Rhenium-doped MoS2 films
Tailoring the electrical properties of transition metal dichalcogenides by doping is one of the biggest challenges for the application of 2D materials in future electronic devices. Here, we report on a straightforward approach to the n-type doping of molybdenum disulfide (MoS2) films with rhenium (R...
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| Published in | Applied physics letters Vol. 111; no. 20 |
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| Main Authors | , , , , , , , , , |
| Format | Journal Article |
| Language | English |
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American Institute of Physics
13.11.2017
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| Abstract | Tailoring the electrical properties of transition metal dichalcogenides by doping is one of the biggest challenges for the application of 2D materials in future electronic devices. Here, we report on a straightforward approach to the n-type doping of molybdenum disulfide (MoS2) films with rhenium (Re). High-Resolution Scanning Transmission Electron Microscopy and Energy-Dispersive X-ray spectroscopy are used to identify Re in interstitial and lattice sites of the MoS2 structure. Hall-effect measurements confirm the electron donating influence of Re in MoS2, while the nominally undoped films exhibit a net p-type doping. Density functional theory (DFT) modelling indicates that Re on Mo sites is the origin of the n-type doping, whereas S-vacancies have a p-type nature, providing an explanation for the p-type behaviour of nominally undoped MoS2 films. |
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| AbstractList | Tailoring the electrical properties of transition metal dichalcogenides by doping is one of the biggest challenges for the application of 2D materials in future electronic devices. Here, we report on a straightforward approach to the n-type doping of molybdenum disulfide (MoS2) films with rhenium (Re). High-Resolution Scanning Transmission Electron Microscopy and Energy-Dispersive X-ray spectroscopy are used to identify Re in interstitial and lattice sites of the MoS2 structure. Hall-effect measurements confirm the electron donating influence of Re in MoS2, while the nominally undoped films exhibit a net p-type doping. Density functional theory (DFT) modelling indicates that Re on Mo sites is the origin of the n-type doping, whereas S-vacancies have a p-type nature, providing an explanation for the p-type behaviour of nominally undoped MoS2 films. |
| Author | Monaghan, Scott Schmidt, Michael Cullen, Conor P. Gity, Farzan Hallam, Toby Downing, Clive Nicolosi, Valeria Ansari, Lida Duesberg, Georg S. Hurley, Paul K. |
| Author_xml | – sequence: 1 givenname: Toby surname: Hallam fullname: Hallam, Toby organization: 5 Universität der Bundeswehr München, 85577 Neubiberg, Germany – sequence: 2 givenname: Scott surname: Monaghan fullname: Monaghan, Scott organization: Tyndall National Institute, and the Department of Chemistry, University College Cork – sequence: 3 givenname: Farzan surname: Gity fullname: Gity, Farzan organization: Tyndall National Institute, and the Department of Chemistry, University College Cork – sequence: 4 givenname: Lida surname: Ansari fullname: Ansari, Lida organization: Tyndall National Institute, and the Department of Chemistry, University College Cork – sequence: 5 givenname: Michael surname: Schmidt fullname: Schmidt, Michael organization: Tyndall National Institute, and the Department of Chemistry, University College Cork – sequence: 6 givenname: Clive surname: Downing fullname: Downing, Clive organization: CRANN/AMBER, Trinity College Dublin – sequence: 7 givenname: Conor P. surname: Cullen fullname: Cullen, Conor P. organization: 5 Universität der Bundeswehr München, 85577 Neubiberg, Germany – sequence: 8 givenname: Valeria surname: Nicolosi fullname: Nicolosi, Valeria organization: 5 Universität der Bundeswehr München, 85577 Neubiberg, Germany – sequence: 9 givenname: Paul K. surname: Hurley fullname: Hurley, Paul K. organization: Tyndall National Institute, and the Department of Chemistry, University College Cork – sequence: 10 givenname: Georg S. surname: Duesberg fullname: Duesberg, Georg S. organization: 5 Universität der Bundeswehr München, 85577 Neubiberg, Germany |
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| SubjectTerms | Applied physics Density functional theory Doping Electrical properties Electronic devices Energy dispersive X ray spectroscopy Energy transmission Hall effect Lattice sites Lattice vacancies Molybdenum disulfide Rhenium Scanning electron microscopy Scanning transmission electron microscopy Transmission electron microscopy |
| Title | Rhenium-doped MoS2 films |
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