Boron-doped hydrogenated silicon carbide alloys containing silicon nanocrystallites for highly efficient nanocrystalline silicon thin-film solar cells
Boron‐doped hydrogenated silicon carbide alloys containing silicon nanocrystallites (p‐nc‐SiC:H) were prepared using a plasma‐enhanced chemical vapor deposition system with a mixture of CH4, SiH4, B2H6 and H2 gases. The influence of hydrogen dilution on the material properties of the p‐nc‐SiC:H film...
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Published in | Progress in photovoltaics Vol. 23; no. 12; pp. 1715 - 1723 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
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Bognor Regis
Blackwell Publishing Ltd
01.12.2015
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Abstract | Boron‐doped hydrogenated silicon carbide alloys containing silicon nanocrystallites (p‐nc‐SiC:H) were prepared using a plasma‐enhanced chemical vapor deposition system with a mixture of CH4, SiH4, B2H6 and H2 gases. The influence of hydrogen dilution on the material properties of the p‐nc‐SiC:H films was investigated, and their roles as window layers in hydrogenated nanocrystalline silicon (nc‐Si:H) solar cells were examined. By increasing the RH (H2/SiH4) ratio from 90 to 220, the Si―C bond density in the p‐nc‐SiC:H films increased from 5.20 × 1019 to 7.07 × 1019/cm3, resulting in a significant increase of the bandgap from 2.09 to 2.23 eV in comparison with the bandgap of 1.95 eV for p‐nc‐Si:H films. For the films deposited at a high RH ratio, the Si nanocrystallites with a size of 3–15 nm were formed in the amorphous SiC:H matrix. The Si nanocrystallites played an important role in the enhancement of vertical charge transport in the p‐nc‐SiC:H films, which was verified by conductive atomic force microscopy measurements. When the p‐nc‐SiC:H films deposited at RH = 220 were applied in the nc‐Si:H solar cells, a high conversion efficiency of 8.26% (Voc = 0.53 V, Jsc = 23.98 mA/cm2 and FF = 0.65) was obtained compared to 6.36% (Voc = 0.44 V, Jsc = 21.90 mA/cm2 and FF = 0.66) of the solar cells with reference p‐nc‐Si:H films. Further enhancement in the cell performance was achieved using p‐nc‐SiC:H bilayers consisting of highly doped upper layers and low‐level doped bottom layers, which led to the increased conversion efficiency of 9.03%. Copyright © 2015 John Wiley & Sons, Ltd.
Wide bandgap (E04 = 2.23 eV) p‐nc‐SiC:H window layers with enhanced vertical charge transport were successfully prepared using plasma‐enhanced chemical vapor deposition under a high hydrogen dilution condition, which led to the formation of Si nanocrystallites in the amorphous SiC:H matrix. When applied to n‐i‐p nc‐Si:H solar cells, these films significantly enhanced cell performance due to low recombination at the p/i interfaces, decrease of the series resistance and low absorption loss at the short wavelengths. |
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AbstractList | Abstract
Boron‐doped hydrogenated silicon carbide alloys containing silicon nanocrystallites (p‐nc‐SiC:H) were prepared using a plasma‐enhanced chemical vapor deposition system with a mixture of CH
4
, SiH
4
, B
2
H
6
and H
2
gases. The influence of hydrogen dilution on the material properties of the p‐nc‐SiC:H films was investigated, and their roles as window layers in hydrogenated nanocrystalline silicon (nc‐Si:H) solar cells were examined. By increasing the R
H
(H
2
/SiH
4
) ratio from 90 to 220, the Si―C bond density in the p‐nc‐SiC:H films increased from 5.20 × 10
19
to 7.07 × 10
19
/cm
3
, resulting in a significant increase of the bandgap from 2.09 to 2.23 eV in comparison with the bandgap of 1.95 eV for p‐nc‐Si:H films. For the films deposited at a high R
H
ratio, the Si nanocrystallites with a size of 3–15 nm were formed in the amorphous SiC:H matrix. The Si nanocrystallites played an important role in the enhancement of vertical charge transport in the p‐nc‐SiC:H films, which was verified by conductive atomic force microscopy measurements. When the p‐nc‐SiC:H films deposited at R
H
= 220 were applied in the nc‐Si:H solar cells, a high conversion efficiency of 8.26% (V
oc
= 0.53 V, J
sc
= 23.98 mA/cm
2
and FF = 0.65) was obtained compared to 6.36% (V
oc
= 0.44 V, J
sc
= 21.90 mA/cm
2
