High-k Gate Dielectric Films Studied by Extremely Asymmetric X-ray Diffraction and X-ray Photoelectron Spectroscopy

• Published in: Journal of physics. Conference series Vol. 83; no. 1; p. 012011
• Main Authors: Ito, Yuki, Akimoto, Koichi, Yoshida, Hironori, Emoto, Takashi, Kobayashi, Daisuke, Hirose, Kazuyuki
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 01.10.2007
• Subjects: Ammonia; Annealing; Asymmetry; Compressive properties; Deposition; Lattice strain; Permittivity; Photoelectrons; Physics; Silicon dioxide; Silicon films; Silicon substrates; Spectrum analysis; X ray photoelectron spectroscopy; X-ray diffraction
• ISSN: 1742-6596; 1742-6588; 1742-6596
• DOI: 10.1088/1742-6596/83/1/012011

We studied HfAlOx(N)/SiO2/Si films which were fabricated by the layer-by-layer deposition and annealing (LL-D&A) method with different annealing conditions. In this time, in-situ annealing was performed at various temperatures in an NH3 ambient. In addition, post-deposition annealing (PDA) was performed for some samples. For each sample, the interfacial lattice strain was evaluated using extremely asymmetric X-ray diffraction and the local dielectric constant near the Al atoms was measured by X-ray photoelectron spectroscopy (XPS). Observation of the strain field was done by measuring the X-ray rocking curve of the Si 113 reflection of the Si (001) substrate under grazing incidence conditions. It was found that in the case of the samples without PDA, for higher in-situ annealing temperatures compressive strain is introduced and the local dielectric constant becomes lower. For the samples with PDA, the differences of the lattice strain and the local dielectric constant are small for different in-situ annealing temperatures.