Removal of impurities from metallurgical grade silicon by electron beam melting

Solar cells are currently fabricated from a variety of silicon-based materials. Now the major silicon material for solar cells is the scrap of electronic grade silicon (EG-Si). But in the current market it is difficult to secure a steady supply of this material. Therefore, alternative production pro...

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Published inJournal of semiconductors Vol. 32; no. 3; pp. 033003 - 1-5
Main Authors Luo, Dawei (大伟 罗), Liu, Ning (宁刘), Lu, Yiping (一平 卢), Zhang, Guoliang (国梁 张), Li, Tingju (廷举 李)
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.03.2011
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ISSN1674-4926
DOI10.1088/1674-4926/32/3/033003

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Abstract Solar cells are currently fabricated from a variety of silicon-based materials. Now the major silicon material for solar cells is the scrap of electronic grade silicon (EG-Si). But in the current market it is difficult to secure a steady supply of this material. Therefore, alternative production processes are needed to increase the feedstock. In this paper, EBM is used to purify silicon. MG-Si particles after leaching with an initial purity of 99.88% in mass as starting materials were used. The final purity of the silicon disk obtained after EBM was above 99.995% in mass. This result demonstrates that EBM can effectively remove impurities from silicon. This paper mainly studies the impurity distribution in the silicon disk after EBM.
AbstractList Solar cells are currently fabricated from a variety of silicon-based materials. Now the major silicon material for solar cells is the scrap of electronic grade silicon (EG-Si). But in the current market it is difficult to secure a steady supply of this material. Therefore, alternative production processes are needed to increase the feedstock. In this paper, EBM is used to purify silicon. MG-Si particles after leaching with an initial purity of 99.88% in mass as starting materials were used. The final purity of the silicon disk obtained after EBM was above 99.995% in mass. This result demonstrates that EBM can effectively remove impurities from silicon. This paper mainly studies the impurity distribution in the silicon disk after EBM.
Author Lu, Yiping (一平 卢)
Zhang, Guoliang (国梁 张)
Li, Tingju (廷举 李)
Liu, Ning (宁刘)
Luo, Dawei (大伟 罗)
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10.1016/S0927-0248(02)00471-3
10.1016/0079-6425(91)90001-A
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10.1016/j.jmatprotec.2004.03.035
10.2320/matertrans.45.844
10.2320/matertrans.45.850
10.1016/j.msea.2004.08.036
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References 12
Barbosa L C (11) 1981
Kazuhiro H Y (2) 1998
3
4
Ikeda T (13) 1996; 37
5
6
7
8
9
Naumov A V (1) 2007; 1
10
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Snippet Solar cells are currently fabricated from a variety of silicon-based materials. Now the major silicon material for solar cells is the scrap of electronic grade...
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SubjectTerms Disks
Impurities
Metal scrap
Photovoltaic cells
Purity
Semiconductors
Silicon
Solar cells
Title Removal of impurities from metallurgical grade silicon by electron beam melting
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