Dependence of implantation temperature on chemical behavior of energetic deuterium implanted into tungsten carbide

Dependence of implantation temperature on chemical behavior of energetic deuterium implanted into WC was investigated by TDS and XPS. 1.0keV D2+ ions were implanted into WC samples at the implantation temperature range of 323–873K. It was found that the deuterium retention decreased as the implantat...

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Published inJournal of nuclear materials Vol. 363-365; pp. 910 - 914
Main Authors Igarashi, E., Nishikawa, Y., Nakahata, T., Yoshikawa, A., Oyaidzu, M., Oya, Y., Okuno, K.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 15.06.2007
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Abstract Dependence of implantation temperature on chemical behavior of energetic deuterium implanted into WC was investigated by TDS and XPS. 1.0keV D2+ ions were implanted into WC samples at the implantation temperature range of 323–873K. It was found that the deuterium retention decreased as the implantation temperature increased. Above 573K, most of the retained deuterium was bound to C, which was less than 20% of the total D retention after D2+ implantation at 323K. Above 673K, C was segregated on the WC surface and some of the implanted deuterium was retained in the segregated carbon layer. Additionally, it can be said that the D retention in WC was much less than that in other carbon-related materials, such as graphite and SiC. Hydrogen isotope retention can be reduced significantly when WC is formed on a divertor surface as a redeposited layer.
AbstractList Dependence of implantation temperature on chemical behavior of energetic deuterium implanted into WC was investigated by TDS and XPS. 1.0keV ions were implanted into WC samples at the implantation temperature range of 323-873K. It was found that the deuterium retention decreased as the implantation temperature increased. Above 573K, most of the retained deuterium was bound to C, which was less than 20% of the total D retention after implantation at 323K. Above 673K, C was segregated on the WC surface and some of the implanted deuterium was retained in the segregated carbon layer. Additionally, it can be said that the D retention in WC was much less than that in other carbon-related materials, such as graphite and SiC. Hydrogen isotope retention can be reduced significantly when WC is formed on a divertor surface as a redeposited layer.
Dependence of implantation temperature on chemical behavior of energetic deuterium implanted into WC was investigated by TDS and XPS. 1.0keV D2+ ions were implanted into WC samples at the implantation temperature range of 323–873K. It was found that the deuterium retention decreased as the implantation temperature increased. Above 573K, most of the retained deuterium was bound to C, which was less than 20% of the total D retention after D2+ implantation at 323K. Above 673K, C was segregated on the WC surface and some of the implanted deuterium was retained in the segregated carbon layer. Additionally, it can be said that the D retention in WC was much less than that in other carbon-related materials, such as graphite and SiC. Hydrogen isotope retention can be reduced significantly when WC is formed on a divertor surface as a redeposited layer.
Dependence of implantation temperature on chemical behavior of energetic deuterium implanted into WC was investigated by TDS and XPS. 1.0 keV ions were implanted into WC samples at the implantation temperature range of 323-873 K. It was found that the deuterium retention decreased as the implantation temperature increased. Above 573 K, most of the retained deuterium was bound to C, which was less than 20% of the total D retention after implantation at 323 K. Above 673 K, C was segregated on the WC surface and some of the implanted deuterium was retained in the segregated carbon layer. Additionally, it can be said that the D retention in WC was much less than that in other carbon-related materials, such as graphite and SiC. Hydrogen isotope retention can be reduced significantly when WC is formed on a divertor surface as a redeposited layer.
Author Nishikawa, Y.
Nakahata, T.
Yoshikawa, A.
Oya, Y.
Igarashi, E.
Oyaidzu, M.
Okuno, K.
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Cites_doi 10.1016/0022-3115(94)00469-2
10.1238/Physica.Topical.103a00117
10.1016/S0043-1648(99)00288-4
10.1016/S0920-3796(00)00347-1
10.1016/j.fusengdes.2005.09.024
10.1016/S0022-3115(02)01424-1
10.1016/0168-583X(91)95614-J
10.1016/S0920-3796(99)00047-2
10.1016/S0022-3115(02)01327-2
10.2320/matertrans.46.552
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Keywords 81.05.Je
33.60.Fy
Divertor material
Tungsten
Tritium inventory
Chemical erosion
52.49.Hf
Thermal desorption
82.30.Nr
Deuterium
Nuclear fusion reactor
Tungsten carbide
Silicon carbide
Fusion reactor divertors
Graphite
Temperature effect
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Snippet Dependence of implantation temperature on chemical behavior of energetic deuterium implanted into WC was investigated by TDS and XPS. 1.0keV D2+ ions were...
Dependence of implantation temperature on chemical behavior of energetic deuterium implanted into WC was investigated by TDS and XPS. 1.0 keV ions were...
Dependence of implantation temperature on chemical behavior of energetic deuterium implanted into WC was investigated by TDS and XPS. 1.0keV ions were...
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SubjectTerms Applied sciences
Chemical erosion
Controled nuclear fusion plants
Divertor material
Energy
Energy. Thermal use of fuels
Exact sciences and technology
Installations for energy generation and conversion: thermal and electrical energy
Thermal desorption
Tritium inventory
Tungsten
Title Dependence of implantation temperature on chemical behavior of energetic deuterium implanted into tungsten carbide
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