Evolution and prevention of meltback etching: Case study of semipolar GaN growth on patterned silicon substrates
Meltback etching, a deteriorating chemical reaction occurring between gallium and silicon under typical metal organic chemical vapor deposition growth conditions, is a common problem that often limits the development of GaN on silicon substrates, in particular, patterned substrates, and therefore mu...
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Published in | Journal of applied physics Vol. 122; no. 10 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
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American Institute of Physics
14.09.2017
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Abstract | Meltback etching, a deteriorating chemical reaction occurring between gallium and silicon under typical metal organic chemical vapor deposition growth conditions, is a common problem that often limits the development of GaN on silicon substrates, in particular, patterned substrates, and therefore must be circumvented. To further understand this reaction, energy dispersive X-ray spectroscopy was performed in cross-section, and a proposed 2-dimensional model on how meltback etching evolves throughout the growth process is discussed, which indicated an inter-diffusion reaction occurring primarily between gallium and silicon where gallium from GaN diffuses into the silicon substrate while silicon from the substrate diffuses out and incorporates into the GaN crystal. Moreover, we demonstrate an anisotropic behavior of the gallium penetrating the silicon substrate, which has shown to be delimited by the Si
{
111
}
planes. Finally, an approach to prevent meltback etching by changing the fractions of nitrogen and hydrogen in the carrier gas is presented and discussed. |
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AbstractList | Meltback etching, a deteriorating chemical reaction occurring between gallium and silicon under typical metal organic chemical vapor deposition growth conditions, is a common problem that often limits the development of GaN on silicon substrates, in particular, patterned substrates, and therefore must be circumvented. To further understand this reaction, energy dispersive X-ray spectroscopy was performed in cross-section, and a proposed 2-dimensional model on how meltback etching evolves throughout the growth process is discussed, which indicated an inter-diffusion reaction occurring primarily between gallium and silicon where gallium from GaN diffuses into the silicon substrate while silicon from the substrate diffuses out and incorporates into the GaN crystal. Moreover, we demonstrate an anisotropic behavior of the gallium penetrating the silicon substrate, which has shown to be delimited by the Si {111} planes. Finally, an approach to prevent meltback etching by changing the fractions of nitrogen and hydrogen in the carrier gas is presented and discussed. Meltback etching, a deteriorating chemical reaction occurring between gallium and silicon under typical metal organic chemical vapor deposition growth conditions, is a common problem that often limits the development of GaN on silicon substrates, in particular, patterned substrates, and therefore must be circumvented. To further understand this reaction, energy dispersive X-ray spectroscopy was performed in cross-section, and a proposed 2-dimensional model on how meltback etching evolves throughout the growth process is discussed, which indicated an inter-diffusion reaction occurring primarily between gallium and silicon where gallium from GaN diffuses into the silicon substrate while silicon from the substrate diffuses out and incorporates into the GaN crystal. Moreover, we demonstrate an anisotropic behavior of the gallium penetrating the silicon substrate, which has shown to be delimited by the Si { 111 } planes. Finally, an approach to prevent meltback etching by changing the fractions of nitrogen and hydrogen in the carrier gas is presented and discussed. |