and FF = 0.66) of the solar cells with reference p‐nc‐Si:H films. Further enhancement in the cell performance was achieved using p‐nc‐SiC:H bilayers consisting of highly doped upper layers and low‐level doped bottom layers, which led to the increased conversion efficiency of 9.03%. Copyright © 2015 John Wiley & Sons, Ltd. Boron‐doped hydrogenated silicon carbide alloys containing silicon nanocrystallites (p‐nc‐SiC:H) were prepared using a plasma‐enhanced chemical vapor deposition system with a mixture of CH4, SiH4, B2H6 and H2 gases. The influence of hydrogen dilution on the material properties of the p‐nc‐SiC:H films was investigated, and their roles as window layers in hydrogenated nanocrystalline silicon (nc‐Si:H) solar cells were examined. By increasing the RH (H2/SiH4) ratio from 90 to 220, the Si―C bond density in the p‐nc‐SiC:H films increased from 5.20 × 1019 to 7.07 × 1019/cm3, resulting in a significant increase of the bandgap from 2.09 to 2.23 eV in comparison with the bandgap of 1.95 eV for p‐nc‐Si:H films. For the films deposited at a high RH ratio, the Si nanocrystallites with a size of 3–15 nm were formed in the amorphous SiC:H matrix. The Si nanocrystallites played an important role in the enhancement of vertical charge transport in the p‐nc‐SiC:H films, which was verified by conductive atomic force microscopy measurements. When the p‐nc‐SiC:H films deposited at RH = 220 were applied in the nc‐Si:H solar cells, a high conversion efficiency of 8.26% (Voc = 0.53 V, Jsc = 23.98 mA/cm2 and FF = 0.65) was obtained compared to 6.36% (Voc = 0.44 V, Jsc = 21.90 mA/cm2 and FF = 0.66) of the solar cells with reference p‐nc‐Si:H films. Further enhancement in the cell performance was achieved using p‐nc‐SiC:H bilayers consisting of highly doped upper layers and low‐level doped bottom layers, which led to the increased conversion efficiency of 9.03%. Copyright © 2015 John Wiley & Sons, Ltd. Wide bandgap (E04 = 2.23 eV) p‐nc‐SiC:H window layers with enhanced vertical charge transport were successfully prepared using plasma‐enhanced chemical vapor deposition under a high hydrogen dilution condition, which led to the formation of Si nanocrystallites in the amorphous SiC:H matrix. When applied to n‐i‐p nc‐Si:H solar cells, these films significantly enhanced cell performance due to low recombination at the p/i interfaces, decrease of the series resistance and low absorption loss at the short wavelengths. Boron-doped hydrogenated silicon carbide alloys containing silicon nanocrystallites (p-nc-SiC:H) were prepared using a plasma-enhanced chemical vapor deposition system with a mixture of CH4, SiH4, B2H6 and H2 gases. The influence of hydrogen dilution on the material properties of the p-nc-SiC:H films was investigated, and their roles as window layers in hydrogenated nanocrystalline silicon (nc-Si:H) solar cells were examined. By increasing the RH (H2/SiH4) ratio from 90 to 220, the Si--C bond density in the p-nc-SiC:H films increased from 5.20×1019 to 7.07×1019/cm3, resulting in a significant increase of the bandgap from 2.09 to 2.23eV in comparison with the bandgap of 1.95eV for p-nc-Si:H films. For the films deposited at a high RH ratio, the Si nanocrystallites with a size of 3-15nm were formed in the amorphous SiC:H matrix. The Si nanocrystallites played an important role in the enhancement of vertical charge transport in the p-nc-SiC:H films, which was verified by conductive atomic force microscopy measurements. When the p-nc-SiC:H films deposited at RH=220 were applied in the nc-Si:H solar cells, a high conversion efficiency of 8.26% (Voc=0.53V, Jsc=23.98mA/cm2 and FF=0.65) was obtained compared to 6.36% (Voc=0.44V, Jsc=21.90mA/cm2 and FF=0.66) of the solar cells with reference p-nc-Si:H films. Further enhancement in the cell performance was achieved using p-nc-SiC:H bilayers consisting of highly doped upper layers and low-level doped bottom layers, which led to the increased conversion efficiency of 9.03%. Copyright © 2015 John Wiley & Sons, Ltd. Boron-doped hydrogenated silicon carbide alloys containing silicon nanocrystallites (p-nc-SiC:H) were prepared using a plasma-enhanced chemical vapor deposition system with a mixture of CH sub(4), SiH sub(4), B sub(2)H sub(6) and H sub(2) gases. The influence of hydrogen dilution on the material properties of the p-nc-SiC:H films was investigated, and their roles as window layers in hydrogenated nanocrystalline silicon (nc-Si:H) solar cells were examined. By increasing the R sub(H) (H sub(2)/SiH sub(4)) ratio from 90 to 220, the Si-C bond density in the p-nc-SiC:H films increased from 5.2010 super(19) to 7.0710 super(19)/cm super(3), resulting in a significant increase of the bandgap from 2.09 to 2.23eV in comparison with the bandgap of 1.95eV for p-nc-Si:H films. For the films deposited at a high R sub(H) ratio, the Si nanocrystallites with a size of 3-15nm were