Highly sensitive GaAs/AlGaAs heterojunction bolometer - Pitigala, P.K.D.D.P.; Jayaweera, P.V.V.; Matsik, S.G.; Perera, A.G.U.; Liu, H.C. (Sensors and actuators. A. Physical., 2011)
Keywords: Aluminum; Aluminum gallium arsenides; Bolometer; Bolometers; Density; Doping; Doping (additives); Doping densities; electrical equipment; Emitter doping; equipment design; equipment performance; GaAs; GaAs/AlGaAs; Gallium; Gallium arsenide; Gallium arsenides; Heterojunction structures; Heterojunctions; High temperature coefficient; Highly sensitive; Infrared detectors; Infrared response; Low temperatures; Multilayer Heterojunction; Multilayers; N-doped; Optimum parameters; Phosphorus; Room temperature; TCR; temperature; 85.60Gz; TCR; GaAs/AlGaAs; 07.57Kp; Bolometer; 85.25Pb; 95.55 Rg; Room temperature