Author | Khoury, Michel Vennéguès, Philippe Feuillet, Guy Zúñiga-Pérez, Jesus Tottereau, Olivier |
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Cites_doi | 10.1180/minmag.1987.051.359.02 10.1016/j.jcrysgro.2014.07.045 10.1016/S0022-0248(98)00223-1 10.1088/0022-3727/49/47/475104 10.1016/j.vacuum.2011.07.002 10.1209/0295-5075/94/16001 10.1016/S0921-5107(02)00043-0 10.1016/j.jcrysgro.2012.08.048 10.1016/j.mineng.2003.08.003 10.1143/JJAP.45.L478 10.1016/0924-4247(92)80139-T 10.1143/JJAP.38.L492 10.1063/1.1563727 10.1002/pssb.201451591 10.1063/1.1708191 10.1111/j.1365-2818.1975.tb03895.x 10.1088/0957-4484/26/31/315601 10.1021/ja017284n 10.1021/nl062871y 10.1016/j.jcrysgro.2010.10.036 10.1016/j.jcrysgro.2008.09.097 10.1063/1.1401089 10.1016/j.jcrysgro.2015.02.098 10.1016/j.jcrysgro.2010.09.062 10.1149/1.2086277 10.1116/1.576025 |
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References | Ishikawa, Shimanaka (c12) 2011 Detz, Kriz, MacFarland, Lancaster, Zederbauer, Capriotti, Andrews, Schrenk, Strasser (c13) 2015 Khoury, Vennéguès, Leroux, Delaye, Feuillet, Zúñiga-Pérez (c16) 2016 Knoll, Zuleeg (c9) 1966 Ishikawa, Yamamoto, Egawa, Soga, Jimbo, Umeno (c3) 1998 Tabata, Asahi, Funabashi, Shimaoka, Sugiyama (c29) 1992 Pan, Dai, Ma, Wang (c25) 2002 Volz, Beyer, Witte, Ohlmann, Nemeth, Kunert, Stolz (c5) 2011 Seidel, Csepregi, Heuberger, Baumgärtel (c30) 1990 Khoury, Leroux, Nemoz, Feuillet, Zúñiga-Pérez, Vennéguès (c14) 2015 Li, Fei, Chen, Zhang, Zheng, Liu, Zhang (c26) 2011 Jacobs, Ayres, Petkov, Halpern, He, Baczewski, McElroy, Crimp, Zhang, Shaw (c19) 2007 Werner, Beyer, Oelerich, Baranovskii, Stolz, Volz (c27) 2014 Lloyd (c17) 1987 Bartelt, Williams, Phaneuf, Yang, Sarma (c28) 1989 Yamane, Kobayashi, Furukawa, Okada, Yonezu, Wakahara (c4) 2009 Krost, Dadgar (c1) 2002 Takemoto, Murakami, Iwamoto, Matsuo, Kangawa, Kumagai, Koukitu (c11) 2006 Ishikawa, Zhao, Nakada, Egawa, Jimbo, Umeno (c2) 1999 Gautier, Moudakir, Patriarche, Rogers, Sandana, Teherani, Bove, El Gmili, Pantzas, Sundaram (c21) 2013 Olesinski, Kanani, Abbaschian (c6) 1985 Zou, Zhang, Xie, Shao, Guo, Fu (c20) 2011 Pan, Dai, Beach, Evans, Lowndes (c8) 2003 Pristovsek, Han, Zhu, Frentrup, Kappers, Humphreys, Kozlowski, Maaskant, Corbett (c15) 2015 Moskalyk (c7) 2003 Sunkara, Sharma, Miranda, Lian, Dickey (c10) 2001 Cliff, Lorimer (c23) 1975 (2023070321482750500_c14) 2015; 419 (2023070321482750500_c19) 2007; 7 (2023070321482750500_c5) 2011; 315 (2023070321482750500_c12) 2011; 315 (2023070321482750500_c10) 2001; 79 (2023070321482750500_c27) 2014; 405 (2023070321482750500_c8) 2003; 82 (2023070321482750500_c29) 1992; 34 (2023070321482750500_c11) 2006; 45 (2023070321482750500_c3) 1998; 189–190 (2023070321482750500_c17) 1987; 51 (2023070321482750500_c1) 2002; 93 (2023070321482750500_c7) 2003; 16 (2023070321482750500_c9) 1966; 37 (2023070321482750500_c28) 1989; 7 (2023070321482750500_c24) 2006 (2023070321482750500_c23) 1975; 103 (2023070321482750500_c2) 1999; 38 (2023070321482750500_c25) 2002; 124 (2023070321482750500_c20) 2011; 86 (2023070321482750500_c16) 2016; 49 (2023070321482750500_c13) 2015; 26 (2023070321482750500_c15) 2015; 252 (2023070321482750500_c6) 1985; 6 (2023070321482750500_c26) 2011; 94 (2023070321482750500_c4) 2009; 311 (2023070321482750500_c18) 2004 (2023070321482750500_c21) 2013; 370 2023070321482750500_c22 (2023070321482750500_c30) 1990; 137 |
