Structural and optical properties of In-rich InGaN nanodots grown by metallo-organic chemical vapor deposition
The surface morphologies, alloy compositions and emission properties of In-rich InxGa1-xN nanodots (x > =0.87) grown by metallo-organic chemical vapor deposition at various growth temperatures (550-750 deg C) were investigated. We found that the nucleation of InGaN dots was dominated by the surfa...
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| Published in | Nanotechnology Vol. 18; no. 40; pp. 405305 - 405305 (4) |
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| Main Authors | , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
IOP Publishing
10.10.2007
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| Online Access | Get full text |
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| Abstract | The surface morphologies, alloy compositions and emission properties of In-rich InxGa1-xN nanodots (x > =0.87) grown by metallo-organic chemical vapor deposition at various growth temperatures (550-750 deg C) were investigated. We found that the nucleation of InGaN dots was dominated by the surface migration of In adatoms. A higher Ga content can be achieved at lower growth temperatures due to the relatively lower migration ability of Ga adatoms. At higher growth temperatures, the InGaN dots tend to decompose into In-rich islands and a thin Ga-rich layer. These In-rich islands exhibit photoluminescence emission in the near-infrared range. Another visible emission band was also observed for samples grown at higher temperatures. The formation of a thin Ga-rich layer is likely to be responsible for the visible emission. |
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| AbstractList | The surface morphologies, alloy compositions and emission properties of In-rich InxGa1-xN nanodots (x > =0.87) grown by metallo-organic chemical vapor deposition at various growth temperatures (550-750 deg C) were investigated. We found that the nucleation of InGaN dots was dominated by the surface migration of In adatoms. A higher Ga content can be achieved at lower growth temperatures due to the relatively lower migration ability of Ga adatoms. At higher growth temperatures, the InGaN dots tend to decompose into In-rich islands and a thin Ga-rich layer. These In-rich islands exhibit photoluminescence emission in the near-infrared range. Another visible emission band was also observed for samples grown at higher temperatures. The formation of a thin Ga-rich layer is likely to be responsible for the visible emission. |
| Author | Lee, Ming-Chih Ke, Wen-Chen Chou, Wu-Ching Lin, Hsuan Chang, Wen-Hao Chen, Wei-Kuo Tsai, Wen-Che |
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| CitedBy_id | crossref_primary_10_1088_0022_3727_44_34_345101 crossref_primary_10_1143_JJAP_50_065601 crossref_primary_10_1021_acsami_8b16767 crossref_primary_10_1088_1674_1056_20_7_076101 crossref_primary_10_1088_0022_3727_44_44_445306 crossref_primary_10_7567_JJAP_50_065601 crossref_primary_10_1063_1_3499618 |
| Cites_doi | 10.1063/1.1595135 10.1063/1.120639 10.1063/1.2203510 10.1063/1.2425038 10.1063/1.1482786 10.1063/1.123078 10.1063/1.120025 10.1063/1.125444 10.1126/science.281.5379.956 10.1063/1.121168 10.1002/1521-3951(200202)229:33.0.CO;2-O 10.1063/1.118493 10.1063/1.126098 10.1093/oso/9780198501596.001.0001 10.1007/978-3-662-03462-0 10.1103/PhysRevLett.82.237 10.1063/1.117683 |
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| References | 11 12 13 14 15 16 Nakamura S (2) 1997 17 Gil B (1) 1998 3 4 5 6 7 8 9 10 |
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