vardaxoglou (bib7) 2007; 40
van Driel (bib16) 1987; 35
Bhandari, Rowe (bib25) 1988
Green, Lindsay (bib21) 1972; 2
Weinan, Jian-Guo (bib28) 2001; 237
Alimpiev, Grechnikov, Sunner (bib12) 2008; 128
Nagaraj, Suh (bib30) 2005; 5
Rabroker, Suh, Chona (bib11) 2005; 45
Morinishi, Lund, Vasilyev, Moin (bib29) 1998; 143
Rogers, Grigoropoulos, Minor, Mao (bib5) 2009; 94
Nedialkov, Atanasov, Amoruso (bib4) 2007; 253
Qi, Suh (bib18) 2009; 32
Green, Laws (bib26) 1972; 45
Blakemore (bib24) 1962
Gamaly, Rode, Luther-Davies, Tikhonchuk (bib1) 2002; 9
Koudoumas (10.1016/j.ijheatmasstransfer.2009.10.010_bib13) 2007; 30
Weinan (10.1016/j.ijheatmasstransfer.2009.10.010_bib28) 2001; 237
Gamaly (10.1016/j.ijheatmasstransfer.2009.10.010_bib1) 2002; 9
Chen (10.1016/j.ijheatmasstransfer.2009.10.010_bib17) 2005; 48
Blakemore (10.1016/j.ijheatmasstransfer.2009.10.010_bib24) 1962
Guillermin (10.1016/j.ijheatmasstransfer.2009.10.010_bib6) 2007; 253
Korfiatis1 (10.1016/j.ijheatmasstransfer.2009.10.010_bib7) 2007; 40
Qi (10.1016/j.ijheatmasstransfer.2009.10.010_bib18) 2009; 32
Green (10.1016/j.ijheatmasstransfer.2009.10.010_bib21) 1972; 2
Rabroker (10.1016/j.ijheatmasstransfer.2009.10.010_bib11) 2005; 45
Allenspacher (10.1016/j.ijheatmasstransfer.2009.10.010_bib31) 2003; 4932
Roznowski (10.1016/j.ijheatmasstransfer.2009.10.010_bib20) 1989
10.1016/j.ijheatmasstransfer.2009.10.010_bib10
Bhandari (10.1016/j.ijheatmasstransfer.2009.10.010_bib25) 1988
Murdick (10.1016/j.ijheatmasstransfer.2009.10.010_bib8) 2008; 77
Rogers (10.1016/j.ijheatmasstransfer.2009.10.010_bib5) 2009; 94
Suh (10.1016/j.ijheatmasstransfer.2009.10.010_bib22) 1998; 65
Qi (10.1016/j.ijheatmasstransfer.2009.10.010_bib19) 2009; 32
Lomonosov (10.1016/j.ijheatmasstransfer.2009.10.010_bib9) 2004; 69
Alimpiev (10.1016/j.ijheatmasstransfer.2009.10.010_bib12) 2008; 128
Matsumura (10.1016/j.ijheatmasstransfer.2009.10.010_bib15) 2007; 86
Pecholt (10.1016/j.ijheatmasstransfer.2009.10.010_bib2) 2008; 39
van Driel (10.1016/j.ijheatmasstransfer.2009.10.010_bib16) 1987; 35
Nagaraj (10.1016/j.ijheatmasstransfer.2009.10.010_bib30) 2005; 5
Mauclair (10.1016/j.ijheatmasstransfer.2009.10.010_bib14) 2009; 17
Suh (10.1016/j.ijheatmasstransfer.2009.10.010_bib27) 1998; 21
Shinoda (10.1016/j.ijheatmasstransfer.2009.10.010_bib3) 2009; 105
Morinishi (10.1016/j.ijheatmasstransfer.2009.10.010_bib29) 1998; 143
Nedialkov (10.1016/j.ijheatmasstransfer.2009.10.010_bib4) 2007; 253
Green (10.1016/j.ijheatmasstransfer.2009.10.010_bib26) 1972; 45
Blakemore (10.1016/j.ijheatmasstransfer.2009.10.010_bib23) 1962
References_xml – volume: 40
  start-page: 6803
  year: 2007
  end-page: 6808
  ident: bib7
  article-title: Conditions for femtosecond laser melting of silicon
  publication-title: J. Phys. D Appl. Phys.
– volume: 65
  start-page: 605
  year: 1998
  end-page: 613
  ident: bib22
  article-title: Effects of thermomechanical coupling and relaxation times on wave spectrum in dynamic theory of generalized thermoelasticity
  publication-title: J. Appl. Mech.
