Capacitance-voltage spectroscopy and analysis of dielectric intrinsic amorphous silicon thin films

• Published in: Physica status solidi. C Vol. 13; no. 10-12; pp. 724 - 728
• Main Authors: Gerke, Sebastian, Micard, Gabriel, Job, Reinhart, Hahn, Giso, Terheiden, Barbara
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.12.2016; WILEY‐VCH Verlag; Wiley Subscription Services, Inc
• Subjects: Amorphous silicon; amorphous silicon (a-Si); capacitance-voltage (CV) spectroscopy; dangling bonds; Degradation; Design analysis; Electric fields; Mathematical analysis; Oxides; Spectroscopy; Thin films

Capacitance‐voltage (CV) spectroscopy of classic metal‐insulator‐semiconductors (MIS) using insulating oxides as well as highly passivating intrinsic and hydrogenated amorphous silicon ((i) a‐Si:H) has been discussed extensively in literature, particularly with regard to photovoltaic applications. I...