Engineering of defects in resistive random access memory devices

• Published in: Journal of applied physics Vol. 127; no. 5
• Main Authors: Banerjee, Writam, Liu, Qi, Hwang, Hyunsang
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 07.02.2020
• Subjects: Access control; Applied physics; Defects; Design defects; Memory devices; Nanocrystals; Random access memory; Switching

Defects are essential to switch the resistance states in resistive random-access memory (RRAM) devices. Controlled defects in such devices can lead to the stabilization of the switching performance, which is useful for high-density memory and neuromorphic computing applications. In contrast, uncontr...