– volume: 253
  start-page: 8075
  year: 2007
  end-page: 8079
  ident: bib6
  article-title: Single- and multi-pulse formation of surface structures under static femtosecond irradiation
  publication-title: Appl. Surf. Sci.
– volume: 9
  start-page: 949
  year: 2002
  end-page: 957
  ident: bib1
  article-title: Ablation of solids by femtosecond lasers: ablation mechanism and ablation thresholds for metals and dielectrics
  publication-title: Phys. Plasmas
– volume: 128
  start-page: 014711
  year: 2008
  ident: bib12
  article-title: On the role of defects and surface chemistry for surface-assisted laser desorption ionization from silicon
  publication-title: J. Chem. Phys.
– volume: 35
  start-page: 8166
  year: 1987
  end-page: 8176
  ident: bib16
  article-title: Kinetics of high-density plasmas generated in Si by 1.06- and 0.53-μm picoseconds laser pulses
  publication-title: Phys. Rev. B
– reference: C.S. Suh, G.A. Rabroker, C.E. Burger, R. Chona, Ultrasonic time-frequency characterization of silicon wafers at elevated temperatures, in: Proceedings of the ASME Symposium on Applications of Experimental Mechanics to Electronic Packaging, EEP-Vol. 22/AMD-Vol. 226, 1997, pp. 37–44.
– volume: 32
  start-page: 477
  year: 2009
  end-page: 493
  ident: bib18
  article-title: Ultrafast laser-induced elastodynamics in single crystalline silicon. Part I: Model formulation
  publication-title: J. Therm. Stresses
– volume: 45
  start-page: 3
  year: 2005
  end-page: 8
  ident: bib11
  article-title: Laser-induced stress waves thermometry applied to silicon wafer processing: modeling and experimentation
  publication-title: Exp. Mech.
– year: 1962
  ident: bib23
  article-title: Semiconductor Statistics
– volume: 143
  start-page: 90
  year: 1998
  end-page: 124
  ident: bib29
  article-title: Fully conservative higher order finite difference schemes for incompressible flow
  publication-title: J. Comput. Phys.
– volume: 77
  start-page: 245329
  year: 2008
  ident: bib8
  article-title: Photovoltage dynamics of the hydroxylated Si(1
  publication-title: Phys. Rev. B
– volume: 69
  start-page: 035314
  year: 2004
  ident: bib9
  article-title: Laser-generated nonlinear surface wave pulses in silicon crystals
  publication-title: Phys. Rev. B
– year: 1988
  ident: bib25
  article-title: Thermal Conduction in Semiconductors
– volume: 4932
  start-page: 358
  year: 2003
  end-page: 365
  ident: bib31
  article-title: Ultrashort pulse damage of Si and Ge semiconductors
  publication-title: SPIE
– volume: 32
  start-page: 494
  year: 2009
  end-page: 511
  ident: bib19
  article-title: Ultrafast laser-induced elastodynamics in single crystalline silicon. Part II: Near-field response
  publication-title: J. Therm. Stresses
– volume: 17
  start-page: 3531
  year: 2009
  end-page: 3542
  ident: bib14
  article-title: Dynamic ultrafast laser spatial tailoring for parallel micromachining of photonic devices in transparent materials
  publication-title: Opt. Express
– volume: 86
  start-page: 107
  year: 2007
  end-page: 114
  ident: bib15
  article-title: Deep drilling on a silicon plate with a femtosecond laser: experiment and model analysis
  publication-title: Appl. Phys. A
– volume: 30
  start-page: 260
  year: 2007
  end-page: 263
  ident: bib13
  article-title: Nonlinear optical response of silicon nanocrystals
  publication-title: Opt. Mater.
– volume: 2
  start-page: 1
  year: 1972
  end-page: 7
  ident: bib21
  article-title: Thermoelasticity
  publication-title: J. Elasticity
– volume: 237
  start-page: 27
  year: 2001
  end-page: 47
  ident: bib28
  article-title: Projection method III: spatial discretization on the staggered grid
  publication-title: Math. Comput.
– volume: 21
  start-page: 829
  year: 1998
  end-page: 847
  ident: bib27
  article-title: Thermoelastic modeling of laser-induced stress waves in plates
  publication-title: J. Therm. Stresses
– volume: 39
  start-page: 39
  year: 2008
  end-page: 250
  ident: bib2
  article-title: Ultrafast laser micromachining of 3C-SiC thin films for MEMS device fabrication
  publication-title: Int. J. Adv. Manuf. Technol.