formed in the amorphous SiC:H matrix. The Si nanocrystallites played an important role in the enhancement of vertical charge transport in the p-nc-SiC:H films, which was verified by conductive atomic force microscopy measurements. When the p-nc-SiC:H films deposited at R sub(H)=220 were applied in the nc-Si:H solar cells, a high conversion efficiency of 8.26% (V sub(oc)=0.53V, J sub(sc)=23.98mA/cm super(2) and FF=0.65) was obtained compared to 6.36% (V sub(oc)=0.44V, J sub(sc)=21.90mA/cm super(2) and FF=0.66) of the solar cells with reference p-nc-Si:H films. Further enhancement in the cell performance was achieved using p-nc-SiC:H bilayers consisting of highly doped upper layers and low-level doped bottom layers, which led to the increased conversion efficiency of 9.03%. Wide bandgap (E sub(04)=2.23eV) p-nc-SiC:H window layers with enhanced vertical charge transport were successfully prepared using plasma-enhanced chemical vapor deposition under a high hydrogen dilution condition, which led to the formation of Si nanocrystallites in the amorphous SiC:H matrix. When applied to n-i-p nc-Si:H solar cells, these films significantly enhanced cell performance due to low recombination at the p/i interfaces, decrease of the series resistance and low absorption loss at the short wavelengths. |
Author | Park, Joo Hyung Kim, Donghwan Cho, Jun-Sik Ahn, Seung Kyu Yoon, Kyung Hoon Lee, Ji Eun Yoo, Jinsu |
Author_xml | – sequence: 1 givenname: Ji Eun surname: Lee fullname: Lee, Ji Eun organization: Photovoltaic Laboratory, Korea Institute of Energy Research, 152 Gajeong-ro, Yuseong-gu, 305-343, Daejeon, Republic of Korea – sequence: 2 givenname: Seung Kyu surname: Ahn fullname: Ahn, Seung Kyu organization: Photovoltaic Laboratory, Korea Institute of Energy Research, 152 Gajeong-ro, Yuseong-gu, 305-343, Daejeon, Republic of Korea – sequence: 3 givenname: Joo Hyung surname: Park fullname: Park, Joo Hyung organization: Photovoltaic Laboratory, Korea Institute of Energy Research, 152 Gajeong-ro, Yuseong-gu, 305-343, Daejeon, Republic of Korea – sequence: 4 givenname: Jinsu surname: Yoo fullname: Yoo, Jinsu organization: Photovoltaic Laboratory, Korea Institute of Energy Research, 152 Gajeong-ro, Yuseong-gu, 305-343, Daejeon, Republic of Korea – sequence: 5 givenname: Kyung Hoon surname: Yoon fullname: Yoon, Kyung Hoon organization: Photovoltaic Laboratory, Korea Institute of Energy Research, 152 Gajeong-ro, Yuseong-gu, 305-343, Daejeon, Republic of Korea – sequence: 6 givenname: Donghwan surname: Kim fullname: Kim, Donghwan email: Correspondence: Jun-Sik Cho, Photovoltaic Laboratory, Korea Institute of Energy Research, 152 Gajeong-ro, Yuseong-gu, Daejeon 305-343, Republic of Korea. Correspondence: Donghwan Kim, Department of Material Science and Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul 136-701, Republic of Korea., jscho@kier.re.krdonghwan@korea.ac.kr organization: Department of Material Science and Engineering, Korea University, Anam-dong, Seongbuk-gu, 136-701, Seoul, Republic of Korea – sequence: 7 givenname: Jun-Sik surname: Cho fullname: Cho, Jun-Sik email: Correspondence: Jun-Sik Cho, Photovoltaic Laboratory, Korea Institute of Energy Research, 152 Gajeong-ro, Yuseong-gu, Daejeon 305-343, Republic of Korea. Correspondence: Donghwan Kim, Department of Material Science and Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul 136-701, Republic of Korea., jscho@kier.re.krdonghwan@korea.ac.kr organization: Photovoltaic Laboratory, Korea Institute of Energy Research, 152 Gajeong-ro, Yuseong-gu, 305-343, Daejeon, Republic of Korea |
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Snippet | Boron‐doped hydrogenated silicon carbide alloys containing silicon nanocrystallites (p‐nc‐SiC:H) were prepared using a plasma‐enhanced chemical vapor... Abstract Boron‐doped hydrogenated silicon carbide alloys containing silicon nanocrystallites (p‐nc‐SiC:H) were prepared using a plasma‐enhanced chemical vapor... Boron-doped hydrogenated silicon carbide alloys containing silicon nanocrystallites (p-nc-SiC:H) were prepared using a plasma-enhanced chemical vapor... |
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SubjectTerms | Alloys Chemical vapor deposition conversion efficiency Deposition nanocrystallites Nanocrystals Photovoltaic cells Silicon Silicon carbide silicon thin-film solar cell Solar cells Thin films |
Title | Boron-doped hydrogenated silicon carbide alloys containing silicon nanocrystallites for highly efficient nanocrystalline silicon thin-film solar cells |
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