References_xml | – volume: start-page: 37 year: 2011 ident: c5 publication-title: J. Cryst. Growth contributor: fullname: Stolz – volume: start-page: 3612 year: 1990 ident: c30 publication-title: J. Electrochem. Soc. contributor: fullname: Baumgärtel – volume: start-page: 1435 year: 2007 ident: c19 publication-title: Nano Lett. contributor: fullname: Shaw – volume: start-page: 63 year: 2013 ident: c21 publication-title: J. Cryst. Growth contributor: fullname: Sundaram – volume: start-page: L478 year: 2006 ident: c11 publication-title: Jpn. J. Appl. Phys., Part 2 contributor: fullname: Koukitu – volume: start-page: 362 year: 1985 ident: c6 publication-title: J. Phase Equilibr. contributor: fullname: Abbaschian – volume: start-page: 88 year: 2015 ident: c14 publication-title: J. Cryst. Growth contributor: fullname: Vennéguès – volume: start-page: 280 year: 2011 ident: c20 publication-title: Vacuum contributor: fullname: Fu – volume: start-page: 77 year: 2002 ident: c1 publication-title: Mater. Sci. Eng. B contributor: fullname: Dadgar – volume: start-page: 1546 year: 2001 ident: c10 publication-title: Appl. Phys. Lett. contributor: fullname: Dickey – volume: start-page: 102 year: 2014 ident: c27 publication-title: J. Cryst. Growth contributor: fullname: Volz – volume: start-page: 3 year: 1987 ident: c17 publication-title: Mineral. Mag. contributor: fullname: Lloyd – volume: start-page: L492 year: 1999 ident: c2 publication-title: Jpn. J. Appl. Phys., Part 2 contributor: fullname: Umeno – volume: start-page: 1947 year: 2003 ident: c8 publication-title: Appl. Phys. Lett. contributor: fullname: Lowndes – volume: start-page: 196 year: 2011 ident: c12 publication-title: J. Cryst. Growth contributor: fullname: Shimanaka – volume: start-page: 794 year: 2009 ident: c4 publication-title: J. Cryst. Growth contributor: fullname: Wakahara – volume: start-page: 16001 year: 2011 ident: c26 publication-title: Europhys. Lett. contributor: fullname: Zhang – volume: start-page: 203 year: 1975 ident: c23 publication-title: J. Microsc. contributor: fullname: Lorimer – volume: start-page: 1817 year: 2002 ident: c25 publication-title: J. Am. Chem. Soc. contributor: fullname: Wang – volume: start-page: 1898 year: 1989 ident: c28 publication-title: J. Vacuum Sci. Technol. A contributor: fullname: Sarma – volume: start-page: 315601 year: 2015 ident: c13 publication-title: Nanotechnology contributor: fullname: Strasser – volume: start-page: 51 year: 1992 ident: c29 publication-title: Sens. Actuators, A contributor: fullname: Sugiyama – volume: start-page: 178 year: 1998 ident: c3 publication-title: J. Cryst. Growth contributor: fullname: Umeno – volume: start-page: 475104 year: 2016 ident: c16 publication-title: J. Phys. D: Appl. Phys. contributor: fullname: Zúñiga-Pérez – volume: start-page: 5006 year: 1966 ident: c9 publication-title: J. Appl. Phys. contributor: fullname: Zuleeg – volume: start-page: 921 year: 2003 ident: c7 publication-title: Miner. Eng. contributor: fullname: Moskalyk – volume: start-page: 1104 year: 2015 ident: c15 publication-title: Phys. Status Solidi B contributor: fullname: Corbett – volume: 51 start-page: 3 year: 1987 ident: 2023070321482750500_c17 publication-title: Mineral. Mag. doi: 10.1180/minmag.1987.051.359.02 – volume-title: CRC Handbook of Chemistry and Physics year: 2004 ident: 2023070321482750500_c18 – volume: 405 start-page: 102 year: 2014 ident: 2023070321482750500_c27 publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2014.07.045 – year: 2006 ident: 2023070321482750500_c24 – volume: 189–190 start-page: 178 year: 1998 ident: 2023070321482750500_c3 publication-title: J. Cryst. Growth doi: 10.1016/S0022-0248(98)00223-1 – volume: 49 start-page: 475104 year: 2016 ident: 2023070321482750500_c16 publication-title: J. Phys. D: Appl. Phys. doi: 10.1088/0022-3727/49/47/475104 – volume: 86 start-page: 280 year: 2011 ident: 2023070321482750500_c20 publication-title: Vacuum doi: 10.1016/j.vacuum.2011.07.002 – volume: 94 start-page: 16001 year: 2011 ident: 2023070321482750500_c26 publication-title: Europhys. Lett. doi: 10.1209/0295-5075/94/16001 – volume: 93 start-page: 77 year: 2002 ident: 2023070321482750500_c1 publication-title: Mater. Sci. Eng. B doi: 10.1016/S0921-5107(02)00043-0 – volume: 370 start-page: 63 year: 2013 ident: 2023070321482750500_c21 publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2012.08.048 – volume: 16 start-page: 921 year: 2003 ident: 2023070321482750500_c7 publication-title: Miner. Eng. doi: 10.1016/j.mineng.2003.08.003 – volume: 45 start-page: L478 year: 2006 ident: 2023070321482750500_c11 publication-title: Jpn. J. Appl. Phys., Part 2 doi: 10.1143/JJAP.45.L478 – volume: 34 start-page: 51 year: 1992 ident: 2023070321482750500_c29 publication-title: Sens. Actuators, A doi: 10.1016/0924-4247(92)80139-T – volume: 38 start-page: L492 year: 1999 ident: 2023070321482750500_c2 publication-title: Jpn. J. Appl. Phys., Part 2 doi: 10.1143/JJAP.38.L492 – ident: 2023070321482750500_c22 – volume: 82 start-page: 1947 year: 2003 ident: 2023070321482750500_c8 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1563727 – volume: 252 start-page: 1104 year: 2015 ident: 2023070321482750500_c15 publication-title: Phys. Status Solidi B doi: 10.1002/pssb.201451591 – volume: 37 start-page: 5006 year: 1966 ident: 2023070321482750500_c9 publication-title: J. Appl. Phys. doi: 10.1063/1.1708191 – volume: 103 start-page: 203 year: 1975 ident: 2023070321482750500_c23 publication-title: J. Microsc. doi: 10.1111/j.1365-2818.1975.tb03895.x – volume: 26 start-page: 315601 year: 2015 ident: 2023070321482750500_c13 publication-title: Nanotechnology doi: 10.1088/0957-4484/26/31/315601 – volume: 124 start-page: 1817 year: 2002 ident: 2023070321482750500_c25 publication-title: J. Am. Chem. Soc. doi: 10.1021/ja017284n – volume: 7 start-page: 1435 year: 2007 ident: 2023070321482750500_c19 publication-title: Nano Lett. doi: 10.1021/nl062871y – volume: 315 start-page: 37 year: 2011 ident: 2023070321482750500_c5 publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2010.10.036 – volume: 311 start-page: 794 year: 2009 ident: 2023070321482750500_c4 publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2008.09.097 – volume: 6 start-page: 362 year: 1985 ident: 2023070321482750500_c6 publication-title: J. Phase Equilibr. – volume: 79 start-page: 1546 year: 2001 ident: 2023070321482750500_c10 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1401089 – volume: 419 start-page: 88 year: 2015 ident: 2023070321482750500_c14 publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2015.02.098 – volume: 315 start-page: 196 year: 2011 ident: 2023070321482750500_c12 publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2010.09.062 – volume: 137 start-page: 3612 year: 1990 ident: 2023070321482750500_c30 publication-title: J. Electrochem. Soc. doi: 10.1149/1.2086277 – volume: 7 start-page: 1898 year: 1989 ident: 2023070321482750500_c28 publication-title: J. Vacuum Sci. Technol. A doi: 10.1116/1.576025 |
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Snippet | Meltback etching, a deteriorating chemical reaction occurring between gallium and silicon under typical metal organic chemical vapor deposition growth... |
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SubjectTerms | Applied physics Carrier gases Chemical reactions Condensed Matter Energy dispersive X ray spectroscopy Etching Gallium nitrides Materials Science Metalorganic chemical vapor deposition Organic chemicals Organic chemistry Physics Silicon Silicon substrates Two dimensional models |
Title | Evolution and prevention of meltback etching: Case study of semipolar GaN growth on patterned silicon substrates |
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