Dependence of implantation temperature on chemical behavior of energetic deuterium implanted into tungsten carbide
Dependence of implantation temperature on chemical behavior of energetic deuterium implanted into WC was investigated by TDS and XPS. 1.0keV D2+ ions were implanted into WC samples at the implantation temperature range of 323–873K. It was found that the deuterium retention decreased as the implantat...
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Published in | Journal of nuclear materials Vol. 363-365; pp. 910 - 914 |
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15.06.2007
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Abstract | Dependence of implantation temperature on chemical behavior of energetic deuterium implanted into WC was investigated by TDS and XPS. 1.0keV D2+ ions were implanted into WC samples at the implantation temperature range of 323–873K. It was found that the deuterium retention decreased as the implantation temperature increased. Above 573K, most of the retained deuterium was bound to C, which was less than 20% of the total D retention after D2+ implantation at 323K. Above 673K, C was segregated on the WC surface and some of the implanted deuterium was retained in the segregated carbon layer. Additionally, it can be said that the D retention in WC was much less than that in other carbon-related materials, such as graphite and SiC. Hydrogen isotope retention can be reduced significantly when WC is formed on a divertor surface as a redeposited layer. |
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AbstractList | Dependence of implantation temperature on chemical behavior of energetic deuterium implanted into WC was investigated by TDS and XPS. 1.0keV ions were implanted into WC samples at the implantation temperature range of 323-873K. It was found that the deuterium retention decreased as the implantation temperature increased. Above 573K, most of the retained deuterium was bound to C, which was less than 20% of the total D retention after implantation at 323K. Above 673K, C was segregated on the WC surface and some of the implanted deuterium was retained in the segregated carbon layer. Additionally, it can be said that the D retention in WC was much less than that in other carbon-related materials, such as graphite and SiC. Hydrogen isotope retention can be reduced significantly when WC is formed on a divertor surface as a redeposited layer. Dependence of implantation temperature on chemical behavior of energetic deuterium implanted into WC was investigated by TDS and XPS. 1.0keV D2+ ions were implanted into WC samples at the implantation temperature range of 323–873K. It was found that the deuterium retention decreased as the implantation temperature increased. Above 573K, most of the retained deuterium was bound to C, which was less than 20% of the total D retention after D2+ implantation at 323K. Above 673K, C was segregated on the WC surface and some of the implanted deuterium was retained in the segregated carbon layer. Additionally, it can be said that the D retention in WC was much less than that in other carbon-related materials, such as graphite and SiC. Hydrogen isotope retention can be reduced significantly when WC is formed on a divertor surface as a redeposited layer. Dependence of implantation temperature on chemical behavior of energetic deuterium implanted into WC was investigated by TDS and XPS. 1.0 keV ions were implanted into WC samples at the implantation temperature range of 323-873 K. It was found that the deuterium retention decreased as the implantation temperature increased. Above 573 K, most of the retained deuterium was bound to C, which was less than 20% of the total D retention after implantation at 323 K. Above 673 K, C was segregated on the WC surface and some of the implanted deuterium was retained in the segregated carbon layer. Additionally, it can be said that the D retention in WC was much less than that in other carbon-related materials, such as graphite and SiC. Hydrogen isotope retention can be reduced significantly when WC is formed on a divertor surface as a redeposited layer. |
Author | Nishikawa, Y. Nakahata, T. Yoshikawa, A. Oya, Y. Igarashi, E. Oyaidzu, M. Okuno, K. |
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Cites_doi | 10.1016/0022-3115(94)00469-2 10.1238/Physica.Topical.103a00117 10.1016/S0043-1648(99)00288-4 10.1016/S0920-3796(00)00347-1 10.1016/j.fusengdes.2005.09.024 10.1016/S0022-3115(02)01424-1 10.1016/0168-583X(91)95614-J 10.1016/S0920-3796(99)00047-2 10.1016/S0022-3115(02)01327-2 10.2320/matertrans.46.552 |
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Keywords | 81.05.Je 33.60.Fy Divertor material Tungsten Tritium inventory Chemical erosion 52.49.Hf Thermal desorption 82.30.Nr Deuterium Nuclear fusion reactor Tungsten carbide Silicon carbide Fusion reactor divertors Graphite Temperature effect |
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Snippet | Dependence of implantation temperature on chemical behavior of energetic deuterium implanted into WC was investigated by TDS and XPS. 1.0keV D2+ ions were... Dependence of implantation temperature on chemical behavior of energetic deuterium implanted into WC was investigated by TDS and XPS. 1.0 keV ions were... Dependence of implantation temperature on chemical behavior of energetic deuterium implanted into WC was investigated by TDS and XPS. 1.0keV ions were... |
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SubjectTerms | Applied sciences Chemical erosion Controled nuclear fusion plants Divertor material Energy Energy. Thermal use of fuels Exact sciences and technology Installations for energy generation and conversion: thermal and electrical energy Thermal desorption Tritium inventory Tungsten |
Title | Dependence of implantation temperature on chemical behavior of energetic deuterium implanted into tungsten carbide |
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