Rhenium-doped MoS2 films

• Published in: Applied physics letters Vol. 111; no. 20
• Main Authors: Hallam, Toby, Monaghan, Scott, Gity, Farzan, Ansari, Lida, Schmidt, Michael, Downing, Clive, Cullen, Conor P., Nicolosi, Valeria, Hurley, Paul K., Duesberg, Georg S.
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 13.11.2017
• Subjects: Applied physics; Density functional theory; Doping; Electrical properties; Electronic devices; Energy dispersive X ray spectroscopy; Energy transmission; Hall effect; Lattice sites; Lattice vacancies; Molybdenum disulfide; Rhenium; Scanning electron microscopy; Scanning transmission electron microscopy; Transmission electron microscopy
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4995220

Tailoring the electrical properties of transition metal dichalcogenides by doping is one of the biggest challenges for the application of 2D materials in future electronic devices. Here, we report on a straightforward approach to the n-type doping of molybdenum disulfide (MoS2) films with rhenium (Re). High-Resolution Scanning Transmission Electron Microscopy and Energy-Dispersive X-ray spectroscopy are used to identify Re in interstitial and lattice sites of the MoS2 structure. Hall-effect measurements confirm the electron donating influence of Re in MoS2, while the nominally undoped films exhibit a net p-type doping. Density functional theory (DFT) modelling indicates that Re on Mo sites is the origin of the n-type doping, whereas S-vacancies have a p-type nature, providing an explanation for the p-type behaviour of nominally undoped MoS2 films.