Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy
Although conventional homoepitaxy forms high-quality epitaxial layers 1 – 5 , the limited set of material systems for commercially available wafers restricts the range of materials that can be grown homoepitaxially. At the same time, conventional heteroepitaxy of lattice-mismatched systems produces...
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Published in | Nature nanotechnology Vol. 15; no. 4; pp. 272 - 276 |
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Main Authors | , , , , , , , , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
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Nature Publishing Group UK
01.04.2020
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Abstract | Although conventional homoepitaxy forms high-quality epitaxial layers
1
–
5
, the limited set of material systems for commercially available wafers restricts the range of materials that can be grown homoepitaxially. At the same time, conventional heteroepitaxy of lattice-mismatched systems produces dislocations above a critical strain energy to release the accumulated strain energy as the film thickness increases. The formation of dislocations, which severely degrade electronic/photonic device performances
6
–
8
, is fundamentally unavoidable in highly lattice-mismatched epitaxy
9
–
11
. Here, we introduce a unique mechanism of relaxing misfit strain in heteroepitaxial films that can enable effective lattice engineering. We have observed that heteroepitaxy on graphene-coated substrates allows for spontaneous relaxation of misfit strain owing to the slippery graphene surface while achieving single-crystalline films by reading the atomic potential from the substrate. This spontaneous relaxation technique could transform the monolithic integration of largely lattice-mismatched systems by covering a wide range of the misfit spectrum to enhance and broaden the functionality of semiconductor devices for advanced electronics and photonics.
The spontaneous relaxation of misfit strain achieved on graphene-coated substrates enables the growth of heteroepitaxial single-crystalline films with reduced dislocation density. |
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AbstractList | Although conventional homoepitaxy forms high-quality epitaxial layers1–5, the limited set of material systems for commercially available wafers restricts the range of materials that can be grown homoepitaxially. At the same time, conventional heteroepitaxy of lattice-mismatched systems produces dislocations above a critical strain energy to release the accumulated strain energy as the film thickness increases. The formation of dislocations, which severely degrade electronic/photonic device performances6–8, is fundamentally unavoidable in highly lattice-mismatched epitaxy9–11. Here, we introduce a unique mechanism of relaxing misfit strain in heteroepitaxial films that can enable effective lattice engineering. We have observed that heteroepitaxy on graphene-coated substrates allows for spontaneous relaxation of misfit strain owing to the slippery graphene surface while achieving single-crystalline films by reading the atomic potential from the substrate. This spontaneous relaxation technique could transform the monolithic integration of largely lattice-mismatched systems by covering a wide range of the misfit spectrum to enhance and broaden the functionality of semiconductor devices for advanced electronics and photonics.The spontaneous relaxation of misfit strain achieved on graphene-coated substrates enables the growth of heteroepitaxial single-crystalline films with reduced dislocation density. Although conventional homoepitaxy forms high-quality epitaxial layers , the limited set of material systems for commercially available wafers restricts the range of materials that can be grown homoepitaxially. At the same time, conventional heteroepitaxy of lattice-mismatched systems produces dislocations above a critical strain energy to release the accumulated strain energy as the film thickness increases. The formation of dislocations, which severely degrade electronic/photonic device performances , is fundamentally unavoidable in highly lattice-mismatched epitaxy . Here, we introduce a unique mechanism of relaxing misfit strain in heteroepitaxial films that can enable effective lattice engineering. We have observed that heteroepitaxy on graphene-coated substrates allows for spontaneous relaxation of misfit strain owing to the slippery graphene surface while achieving single-crystalline films by reading the atomic potential from the substrate. This spontaneous relaxation technique could transform the monolithic integration of largely lattice-mismatched systems by covering a wide range of the misfit spectrum to enhance and broaden the functionality of semiconductor devices for advanced electronics and photonics. Although conventional homoepitaxy forms high-quality epitaxial layers 1 – 5 , the limited set of material systems for commercially available wafers restricts the range of materials that can be grown homoepitaxially. At the same time, conventional heteroepitaxy of lattice-mismatched systems produces dislocations above a critical strain energy to release the accumulated strain energy as the film thickness increases. The formation of dislocations, which severely degrade electronic/photonic device performances 6 – 8 , is fundamentally unavoidable in highly lattice-mismatched epitaxy 9 – 11 . Here, we introduce a unique mechanism of relaxing misfit strain in heteroepitaxial films that can enable effective lattice engineering. We have observed that heteroepitaxy on graphene-coated substrates allows for spontaneous relaxation of misfit strain owing to the slippery graphene surface while achieving single-crystalline films by reading the atomic potential from the substrate. This spontaneous relaxation technique could transform the monolithic integration of largely lattice-mismatched systems by covering a wide range of the misfit spectrum to enhance and broaden the functionality of semiconductor devices for advanced electronics and photonics. The spontaneous relaxation of misfit strain achieved on graphene-coated substrates enables the growth of heteroepitaxial single-crystalline films with reduced dislocation density. While conventional homoepitaxy forms high-quality epitaxial layers, the limited set of material systems for commercially available wafers restricts the range of materials that can be grown homoepitaxially. At the same time, conventional heteroepitaxy of lattice-mismatched systems produces dislocations above a critical strain energy to release the accumulated strain energy as the film thickness increases. The formation of dislocations, which severely degrade electronic/photonic device performances, is fundamentally unavoidable in highly lattice-mismatched epitaxy. Herein, we introduce a unique mechanism of relaxing misfit strain in heteroepitaxial films that can enable effective lattice engineering. We have observed that heteroepitaxy on graphene-coated substrates allows for spontaneous relaxation of misfit strain owing to the slippery graphene surface while achieving single-crystalline films by reading the atomic potential from the substrate. This spontaneous relaxation technique could transform the monolithic integration of largely lattice-mismatched systems by covering a wide range of the misfit spectrum to enhance and broaden the functionality of semiconductor devices for advanced electronics and photonics. |
Author | Park, Jinhee Lee, Kyusang Qiao, Kuan Choi, Chanyeol Kim, Hyunseok Bae, Sang-Hoon Kum, Hyun S. Nie, Yifan Lee, Jaeyong Kim, Jeehwan Kong, Wei Kang, Beom-Seok Kim, Chansoo Baek, Yongmin Chen, Peng Kim, Sungkyu Shim, Jaewoo Muller, David A. Han, Yimo Lu, Kuangye Joo, Minho |
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Snippet | Although conventional homoepitaxy forms high-quality epitaxial layers
1
–
5
, the limited set of material systems for commercially available wafers restricts... Although conventional homoepitaxy forms high-quality epitaxial layers , the limited set of material systems for commercially available wafers restricts the... Although conventional homoepitaxy forms high-quality epitaxial layers1–5, the limited set of material systems for commercially available wafers restricts the... While conventional homoepitaxy forms high-quality epitaxial layers, the limited set of material systems for commercially available wafers restricts the range... |
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SubjectTerms | 140/133 639/301/357/918 639/925/357 Chemistry and Materials Science Crystal dislocations Crystal structure Crystallinity Dislocation Dislocation density Electronic devices Film thickness Graphene Letter Materials Science NANOSCIENCE AND NANOTECHNOLOGY Nanotechnology Nanotechnology and Microengineering Photonics Semiconductor devices Single crystals Substrates |
Title | Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy |
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