Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs
The effects of device orientation on heavy ion-induced multiple-bit upset (MBU) in 65 nm SRAMs are examined. The MBU response is shown to depend on the orientation of the device during irradiation. The response depends on the direction of the incident ion to the n- and p-wells of the SRAM. The MBU r...
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| Published in | IEEE transactions on nuclear science Vol. 55; no. 6; pp. 2880 - 2885 |
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| Main Authors | , , , , , , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
New York
IEEE
01.12.2008
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subjects | |
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| Abstract | The effects of device orientation on heavy ion-induced multiple-bit upset (MBU) in 65 nm SRAMs are examined. The MBU response is shown to depend on the orientation of the device during irradiation. The response depends on the direction of the incident ion to the n- and p-wells of the SRAM. The MBU response is simulated using Monte Carlo methods for a space environment. The probability is calculated for event size. Single-bit upsets in the space environment account for 90% of all events with exponentially decreasing probabilities of larger MBU events. |
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| AbstractList | The effects of device orientation on heavy ion-induced multiple-bit upset (MBU) in 65 nm SRAMs are examined. The MBU response is shown to depend on the orientation of the device during irradiation. The response depends on the direction of the incident ion to the n- and p-wells of the SRAM. The MBU response is simulated using Monte Carlo methods for a space environment. The probability is calculated for event size. Single-bit upsets in the space environment account for 90% of all events with exponentially decreasing probabilities of larger MBU events. The effects of device orientation on heavy ion-induced multiple-bit upset (MBU) in 65 nm SRAMs are examined. The MBU response is shown to depend on the orientation of the device during irradiation. The response depends on the direction of the [abstract truncated by publisher]. |
| Author | Friendlich, M.R. Seidleck, C.M. Tipton, A.D. Campola, M.J. Reed, R.A. LaBel, K.A. Black, J.D. Kim, H.S. Mendenhall, M.H. Hutson, J.M. Xapsos, M.A. Pellish, J.A. Weller, R.A. Schrimpf, R.D. Baumann, R. Deng, X. Marshall, A. |
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| Snippet | The effects of device orientation on heavy ion-induced multiple-bit upset (MBU) in 65 nm SRAMs are examined. The MBU response is shown to depend on the... |
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| SubjectTerms | Circuits GEANT4 heavy ion MBU MCU MRED Multiple-bit upset NASA Probability Protons Random access memory Semiconductor materials SEU Single event upset soft error Space technology SRAM Testing |
| Title | Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs |
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