– volume: 45
  start-page: 47
  year: 1972
  end-page: 53
  ident: bib26
  article-title: On the entropy production inequality
  publication-title: Arch. Ration. Mech. Anal.
– year: 1989
  ident: bib20
  article-title: Moving Heat Sources in Thermoelasticity
– volume: 94
  start-page: 011111
  year: 2009
  ident: bib5
  article-title: Absence of amorphous phase in high power femtosecond laser-ablated silicon
  publication-title: J. Appl. Phys.
– volume: 253
  start-page: 7761
  year: 2007
  end-page: 7766
  ident: bib4
  article-title: Laser ablation of metals by femtosecond pulses: theoretical and experimental study
  publication-title: Appl. Surf. Sci.
– volume: 5
  start-page: 224
  year: 2005
  end-page: 230
  ident: bib30
  article-title: On short time scale stress wave phenomena and initiation of mechanical faults in flip chip configurations
  publication-title: IEEE Trans. Device Mater. Reliab.
– year: 1962
  ident: bib24
  article-title: International Series of Monographs on Semiconductors
– volume: 105
  start-page: 053102
  year: 2009
  ident: bib3
  article-title: Femtosecond laser-induced formation of nanometer-width grooves on synthetic single-crystal diamond surfaces
  publication-title: J. Appl. Phys.
– volume: 48
  start-page: 501
  year: 2005
  end-page: 509
  ident: bib17
  article-title: Numerical investigation of ultrashort laser damage in semiconductors
  publication-title: Int. J. Heat Mass Transfer
– volume: 32
  start-page: 477
  issue: 5
  year: 2009
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib18
  article-title: Ultrafast laser-induced elastodynamics in single crystalline silicon. Part I: Model formulation
  publication-title: J. Therm. Stresses
  doi: 10.1080/01495730802637365
– year: 1962
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib23
– year: 1962
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib24
– volume: 77
  start-page: 245329
  year: 2008
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib8
  article-title: Photovoltage dynamics of the hydroxylated Si(111) surface investigated by ultrafast electron diffraction
  publication-title: Phys. Rev. B
  doi: 10.1103/PhysRevB.77.245329
– volume: 39
  start-page: 39
  issue: 2
  year: 2008
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib2
  article-title: Ultrafast laser micromachining of 3C-SiC thin films for MEMS device fabrication
  publication-title: Int. J. Adv. Manuf. Technol.
– volume: 21
  start-page: 829
  year: 1998
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib27
  article-title: Thermoelastic modeling of laser-induced stress waves in plates
  publication-title: J. Therm. Stresses
  doi: 10.1080/01495739808956179
– volume: 94
  start-page: 011111
  year: 2009
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib5
  article-title: Absence of amorphous phase in high power femtosecond laser-ablated silicon
  publication-title: J. Appl. Phys.
– volume: 35
  start-page: 8166
  year: 1987
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib16
  article-title: Kinetics of high-density plasmas generated in Si by 1.06- and 0.53-μm picoseconds laser pulses
  publication-title: Phys. Rev. B
  doi: 10.1103/PhysRevB.35.8166
– volume: 40
  start-page: 6803
  year: 2007
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib7
  article-title: Conditions for femtosecond laser melting of silicon
  publication-title: J. Phys. D Appl. Phys.
  doi: 10.1088/0022-3727/40/21/047
– volume: 253
  start-page: 8075
  year: 2007
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib6
  article-title: Single- and multi-pulse formation of surface structures under static femtosecond irradiation
  publication-title: Appl. Surf. Sci.
  doi: 10.1016/j.apsusc.2007.02.093
– year: 1989
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib20
– volume: 48
  start-page: 501
  year: 2005
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib17
  article-title: Numerical investigation of ultrashort laser damage in semiconductors
  publication-title: Int. J. Heat Mass Transfer
  doi: 10.1016/j.ijheatmasstransfer.2004.09.015
– volume: 65
  start-page: 605
  year: 1998
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib22
  article-title: Effects of thermomechanical coupling and relaxation times on wave spectrum in dynamic theory of generalized thermoelasticity
  publication-title: J. Appl. Mech.
