Influence of naphthacene doping on the electrical and light-emitting behavior of 8-hydroxyquinoline aluminum based electroluminescent devices

• Published in: Applied surface science Vol. 65; no. 1-4; pp. 376 - 380
• Main Authors: Wada, Tatsuaki, Yogo, Yukiaki, Kikuma, Isao, Masui, Masayoshi, Anzai, Mitsutosi, Takeuchi, Manabu
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.03.1993; Elsevier Science
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Physics; Electroluminescent device; Electrical properties; Brightness; Optical properties; Doping; Diffraction pattern; Electroluminescence; Current density; X ray diffraction
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/0169-4332(93)90689-9

Examined was the influence of naphthacene doping to the light-emitting layer of 8-hydroxyquinoline aluminum (Alq3) on electrical and light-emitting behavior of organic electroluminescent (EL) cells. The light-emitting and hole-transport layers of the EL cells were prepared by using a coevaporation method. X-ray diffraction patterns indicated an amorphous structure of the Alq3 layer regardless of the doping. Heavy doping decreased both the current density and brightness. The EL peak at around 490 nm increased with an increase in the naphthacene concentration, whereas the spectrum was not shifted by the doping. The EL peak was not due to the emission of naphthacene molecules. The light-emitting behavior of the EL cells due to the doping will be discussed.