Enhancement of gas sensing by implantation of Sb-ions in SnO2 nanowires
•For gas sensing studies, we synthesized Sb-implanted SnO2 NWs at different doses.•Sensor response was enhanced by Sb-implantation, where the lowest dose showed the best performance.•Involved mechanisms are explained by doping-induced change of electron concentration and generation of surface defect...
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Published in | Sensors and actuators. B, Chemical Vol. 304; p. 127307 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
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Elsevier B.V
01.02.2020
Elsevier Science Ltd |
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Abstract | •For gas sensing studies, we synthesized Sb-implanted SnO2 NWs at different doses.•Sensor response was enhanced by Sb-implantation, where the lowest dose showed the best performance.•Involved mechanisms are explained by doping-induced change of electron concentration and generation of surface defects.
We describe gas sensing improvements of SnO2 nanowire (NW) gas sensors by Sb-ion implantation. SnO2 NWs were grown through a vapor-liquid-solid growth technique and Sb-ion implantation was performed by an ion implanter at different doses of 2 × 1013, 2 × 1014, and 2 × 1015 ion/cm2. The morphology and chemical compositions were confirmed by different characterization techniques. Gas sensing results demonstrated the gas sensing improvement by Sb-implantation, where the lowest dose gas sensor showed the best performance towards tested gases. However, high doses led to a reduced sensing response. We suggested the related sensing mechanism based not only on change of electron concentration by substituting Sn4+ ions to Sb+5 ions, but also on generation of surface defects. This study can open new possibilities to use ion-implantation as promising way to enhance the sensing capability of different gas sensors. |
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AbstractList | •For gas sensing studies, we synthesized Sb-implanted SnO2 NWs at different doses.•Sensor response was enhanced by Sb-implantation, where the lowest dose showed the best performance.•Involved mechanisms are explained by doping-induced change of electron concentration and generation of surface defects.
We describe gas sensing improvements of SnO2 nanowire (NW) gas sensors by Sb-ion implantation. SnO2 NWs were grown through a vapor-liquid-solid growth technique and Sb-ion implantation was performed by an ion implanter at different doses of 2 × 1013, 2 × 1014, and 2 × 1015 ion/cm2. The morphology and chemical compositions were confirmed by different characterization techniques. Gas sensing results demonstrated the gas sensing improvement by Sb-implantation, where the lowest dose gas sensor showed the best performance towards tested gases. However, high doses led to a reduced sensing response. We suggested the related sensing mechanism based not only on change of electron concentration by substituting Sn4+ ions to Sb+5 ions, but also on generation of surface defects. This study can open new possibilities to use ion-implantation as promising way to enhance the sensing capability of different gas sensors. We describe gas sensing improvements of SnO2 nanowire (NW) gas sensors by Sb-ion implantation. SnO2 NWs were grown through a vapor-liquid-solid growth technique and Sb-ion implantation was performed by an ion implanter at different doses of 2 × 1013, 2 × 1014, and 2 × 1015 ion/cm2. The morphology and chemical compositions were confirmed by different characterization techniques. Gas sensing results demonstrated the gas sensing improvement by Sb-implantation, where the lowest dose gas sensor showed the best performance towards tested gases. However, high doses led to a reduced sensing response. We suggested the related sensing mechanism based not only on change of electron concentration by substituting Sn4+ ions to Sb+5 ions, but also on generation of surface defects. This study can open new possibilities to use ion-implantation as promising way to enhance the sensing capability of different gas sensors. |
ArticleNumber | 127307 |
Author | Kim, Jae-Hun Hishita, Shunich Kim, Sang Sub Mirzaei, Ali Kim, Hyoun Woo Lee, Jae-Hyoung Kim, Jin-Young |
Author_xml | – sequence: 1 givenname: Jae-Hun surname: Kim fullname: Kim, Jae-Hun organization: Department of Materials Science and Engineering, Inha University, Incheon 22212, Republic of Korea – sequence: 2 givenname: Ali surname: Mirzaei fullname: Mirzaei, Ali organization: The Research Institute of Industrial Science, Hanyang University, Seoul 04763, Republic of Korea – sequence: 3 givenname: Jin-Young surname: Kim fullname: Kim, Jin-Young organization: Department of Materials Science and Engineering, Inha University, Incheon 22212, Republic of Korea – sequence: 4 givenname: Jae-Hyoung surname: Lee fullname: Lee, Jae-Hyoung organization: Department of Materials Science and Engineering, Inha University, Incheon 22212, Republic of Korea – sequence: 5 givenname: Hyoun Woo surname: Kim fullname: Kim, Hyoun Woo email: hyounwoo@hanyang.ac.kr organization: The Research Institute of Industrial Science, Hanyang University, Seoul 04763, Republic of Korea – sequence: 6 givenname: Shunich surname: Hishita fullname: Hishita, Shunich organization: National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan – sequence: 7 givenname: Sang Sub surname: Kim fullname: Kim, Sang Sub email: sangsub@inha.ac.kr organization: Department of Materials Science and Engineering, Inha University, Incheon 22212, Republic of Korea |
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Snippet | •For gas sensing studies, we synthesized Sb-implanted SnO2 NWs at different doses.•Sensor response was enhanced by Sb-implantation, where the lowest dose... We describe gas sensing improvements of SnO2 nanowire (NW) gas sensors by Sb-ion implantation. SnO2 NWs were grown through a vapor-liquid-solid growth... |
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SubjectTerms | Chemical composition Detection Gas sensor Gas sensors Gases Ion implantation Morphology Nanowires NO2 Organic chemistry Sb-implantation Sensing mechanism Sensors SnO2 nanowire Surface defects Tin dioxide |
Title | Enhancement of gas sensing by implantation of Sb-ions in SnO2 nanowires |
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