  doi: 10.1115/1.2789101
– year: 1988
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib25
– volume: 86
  start-page: 107
  year: 2007
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib15
  article-title: Deep drilling on a silicon plate with a femtosecond laser: experiment and model analysis
  publication-title: Appl. Phys. A
  doi: 10.1007/s00339-006-3743-5
– volume: 105
  start-page: 053102
  year: 2009
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib3
  article-title: Femtosecond laser-induced formation of nanometer-width grooves on synthetic single-crystal diamond surfaces
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.3079512
– ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib10
  doi: 10.1115/IMECE1997-1225
– volume: 17
  start-page: 3531
  issue: 5
  year: 2009
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib14
  article-title: Dynamic ultrafast laser spatial tailoring for parallel micromachining of photonic devices in transparent materials
  publication-title: Opt. Express
  doi: 10.1364/OE.17.003531
– volume: 5
  start-page: 224
  issue: 2
  year: 2005
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib30
  article-title: On short time scale stress wave phenomena and initiation of mechanical faults in flip chip configurations
  publication-title: IEEE Trans. Device Mater. Reliab.
  doi: 10.1109/TDMR.2005.846828
– volume: 45
  start-page: 3
  issue: 1
  year: 2005
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib11
  article-title: Laser-induced stress waves thermometry applied to silicon wafer processing: modeling and experimentation
  publication-title: Exp. Mech.
  doi: 10.1007/BF02428984
– volume: 128
  start-page: 014711
  year: 2008
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib12
  article-title: On the role of defects and surface chemistry for surface-assisted laser desorption ionization from silicon
  publication-title: J. Chem. Phys.
  doi: 10.1063/1.2802304
– volume: 45
  start-page: 47
  year: 1972
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib26
  article-title: On the entropy production inequality
  publication-title: Arch. Ration. Mech. Anal.
  doi: 10.1007/BF00253395
– volume: 69
  start-page: 035314
  year: 2004
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib9
  article-title: Laser-generated nonlinear surface wave pulses in silicon crystals
  publication-title: Phys. Rev. B
  doi: 10.1103/PhysRevB.69.035314
– volume: 30
  start-page: 260
  year: 2007
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib13
  article-title: Nonlinear optical response of silicon nanocrystals
  publication-title: Opt. Mater.
  doi: 10.1016/j.optmat.2006.11.065
– volume: 143
  start-page: 90
  year: 1998
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib29
  article-title: Fully conservative higher order finite difference schemes for incompressible flow
  publication-title: J. Comput. Phys.
  doi: 10.1006/jcph.1998.5962
– volume: 2
  start-page: 1
  year: 1972
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib21
  article-title: Thermoelasticity
  publication-title: J. Elasticity
  doi: 10.1007/BF00045689
– volume: 253
  start-page: 7761
  year: 2007
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib4
  article-title: Laser ablation of metals by femtosecond pulses: theoretical and experimental study
  publication-title: Appl. Surf. Sci.
  doi: 10.1016/j.apsusc.2007.02.083
– volume: 4932
  start-page: 358
  year: 2003
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib31
  article-title: Ultrashort pulse damage of Si and Ge semiconductors
  publication-title: SPIE
  doi: 10.1117/12.472053
– volume: 237
  start-page: 27
  year: 2001
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib28
  article-title: Projection method III: spatial discretization on the staggered grid
  publication-title: Math. Comput.
– volume: 9
  start-page: 949
  issue: 3
  year: 2002
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib1
  article-title: Ablation of solids by femtosecond lasers: ablation mechanism and ablation thresholds for metals and dielectrics
  publication-title: Phys. Plasmas
  doi: 10.1063/1.1447555
– volume: 32
  start-page: 494
  issue: 5
  year: 2009
  ident: 10.1016/j.ijheatmasstransfer.2009.10.010_bib19
  article-title: Ultrafast laser-induced elastodynamics in single crystalline silicon. Part II: Near-field response
  publication-title: J. Therm. Stresses
  doi: 10.1080/01495730802637399
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Snippet A generalized thermo-elastodynamic formulation applicable to the investigation of coupled thermomechanical responses of a silicon thin structure excited by...
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SubjectTerms Axisymmetric model
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Generalized thermoelasticity
Physics
Silicon wafer
Staggered finite difference
Thermal expansion; thermomechanical effects and density
Thermal properties of condensed matter
Thermal properties of crystalline solids
Ultrafast laser pulse
Title Generalized thermo-elastodynamics for semiconductor material subject to ultrafast laser heating. Part I: Model description and validation
URI https://dx.doi.org/10.1016/j.ijheatmasstransfer.2009.10.010
https://www.proquest.com/docview/21261644
https://www.proquest.com/docview/35191378
Volume 53
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