Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers
The use of ITO interlayers between Ga2O3 and Ti/Au metallization is shown to produce Ohmic contacts after annealing in the range of 500–600 °C. Without the ITO, similar anneals do not lead to linear current–voltage characteristics. Transmission line measurements were used to extract the specific con...
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| Published in | Journal of vacuum science and technology. B, Nanotechnology & microelectronics Vol. 35; no. 6 |
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| Main Authors | , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
United States
American Vacuum Society/AIP
01.11.2017
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| Subjects | |
| Online Access | Get full text |
| ISSN | 2166-2746 2166-2754 |
| DOI | 10.1116/1.4995816 |
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| Abstract | The use of ITO interlayers between Ga2O3 and Ti/Au metallization is shown to produce Ohmic contacts after annealing in the range of 500–600 °C. Without the ITO, similar anneals do not lead to linear current–voltage characteristics. Transmission line measurements were used to extract the specific contact resistance of the Au/Ti/ITO/Ga2O3 stacks as a function of annealing temperature. Sheet, specific contact, and transfer resistances all decreased sharply from as-deposited values with annealing. The minimum transfer resistance and specific contact resistance of 0.60 Ω mm and 6.3 × 10−5 Ω cm2 were achieved after 600 °C annealing, respectively. The conduction band offset between ITO and Ga2O3 is 0.32 eV and is consistent with the improved electron transport across the heterointerface. |
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| AbstractList | In this work, the use of ITO interlayers between Ga2O3 and Ti/Au metallization is shown to produce Ohmic contacts after annealing in the range of 500–600 °C. Without the ITO, similar anneals do not lead to linear current–voltage characteristics. Transmission line measurements were used to extract the specific contact resistance of the Au/Ti/ITO/Ga2O3 stacks as a function of annealing temperature. Sheet, specific contact, and transfer resistances all decreased sharply from as-deposited values with annealing. The minimum transfer resistance and specific contact resistance of 0.60 Ω mm and 6.3 × 10-5 Ω cm2 were achieved after 600 °C annealing, respectively. Lastly, the conduction band offset between ITO and Ga2O3 is 0.32 eV and is consistent with the improved electron transport across the heterointerface. The use of ITO interlayers between Ga2O3 and Ti/Au metallization is shown to produce Ohmic contacts after annealing in the range of 500–600 °C. Without the ITO, similar anneals do not lead to linear current–voltage characteristics. Transmission line measurements were used to extract the specific contact resistance of the Au/Ti/ITO/Ga2O3 stacks as a function of annealing temperature. Sheet, specific contact, and transfer resistances all decreased sharply from as-deposited values with annealing. The minimum transfer resistance and specific contact resistance of 0.60 Ω mm and 6.3 × 10−5 Ω cm2 were achieved after 600 °C annealing, respectively. The conduction band offset between ITO and Ga2O3 is 0.32 eV and is consistent with the improved electron transport across the heterointerface. |
| Author | Kravchenko, Ivan I. Ren, Fan Yang, Jiancheng Kuramata, Akito Hays, David C. Pearton, Stephen J. Carey, Patrick H. |
