The resurrection of tellurium as an elemental two-dimensional semiconductor

The graphene boom has triggered a widespread search for novel elemental van der Waals materials thanks to their simplicity for theoretical modeling and easy access for material growth. Group VI element tellurium is an unintentionally p-type doped narrow bandgap semiconductor featuring a one-dimensio...

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Published inNPJ 2D materials and applications Vol. 6; no. 1; pp. 1 - 10
Main Authors Qiu, Gang, Charnas, Adam, Niu, Chang, Wang, Yixiu, Wu, Wenzhuo, Ye, Peide D.
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 14.03.2022
Nature Publishing Group
Nature Portfolio
Subjects
639/301/1005/1007
639/925/927/1007
Atomic properties
Atomic structure
Chemistry and Materials Science
CMOS
Crystal structure
Field effect transistors
Graphene
Materials Science
Molecular beam epitaxy
Nanotechnology
Nanowires
Optoelectronics
P-type semiconductors
Phase transitions
Physical properties
Piezoelectricity
Quantum transport
Review Article
Semiconductor devices
Surfaces and Interfaces
Tellurium
Thin Films
Transistors
Online AccessGet full text

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Abstract The graphene boom has triggered a widespread search for novel elemental van der Waals materials thanks to their simplicity for theoretical modeling and easy access for material growth. Group VI element tellurium is an unintentionally p-type doped narrow bandgap semiconductor featuring a one-dimensional chiral atomic structure which holds great promise for next-generation electronic, optoelectronic, and piezoelectric applications. In this paper, we first review recent progress in synthesizing atomically thin Te two-dimensional (2D) films and one-dimensional (1D) nanowires. Its applications in field-effect transistors and potential for building ultra-scaled Complementary metal–oxide–semiconductor (CMOS) circuits are discussed. We will also overview the recent study on its quantum transport in the 2D limit and progress in exploring its topological features and chiral-related physics. We envision that the breakthrough in obtaining high-quality 2D Te films will inspire a revisit of the fundamental properties of this long-forgotten material in the near future.
AbstractList Abstract The graphene boom has triggered a widespread search for novel elemental van der Waals materials thanks to their simplicity for theoretical modeling and easy access for material growth. Group VI element tellurium is an unintentionally p-type doped narrow bandgap semiconductor featuring a one-dimensional chiral atomic structure which holds great promise for next-generation electronic, optoelectronic, and piezoelectric applications. In this paper, we first review recent progress in synthesizing atomically thin Te two-dimensional (2D) films and one-dimensional (1D) nanowires. Its applications in field-effect transistors and potential for building ultra-scaled Complementary metal–oxide–semiconductor (CMOS) circuits are discussed. We will also overview the recent study on its quantum transport in the 2D limit and progress in exploring its topological features and chiral-related physics. We envision that the breakthrough in obtaining high-quality 2D Te films will inspire a revisit of the fundamental properties of this long-forgotten material in the near future.
The graphene boom has triggered a widespread search for novel elemental van der Waals materials thanks to their simplicity for theoretical modeling and easy access for material growth. Group VI element tellurium is an unintentionally p-type doped narrow bandgap semiconductor featuring a one-dimensional chiral atomic structure which holds great promise for next-generation electronic, optoelectronic, and piezoelectric applications. In this paper, we first review recent progress in synthesizing atomically thin Te two-dimensional (2D) films and one-dimensional (1D) nanowires. Its applications in field-effect transistors and potential for building ultra-scaled Complementary metal–oxide–semiconductor (CMOS) circuits are discussed. We will also overview the recent study on its quantum transport in the 2D limit and progress in exploring its topological features and chiral-related physics. We envision that the breakthrough in obtaining high-quality 2D Te films will inspire a revisit of the fundamental properties of this long-forgotten material in the near future.
ArticleNumber 17
Author Qiu, Gang
Charnas, Adam
Wu, Wenzhuo
Niu, Chang
Wang, Yixiu
Ye, Peide D.
Author_xml – sequence: 1
  givenname: Gang
  surname: Qiu
  fullname: Qiu, Gang
  organization: Elmore Family School of Electrical and Computer Engineering, Purdue University, Birck Nanotechnology Center, Purdue University
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  givenname: Adam
  orcidid: 0000-0002-2282-4428
  surname: Charnas
  fullname: Charnas, Adam
  organization: Elmore Family School of Electrical and Computer Engineering, Purdue University, Birck Nanotechnology Center, Purdue University
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  givenname: Chang
  orcidid: 0000-0003-3175-7164
  surname: Niu
  fullname: Niu, Chang
  organization: Elmore Family School of Electrical and Computer Engineering, Purdue University, Birck Nanotechnology Center, Purdue University
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  givenname: Yixiu
  surname: Wang
  fullname: Wang, Yixiu
  organization: School of Industrial Engineering, Purdue University
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  givenname: Wenzhuo
  surname: Wu
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  organization: School of Industrial Engineering, Purdue University
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  givenname: Peide D.
  orcidid: 0000-0001-8466-9745
  surname: Ye
  fullname: Ye, Peide D.
  email: yep@purdue.edu
  organization: Elmore Family School of Electrical and Computer Engineering, Purdue University, Birck Nanotechnology Center, Purdue University
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Snippet The graphene boom has triggered a widespread search for novel elemental van der Waals materials thanks to their simplicity for theoretical modeling and easy...
Abstract The graphene boom has triggered a widespread search for novel elemental van der Waals materials thanks to their simplicity for theoretical modeling...
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SubjectTerms 639/301/1005/1007
639/925/927/1007
Atomic properties
Atomic structure
Chemistry and Materials Science
CMOS
Crystal structure
Field effect transistors
Graphene
Materials Science
Molecular beam epitaxy
Nanotechnology
Nanowires
Optoelectronics
P-type semiconductors
Phase transitions
Physical properties
Piezoelectricity
Quantum transport
Review Article
Semiconductor devices
Surfaces and Interfaces
Tellurium
Thin Films
Transistors
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Title The resurrection of tellurium as an elemental two-dimensional semiconductor
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