Selective high resistivity region formation by a Ni catalyst on GaN light-emitting diodes

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Bibliographic Details
Published inSemiconductor science and technology Vol. 23; no. 2; p. 025012
Main Authors Wang, Chien-Chun, Jenq, Feng-Lin, Liu, Chien-Chih, Hung, Chen-I, Wang, Yeong-Her, Houng, Mau-Phon
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.02.2008
Institute of Physics
Subjects
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Binary compound
Hole density
Active layer
Blocking layer
Optoelectronic device
Doped materials
Gallium nitride
Optical absorption
Thin film
Light emitting diode
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/23/2/025012