| Author_xml | – sequence: 1 givenname: Patrick H. surname: Carey fullname: Carey, Patrick H. organization: Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 – sequence: 2 givenname: Jiancheng surname: Yang fullname: Yang, Jiancheng organization: Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 – sequence: 3 givenname: Fan surname: Ren fullname: Ren, Fan organization: Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 – sequence: 4 givenname: David C. surname: Hays fullname: Hays, David C. organization: Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 – sequence: 5 givenname: Stephen J. surname: Pearton fullname: Pearton, Stephen J. email: spear@mse.ufl.edu organization: Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 – sequence: 6 givenname: Akito surname: Kuramata fullname: Kuramata, Akito organization: Tamura Corporation, Sayama, Saitama 350-1328, Japan and Novel Crystal Technology, Inc., Sayama, Saitama 350-1328, Japan – sequence: 7 givenname: Ivan I. surname: Kravchenko fullname: Kravchenko, Ivan I. organization: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 |
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| BookMark | eNp9kFFLwzAUhYNMcM49-A-KbwrdkiZNm0cZcw4GfZnPIU0TG1mbkWSD_XszNieoeF_uefjO4d5zCwa97RUA9whOEEJ0iiaEsbxE9AoMM0RpmhU5GVw0oTdg7P0HjEPLHGI4BPNlt3V2rzrVh8TqpGo7IxNp-yBk8Intk4XIKpyE1tnde5vsvDpiy3WVmj4otxEH5fwduNZi49X4vEfg7WW-nr2mq2qxnD2vUkmyIqRM1AXNWENqxnBeQNhEgZiucyRhXWJGak1rqkkBFS1FViLSSChwozUlWGk8Ag-nXOuD4V6aoGQbj-2VDBzh-HyGIvR4gqSz3jul-daZTrgDR5Afe-KIn3uK7PQHGzNFMPF_J8zmT8fTyeG_yEv83rpvkG8b_R_8O_kTm5uGFw |
| CODEN | JVTBD9 |
| CitedBy_id | crossref_primary_10_1016_j_ssc_2022_114685 crossref_primary_10_1007_s12613_024_2926_4 crossref_primary_10_1063_5_0027470 crossref_primary_10_1007_s42452_021_04895_9 crossref_primary_10_1002_pssr_202300172 crossref_primary_10_1186_s11671_018_2667_2 crossref_primary_10_1063_1_5038615 crossref_primary_10_3390_cryst14020123 crossref_primary_10_1109_LED_2022_3200862 crossref_primary_10_1021_acsami_9b09166 crossref_primary_10_1149_2162_8777_ac3ace crossref_primary_10_1016_j_apsusc_2021_151814 crossref_primary_10_1021_acsaelm_2c00101 crossref_primary_10_1088_1361_6463_ab7e67 crossref_primary_10_1002_pssa_202300251 crossref_primary_10_1116_6_0000928 crossref_primary_10_1007_s43673_021_00033_0 crossref_primary_10_1109_TPEL_2019_2946367 crossref_primary_10_1002_aelm_202400690 crossref_primary_10_1557_s43578_021_00334_y crossref_primary_10_1016_j_surfin_2024_103937 crossref_primary_10_1088_1361_6641_ad49c8 crossref_primary_10_3390_s25020345 crossref_primary_10_1116_6_0001211 crossref_primary_10_1116_6_0002144 crossref_primary_10_1063_5_0187009 crossref_primary_10_3390_nano14030300 crossref_primary_10_1360_TB_2022_0683 crossref_primary_10_1149_2162_8777_ac6118 crossref_primary_10_3390_ma16247693 crossref_primary_10_1002_pssa_202400400 crossref_primary_10_1364_PRJ_7_000381 crossref_primary_10_1063_5_0238720 crossref_primary_10_1088_1361_6641_abc1fd crossref_primary_10_1002_aelm_202300844 crossref_primary_10_1088_1674_4926_40_1_012805 crossref_primary_10_3390_nano12071061 crossref_primary_10_1088_1361_6463_ac8818 crossref_primary_10_1007_s12274_018_2193_7 crossref_primary_10_1186_s11671_019_3092_x crossref_primary_10_1038_s41467_025_57200_2 crossref_primary_10_1016_j_mtcomm_2022_104244 crossref_primary_10_1557_mrc_2019_4 crossref_primary_10_3390_inorganics11100397 crossref_primary_10_1116_1_5138715 crossref_primary_10_7567_JJAP_57_100312 crossref_primary_10_1007_s10854_019_00669_7 crossref_primary_10_1088_1361_6641_aaf8d7 crossref_primary_10_1063_1_5006941 |
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| ContentType | Journal Article |
| Copyright | American Vacuum Society |
| Copyright_xml | – notice: American Vacuum Society |
| CorporateAuthor | Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States) |
| CorporateAuthor_xml | – name: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States) |
| DBID | AAYXX CITATION OIOZB OTOTI |
| DOI | 10.1116/1.4995816 |
| DatabaseName | CrossRef OSTI.GOV - Hybrid OSTI.GOV |
| DatabaseTitle | CrossRef |
| DatabaseTitleList | CrossRef |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering |
| EISSN | 2166-2754 |
| ExternalDocumentID | 1399521 10_1116_1_4995816 |
| GrantInformation_xml | – fundername: U.S. Department of Energy (DOE) funderid: http://dx.doi.org/10.13039/100000015 – fundername: Defense Threat Reduction Agency (DTRA) grantid: HDTRA1-17-1-011 funderid: http://dx.doi.org/10.13039/100000774 – fundername: New Energy and Industrial Technology Development Organization (NEDO) funderid: http://dx.doi.org/10.13039/501100001863 |
