Enhancement of gas sensing by implantation of Sb-ions in SnO2 nanowires

•For gas sensing studies, we synthesized Sb-implanted SnO2 NWs at different doses.•Sensor response was enhanced by Sb-implantation, where the lowest dose showed the best performance.•Involved mechanisms are explained by doping-induced change of electron concentration and generation of surface defect...

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Published inSensors and actuators. B, Chemical Vol. 304; p. 127307
Main Authors Kim, Jae-Hun, Mirzaei, Ali, Kim, Jin-Young, Lee, Jae-Hyoung, Kim, Hyoun Woo, Hishita, Shunich, Kim, Sang Sub
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 01.02.2020
Elsevier Science Ltd
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Abstract •For gas sensing studies, we synthesized Sb-implanted SnO2 NWs at different doses.•Sensor response was enhanced by Sb-implantation, where the lowest dose showed the best performance.•Involved mechanisms are explained by doping-induced change of electron concentration and generation of surface defects. We describe gas sensing improvements of SnO2 nanowire (NW) gas sensors by Sb-ion implantation. SnO2 NWs were grown through a vapor-liquid-solid growth technique and Sb-ion implantation was performed by an ion implanter at different doses of 2 × 1013, 2 × 1014, and 2 × 1015 ion/cm2. The morphology and chemical compositions were confirmed by different characterization techniques. Gas sensing results demonstrated the gas sensing improvement by Sb-implantation, where the lowest dose gas sensor showed the best performance towards tested gases. However, high doses led to a reduced sensing response. We suggested the related sensing mechanism based not only on change of electron concentration by substituting Sn4+ ions to Sb+5 ions, but also on generation of surface defects. This study can open new possibilities to use ion-implantation as promising way to enhance the sensing capability of different gas sensors.
AbstractList •For gas sensing studies, we synthesized Sb-implanted SnO2 NWs at different doses.•Sensor response was enhanced by Sb-implantation, where the lowest dose showed the best performance.•Involved mechanisms are explained by doping-induced change of electron concentration and generation of surface defects. We describe gas sensing improvements of SnO2 nanowire (NW) gas sensors by Sb-ion implantation. SnO2 NWs were grown through a vapor-liquid-solid growth technique and Sb-ion implantation was performed by an ion implanter at different doses of 2 × 1013, 2 × 1014, and 2 × 1015 ion/cm2. The morphology and chemical compositions were confirmed by different characterization techniques. Gas sensing results demonstrated the gas sensing improvement by Sb-implantation, where the lowest dose gas sensor showed the best performance towards tested gases. However, high doses led to a reduced sensing response. We suggested the related sensing mechanism based not only on change of electron concentration by substituting Sn4+ ions to Sb+5 ions, but also on generation of surface defects. This study can open new possibilities to use ion-implantation as promising way to enhance the sensing capability of different gas sensors.
We describe gas sensing improvements of SnO2 nanowire (NW) gas sensors by Sb-ion implantation. SnO2 NWs were grown through a vapor-liquid-solid growth technique and Sb-ion implantation was performed by an ion implanter at different doses of 2 × 1013, 2 × 1014, and 2 × 1015 ion/cm2. The morphology and chemical compositions were confirmed by different characterization techniques. Gas sensing results demonstrated the gas sensing improvement by Sb-implantation, where the lowest dose gas sensor showed the best performance towards tested gases. However, high doses led to a reduced sensing response. We suggested the related sensing mechanism based not only on change of electron concentration by substituting Sn4+ ions to Sb+5 ions, but also on generation of surface defects. This study can open new possibilities to use ion-implantation as promising way to enhance the sensing capability of different gas sensors.
ArticleNumber 127307
Author Kim, Jae-Hun
Hishita, Shunich
Kim, Sang Sub
Mirzaei, Ali
Kim, Hyoun Woo
Lee, Jae-Hyoung
Kim, Jin-Young
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  fullname: Kim, Jae-Hun
  organization: Department of Materials Science and Engineering, Inha University, Incheon 22212, Republic of Korea
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  givenname: Ali
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  fullname: Mirzaei, Ali
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  givenname: Jin-Young
  surname: Kim
  fullname: Kim, Jin-Young
  organization: Department of Materials Science and Engineering, Inha University, Incheon 22212, Republic of Korea
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  givenname: Hyoun Woo
  surname: Kim
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  fullname: Hishita, Shunich
  organization: National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
– sequence: 7
  givenname: Sang Sub
  surname: Kim
  fullname: Kim, Sang Sub
  email: sangsub@inha.ac.kr
  organization: Department of Materials Science and Engineering, Inha University, Incheon 22212, Republic of Korea
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Keywords NO2
Sb-implantation
Gas sensor
SnO2 nanowire
Sensing mechanism
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SSID ssj0004360
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Snippet •For gas sensing studies, we synthesized Sb-implanted SnO2 NWs at different doses.•Sensor response was enhanced by Sb-implantation, where the lowest dose...
We describe gas sensing improvements of SnO2 nanowire (NW) gas sensors by Sb-ion implantation. SnO2 NWs were grown through a vapor-liquid-solid growth...
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StartPage 127307
SubjectTerms Chemical composition
Detection
Gas sensor
Gas sensors
Gases
Ion implantation
Morphology
Nanowires
NO2
Organic chemistry
Sb-implantation
Sensing mechanism
Sensors
SnO2 nanowire
Surface defects
Tin dioxide
Title Enhancement of gas sensing by implantation of Sb-ions in SnO2 nanowires
URI https://dx.doi.org/10.1016/j.snb.2019.127307
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Volume 304
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