Crystal time-reversal symmetry breaking and spontaneous Hall effect in collinear antiferromagnets
Identification of a previously overlooked spontaneous Hall effect mechanism creates opportunities in low-dissipation spintronics. Electrons, commonly moving along the applied electric field, acquire in certain magnets a dissipationless transverse velocity. This spontaneous Hall effect, found more th...
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| Published in | Science advances Vol. 6; no. 23; p. eaaz8809 |
|---|---|
| Main Authors | , , , |
| Format | Journal Article |
| Language | English |
| Published |
American Association for the Advancement of Science
05.06.2020
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| Subjects | |
| Online Access | Get full text |
| ISSN | 2375-2548 2375-2548 |
| DOI | 10.1126/sciadv.aaz8809 |
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| Abstract | Identification of a previously overlooked spontaneous Hall effect mechanism creates opportunities in low-dissipation spintronics.
Electrons, commonly moving along the applied electric field, acquire in certain magnets a dissipationless transverse velocity. This spontaneous Hall effect, found more than a century ago, has been understood in terms of the time-reversal symmetry breaking by the internal spin structure of a ferromagnetic, noncolinear antiferromagnetic, or skyrmionic form. Here, we identify previously overlooked robust Hall effect mechanism arising from collinear antiferromagnetism combined with nonmagnetic atoms at noncentrosymmetric positions. We predict a large magnitude of this crystal Hall effect in a room temperature collinear antiferromagnet RuO
2
and catalog, based on symmetry rules, extensive families of material candidates. We show that the crystal Hall effect is accompanied by the possibility to control its sign by the crystal chirality. We illustrate that accounting for the full magnetization density distribution instead of the simplified spin structure sheds new light on symmetry breaking phenomena in magnets and opens an alternative avenue toward low-dissipation nanoelectronics. |
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| AbstractList | Electrons, commonly moving along the applied electric field, acquire in certain magnets a dissipationless transverse velocity. This spontaneous Hall effect, found more than a century ago, has been understood in terms of the time-reversal symmetry breaking by the internal spin structure of a ferromagnetic, noncolinear antiferromagnetic, or skyrmionic form. Here, we identify previously overlooked robust Hall effect mechanism arising from collinear antiferromagnetism combined with nonmagnetic atoms at noncentrosymmetric positions. We predict a large magnitude of this crystal Hall effect in a room temperature collinear antiferromagnet RuO2 and catalog, based on symmetry rules, extensive families of material candidates. We show that the crystal Hall effect is accompanied by the possibility to control its sign by the crystal chirality. We illustrate that accounting for the full magnetization density distribution instead of the simplified spin structure sheds new light on symmetry breaking phenomena in magnets and opens an alternative avenue toward low-dissipation nanoelectronics.Electrons, commonly moving along the applied electric field, acquire in certain magnets a dissipationless transverse velocity. This spontaneous Hall effect, found more than a century ago, has been understood in terms of the time-reversal symmetry breaking by the internal spin structure of a ferromagnetic, noncolinear antiferromagnetic, or skyrmionic form. Here, we identify previously overlooked robust Hall effect mechanism arising from collinear antiferromagnetism combined with nonmagnetic atoms at noncentrosymmetric positions. We predict a large magnitude of this crystal Hall effect in a room temperature collinear antiferromagnet RuO2 and catalog, based on symmetry rules, extensive families of material candidates. We show that the crystal Hall effect is accompanied by the possibility to control its sign by the crystal chirality. We illustrate that accounting for the full magnetization density distribution instead of the simplified spin structure sheds new light on symmetry breaking phenomena in magnets and opens an alternative avenue toward low-dissipation nanoelectronics. Identification of a previously overlooked spontaneous Hall effect mechanism creates opportunities in low-dissipation spintronics. Electrons, commonly moving along the applied electric field, acquire in certain magnets a dissipationless transverse velocity. This spontaneous Hall effect, found more than a century ago, has been understood in terms of the time-reversal symmetry breaking by the internal spin structure of a ferromagnetic, noncolinear antiferromagnetic, or skyrmionic form. Here, we identify previously overlooked robust Hall effect mechanism arising from collinear antiferromagnetism combined with nonmagnetic atoms at noncentrosymmetric positions. We predict a large magnitude of this crystal Hall effect in a room temperature collinear antiferromagnet RuO 2 and catalog, based on symmetry rules, extensive families of material candidates. We show that the crystal Hall effect is accompanied by the possibility to control its sign by the crystal chirality. We illustrate that accounting for the full magnetization density distribution instead of the simplified spin structure sheds new light on symmetry breaking phenomena in magnets and opens an alternative avenue toward low-dissipation nanoelectronics. |
| Author | González-Hernández, Rafael Šmejkal, Libor Jungwirth, T. Sinova, J. |
| Author_xml | – sequence: 1 givenname: Libor orcidid: 0000-0003-1193-1372 surname: Šmejkal fullname: Šmejkal, Libor organization: Institut für Physik, Johannes Gutenberg Universität Mainz, 55128 Mainz, Germany., Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 162 00 Praha 6, Czech Republic., Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 121 16 Prague 2, Czech Republic – sequence: 2 givenname: Rafael surname: González-Hernández fullname: González-Hernández, Rafael organization: Institut für Physik, Johannes Gutenberg Universität Mainz, 55128 Mainz, Germany., Grupo de Investigación en Física Aplicada, Departamento de Física, Universidad del Norte, Barranquilla, Colombia – sequence: 3 givenname: T. orcidid: 0000-0002-9910-1674 surname: Jungwirth fullname: Jungwirth, T. organization: Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 162 00 Praha 6, Czech Republic., School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK – sequence: 4 givenname: J. orcidid: 0000-0002-9490-2333 surname: Sinova fullname: Sinova, J. organization: Institut für Physik, Johannes Gutenberg Universität Mainz, 55128 Mainz, Germany., Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 162 00 Praha 6, Czech Republic |
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| Snippet | Identification of a previously overlooked spontaneous Hall effect mechanism creates opportunities in low-dissipation spintronics.
Electrons, commonly moving... Electrons, commonly moving along the applied electric field, acquire in certain magnets a dissipationless transverse velocity. This spontaneous Hall effect,... |
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| Title | Crystal time-reversal symmetry breaking and spontaneous Hall effect in collinear antiferromagnets |
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