Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate

• Published in: NPJ 2D materials and applications Vol. 6; no. 1; pp. 1 - 7
• Main Authors: Anzi, Luca, Tuktamyshev, Artur, Fedorov, Alexey, Zurutuza, Amaia, Sanguinetti, Stefano, Sordan, Roman
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 21.04.2022; Nature Publishing Group; Nature Portfolio
• Subjects: 639/925/918/1052; 639/925/927/1007; Chemistry and Materials Science; Depletion; Field effect transistors; Graphene; Logic circuits; Materials Science; Mixers; Nanotechnology; Semiconductor devices; Surfaces and Interfaces; Switching; Thin Films; Threshold voltage; Transistors; Work functions

The threshold voltage of a field-effect transistor (FET) determines its switching and limits the scaling of the supply voltage in the logic gates. Here we demonstrate a GaAs FET with a monolayer graphene gate in which the threshold voltage was externally controlled by an additional control gate. The...