Physical basis for high-power semiconductor nanosecond opening switches
The physical basis for semiconductor nanosecond opening switches is a specially organized recovery process in the diode. There are two modes of this process: junction recovery (JR) mode and silicon opening switch (SOS) mode. In the JR mode, the current interruption occurs due to the recovery of pn-j...
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Published in | IEEE transactions on plasma science Vol. 28; no. 5; pp. 1540 - 1544 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.10.2000
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
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Abstract | The physical basis for semiconductor nanosecond opening switches is a specially organized recovery process in the diode. There are two modes of this process: junction recovery (JR) mode and silicon opening switch (SOS) mode. In the JR mode, the current interruption occurs due to the recovery of pn-junction blocking capability, and in the SOS mode, due to the drastic increase in resistance of low-doped part of p-layer, where reverse current density exceeds the saturated value j/sub r/>qN/sub d/V/sub s/. JR mode is preferable for generators with a pulse rise-time of 0.5-3 ns and a pulse of power of less than 50-80 MW, and SOS mode at pulse rise-time of more than 5 ns for any pulse power and at any pulse rise-time if power is higher than 100 MW. |
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AbstractList | The physical basis for semiconductor nanosecond opening switches is a specially organized recovery process in the diode. There are two modes of this process: junction recovery (JR) mode and silicon opening switch (SOS) mode. In the JR mode, the current interruption occurs due to the recovery of pn-junction blocking capability, and in the SOS mode, due to the drastic increase in resistance of low-doped part of p-layer, where reverse current density exceeds the saturated value j/sub r/>qN/sub d/V/sub s/. JR mode is preferable for generators with a pulse rise-time of 0.5-3 ns and a pulse of power of less than 50-80 MW, and SOS mode at pulse rise-time of more than 5 ns for any pulse power and at any pulse rise-time if power is higher than 100 MW. The physical basis for semiconductor nanosecond opening switches is a specially organized recovery process in the diode. There are two modes of this process: the junction recovery (JR) mode and the silicon opening switch (SOS) mode. In the JR mode, the current interruption occurs due to the recovery of pn-junction blocking capability, and in the SOS mode, due to the drastic increase in resistance of low-doped part of the p-layer, where reverse current density exceeds the saturated value j(r) > qN(d)V(S). The JR mode is preferable for generators with a pulse rise-time of 0.5-3 ns and a pulse of power of less than 50-80 MW, and the SOS mode at a pulse rise-time of more than 5 ns for any pulse power and at any pulse rise-time if the power is higher than 100 MW. (Author) The physical basis for semiconductor nanosecond opening switches is a specially organized recovery process in the diode. There are two modes of this process: junction recovery (JR) mode and silicon opening switch (SOS) mode. The physical basis for semiconductor nanosecond opening switches is a specially organized recovery process in the diode. There are two modes of this process: junction recovery (JR) mode and silicon opening switch (SOS) mode. In the JR mode, the current interruption occurs due to the recovery of pn-junction blocking capability, and in the SOS mode, due to the drastic increase in resistance of low-doped part of p-layer, where reverse current density exceeds the saturated value j sub(r)>qN sub(d)V sub(s). JR mode is preferable for generators with a pulse rise-time of 0.5-3 ns and a pulse of power of less than 50-80 MW, and SOS mode at pulse rise-time of more than 5 ns for any pulse power and at any pulse rise-time if power is higher than 100 MW The physical basis for semiconductor nanosecond opening switches is a specially organized recovery process in the diode. There are two modes of this process: junction recovery (JR) mode and silicon opening switch (SOS) mode. In the JR mode, the current interruption occurs due to the recovery of pn-junction blocking capability, and in the SOS mode, due to the drastic increase in resistance of low-doped part of p-layer, where reverse current density exceeds the saturated value j(r) > qN(d)V(s). JR mode is preferable for generators with a pulse rise-time of 0.5-3 ns and a pulse of power of less than 50-80 MW, and SOS mode at pulse rise-time of more than 5 ns for any pulse power and at any pulse rise-time if power is higher than 100 MW |
Author | Mesyats, G.A. Grekhov, I.V. |
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Cites_doi | 10.1109/PPC.1997.679367 10.1016/0038-1101(85)90130-3 10.1109/PPC.1997.674522 |
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References | lyubutin (ref4) 1992 darznek (ref5) 1994; 334 ref2 ref1 ref3 |
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SubjectTerms | Current density Diodes Electricity Immune system Industrial power systems Nanocomposites Nanomaterials Nanostructure Physics Plasma Plasma applications Power generation Power semiconductor switches Pulse generation Pulse power systems Recovery Semiconductor diodes Semiconductors Silicon Switches |
Title | Physical basis for high-power semiconductor nanosecond opening switches |
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