Highly sensitive GaAs/AlGaAs heterojunction bolometer

• Published in: Sensors and actuators. A. Physical. Vol. 167; no. 2; pp. 245 - 248
• Main Authors: Pitigala, P.K.D.D.P., Jayaweera, P.V.V., Matsik, S.G., Perera, A.G.U., Liu, H.C.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.06.2011
• Subjects: Aluminum; Aluminum gallium arsenides; Bolometer; Bolometers; Density; Doping; Doping (additives); Doping densities; electrical equipment; Emitter doping; equipment design; equipment performance; GaAs; GaAs/AlGaAs; Gallium; Gallium arsenide; Gallium arsenides; Heterojunction structures; Heterojunctions; High temperature coefficient; Highly sensitive; Infrared detectors; Infrared response; Low temperatures; Multilayer Heterojunction; Multilayers; N-doped; Optimum parameters; Phosphorus; Room temperature; TCR; temperature; 85.60Gz; TCR; GaAs/AlGaAs; 07.57Kp; Bolometer; 85.25Pb; 95.55 Rg; Room temperature

GaAs/AlGaAs multilayer heterojunction structures with different aluminum (Al) fractions and emitter doping densities were tested to identify optimum parameters for high temperature coefficient of resistance (TCR). Higher Al fractions and lower doping densities showed higher TCR. Additionally, p-dope...