| GroupedDBID | .DC AAAAW AAEUA AAPUP AAYIH ABNAN ACBRY ACGFS ADLOM AFHCQ AGKCL AGTJO AGVCI ALMA_UNASSIGNED_HOLDINGS ARCSS EBS EJD M71 RIP RNS RQS VAS AAGWI AAYXX ABJGX ADMLS CITATION AQWKA OIOZB OTOTI UG7 |
| ID | FETCH-LOGICAL-c427t-9ab7629d4b9935700db9919fb51c0b8394bf6b6f470e68a2814dc0a3dff643ef3 |
| ISSN | 2166-2746 |
| IngestDate | Fri May 19 01:04:41 EDT 2023 Thu Apr 24 23:08:25 EDT 2025 Tue Jul 01 02:43:44 EDT 2025 Sun Jul 14 10:05:12 EDT 2019 Fri Jun 21 00:14:30 EDT 2024 |
| IsDoiOpenAccess | true |
| IsOpenAccess | true |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 6 |
| Language | English |
| License | 2166-2746/2017/35(6)/061201/5/$30.00 |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c427t-9ab7629d4b9935700db9919fb51c0b8394bf6b6f470e68a2814dc0a3dff643ef3 |
| Notes | USDOE Office of Science (SC), Basic Energy Sciences (BES) AC05-00OR22725 |
| OpenAccessLink | https://www.osti.gov/servlets/purl/1399521 |
| PageCount | 5 |
| ParticipantIDs | osti_scitechconnect_1399521 crossref_primary_10_1116_1_4995816 crossref_citationtrail_10_1116_1_4995816 scitation_primary_10_1116_1_4995816 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | 2017-11-01 |
| PublicationDateYYYYMMDD | 2017-11-01 |
| PublicationDate_xml | – month: 11 year: 2017 text: 2017-11-01 day: 01 |
| PublicationDecade | 2010 |
| PublicationPlace | United States |
| PublicationPlace_xml | – name: United States |
| PublicationTitle | Journal of vacuum science and technology. B, Nanotechnology & microelectronics |
| PublicationYear | 2017 |
| Publisher | American Vacuum Society/AIP |
| Publisher_xml | – name: American Vacuum Society/AIP |
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| SSID | ssj0000685030 |
| Score | 2.4329762 |
| Snippet | The use of ITO interlayers between Ga2O3 and Ti/Au metallization is shown to produce Ohmic contacts after annealing in the range of 500–600 °C. Without the... In this work, the use of ITO interlayers between Ga2O3 and Ti/Au metallization is shown to produce Ohmic contacts after annealing in the range of 500–600 °C.... |
| SourceID | osti crossref scitation |
| SourceType | Open Access Repository Enrichment Source Index Database Publisher |
| SubjectTerms | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS MATERIALS SCIENCE |
| Title | Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers |
| URI | http://dx.doi.org/10.1116/1.4995816 https://www.osti.gov/servlets/purl/1399521 |
| Volume | 35 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1Lb9QwELaW7QF6QDzFUkAWcEBaJcRex5scS2nZVpQ9sJV6ixzHViXaTbVKKsGvZ_yIE9CCCpcossaONPNlPB7PA6G3CmxowoSOdCryiElCo1xQFpGq4oBplTBpspFPv_DFGTs5T89Ho-NB1FLblLH8sTWv5H-kCmMgV5Ml-w-SDYvCALyDfOEJEobnrWTsPAKqu89fXphAdxN8LqS7Bvgk6HIWevG0zm9_vFpGpkrE5lJ89_HvW8zTGyHb9mrapf3YQMvgho-nH7xqrvtBi6IrE-DX99YJFrvJc3JeP9sT4Nt0EQeF413WJ8a_cqH8VmougZxKPOoBvBAOdzYSf3oQD30WsA-S4LOwqo0SziM4D_si2MMxV1K6082ulInHIP-DyrfehxiObmlG-B20Q-HEkIzRzv7H089fg8Mt4Vma2N4z4eu-0hSs8D7M_8U-GdegZ3fRXeC1C4wY2B6rB-i-lwredwh4iEZq_QjtDkpJPkaHAyzgWmOLBdxhAddrbLGAPRYwYMGQ_YaFJ-js6HB1sIh8i4xIMjpv4L8qYTfLK1aCnWlaFVTwQnJdpkQmJRi_rNS85JrNE8UzQTPCKpmIWaU1mKJKz56i8bpeq2cIy4zM5UyDgjeX5zlMJRyImNK5ZkzSCXrXMabo2GHamFwW7hzJC1J4Hk7Q60B67YqmbCPaM9wtDG8BqdLEdcmmICbXmpIJehOY_rc1tlDd1Jueoriu9PNbrbWH7vVQfYHGzaZVL8HgbMpXHko_ATuNfcw |
| linkProvider | EBSCOhost |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Improvement+of+Ohmic+contacts+on+Ga2O3+through+use+of+ITO-interlayers&rft.jtitle=Journal+of+vacuum+science+and+technology.+B%2C+Nanotechnology+%26+microelectronics&rft.au=Carey%2C+Patrick+H.&rft.au=Yang%2C+Jiancheng&rft.au=Ren%2C+Fan&rft.au=Hays%2C+David+C.&rft.date=2017-11-01&rft.issn=2166-2746&rft.eissn=2166-2754&rft.volume=35&rft.issue=6&rft_id=info:doi/10.1116%2F1.4995816 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=2166-2746&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=2166-2746&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=2166-2746&client=summon |