Rhenium-doped MoS2 films

• Published in: Applied physics letters Vol. 111; no. 20
• Main Authors: Hallam, Toby, Monaghan, Scott, Gity, Farzan, Ansari, Lida, Schmidt, Michael, Downing, Clive, Cullen, Conor P., Nicolosi, Valeria, Hurley, Paul K., Duesberg, Georg S.
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 13.11.2017
• Subjects: Applied physics; Density functional theory; Doping; Electrical properties; Electronic devices; Energy dispersive X ray spectroscopy; Energy transmission; Hall effect; Lattice sites; Lattice vacancies; Molybdenum disulfide; Rhenium; Scanning electron microscopy; Scanning transmission electron microscopy; Transmission electron microscopy

Tailoring the electrical properties of transition metal dichalcogenides by doping is one of the biggest challenges for the application of 2D materials in future electronic devices. Here, we report on a straightforward approach to the n-type doping of molybdenum disulfide (MoS2) films with rhenium (R...