Thermal management strategies for gallium oxide vertical trench-fin MOSFETs
Trench-fin MOSFETs, with their near-surface heat generation and the higher-surface area afforded by their geometry for thermal management, represent a promising solution to the thermal problems frequently encountered in lateral β-Ga2O3 devices. Here, we investigate potential thermal-management strat...
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| Published in | Journal of applied physics Vol. 129; no. 8 |
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| Main Authors | , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Melville
American Institute of Physics
28.02.2021
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| Abstract | Trench-fin MOSFETs, with their near-surface heat generation and the higher-surface area afforded by their geometry for thermal management, represent a promising solution to the thermal problems frequently encountered in lateral β-Ga2O3 devices. Here, we investigate potential thermal-management strategies for a vertical β-Ga2O3 trench-fin MOSFET through parametric analysis, offering recommendations on how best to design a device for maximal current density and excellent thermal performance. Primarily, by using a thermally conductive dielectric over the MOSFET structure, significant improvements to device power density may be achieved, aided by thermal spreading. Additionally, we find that by bonding thermal spreaders to its topside can yield significant improvements in thermal performance. |
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| AbstractList | Trench-fin MOSFETs, with their near-surface heat generation and the higher-surface area afforded by their geometry for thermal management, represent a promising solution to the thermal problems frequently encountered in lateral β-Ga2O3 devices. Here, we investigate potential thermal-management strategies for a vertical β-Ga2O3 trench-fin MOSFET through parametric analysis, offering recommendations on how best to design a device for maximal current density and excellent thermal performance. Primarily, by using a thermally conductive dielectric over the MOSFET structure, significant improvements to device power density may be achieved, aided by thermal spreading. Additionally, we find that by bonding thermal spreaders to its topside can yield significant improvements in thermal performance. |
| Author | Shi, Jingjing Speck, James Montgomery, Robert H. Itoh, Takeki Yuan, Chao Zhang, Yuewei Kim, Samuel Kumar, Satish Graham, Samuel Mauze, Akhil |
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| SubjectTerms | Applied physics Gallium oxides Heat generation MOSFETs Parametric analysis Spreaders Thermal management |
| Title | Thermal management strategies for gallium oxide vertical trench-fin MOSFETs |
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