Generalized thermo-elastodynamics for semiconductor material subject to ultrafast laser heating. Part I: Model description and validation
A generalized thermo-elastodynamic formulation applicable to the investigation of coupled thermomechanical responses of a silicon thin structure excited by ultrafast laser pulses is presented. Hyperbolic energy transport equations with two relaxation times is incorporated along with the relaxation-t...
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Published in | International journal of heat and mass transfer Vol. 53; no. 1; pp. 41 - 47 |
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Format | Journal Article |
Language | English |
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15.01.2010
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Abstract | A generalized thermo-elastodynamic formulation applicable to the investigation of coupled thermomechanical responses of a silicon thin structure excited by ultrafast laser pulses is presented. Hyperbolic energy transport equations with two relaxation times is incorporated along with the relaxation-time approximation of the Boltzmann equation and a set of balance equations that consider temperature-dependent multi-phonons, free-carrier absorptions, and the recombination and impact ionization processes. A staggered-grid finite difference scheme allows the coupled equations system that govern the transport dynamics in silicon wafer to be solved without having to be concerned with non-physical numerical oscillations. The time evolution of carrier density and the non-thermal melting fluence level at which damages are inflicted in response to a given pulse duration are examined and compared favorably with experimental data. The feasibility of using the model formulation in describing near-field, short time scale thermal–mechanical responses induced by ultrafast laser pulses is thus validated. |
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AbstractList | A generalized thermo-elastodynamic formulation applicable to the investigation of coupled thermomechanical responses of a silicon thin structure excited by ultrafast laser pulses is presented. Hyperbolic energy transport equations with two relaxation times is incorporated along with the relaxation-time approximation of the Boltzmann equation and a set of balance equations that consider temperature-dependent multi-phonons, free-carrier absorptions, and the recombination and impact ionization processes. A staggered-grid finite difference scheme allows the coupled equations system that govern the transport dynamics in silicon wafer to be solved without having to be concerned with non-physical numerical oscillations. The time evolution of carrier density and the non-thermal melting fluence level at which damages are inflicted in response to a given pulse duration are examined and compared favorably with experimental data. The feasibility of using the model formulation in describing near-field, short time scale thermal-mechanical responses induced by ultrafast laser pulses is thus validated. |
Author | Suh, C. Steve Qi, Xuele |
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Keywords | Staggered finite difference Axisymmetric model Ultrafast laser pulse Silicon wafer Generalized thermoelasticity Near field Transport equation Boltzmann equation Laser-radiation heating Thermomechanical properties Relaxation time Equation system Free carrier Lattice dynamics Temperature effects Multi-phonon processes Thermoelasticity Impact ionization Silicon Damage Carrier density Finite difference method Ultrafast process |
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SubjectTerms | Axisymmetric model Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Generalized thermoelasticity Physics Silicon wafer Staggered finite difference Thermal expansion; thermomechanical effects and density Thermal properties of condensed matter Thermal properties of crystalline solids Ultrafast laser pulse |
Title | Generalized thermo-elastodynamics for semiconductor material subject to ultrafast laser heating. Part I: Model description and validation |
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