Metal-ferroelectric-insulator-semiconductor memory FET with long retention and high endurance
A ferroelectric memory field-effect transistor (FET) with a Pt-SrBi/sub 2/Ta/sub 2/O/sub 9/-Hf-Al-O-Si gate stack was fabricated and its electrical properties were characterized. The insulating and ferroelectric layers were successively deposited by a laser ablation technique. Excellent data retenti...
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| Published in | IEEE electron device letters Vol. 25; no. 6; pp. 369 - 371 |
|---|---|
| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
New York
IEEE
01.06.2004
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
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| Abstract | A ferroelectric memory field-effect transistor (FET) with a Pt-SrBi/sub 2/Ta/sub 2/O/sub 9/-Hf-Al-O-Si gate stack was fabricated and its electrical properties were characterized. The insulating and ferroelectric layers were successively deposited by a laser ablation technique. Excellent data retention characteristics were obtained. The drain currents of on- and off-states were measured as a function of time, after /spl plusmn/6 V poling voltage applied to the gate electrode. The current ratio of the on- and off-states was more than 10/sup 6/ even after 12 days. Moreover, after 10/sup 12/ cycles of /spl plusmn/8 V pulses, this ratio was also more than 10/sup 6/. |
|---|---|
| AbstractList | A ferroelectric memory field-effect transistor (FET) with a Pt-SrBi sub(2)Ta sub(2)O sub(9)-Hf-Al-O-Si gate stack was fabricated and its electrical properties were characterized. The insulating and ferroelectric layers were successively deposited by a laser ablation technique. Excellent data retention characteristics were obtained. The drain currents of on- and off-states were measured as a function of time, after +/-6 V poling voltage applied to the gate electrode. The current ratio of the on- and off-states was more than 10 super(6) even after 12 days. Moreover, after 10 super(12) cycles of +/-8 V pulses, this ratio was also more than 10 super(6). A ferroelectric memory field-effect transistor (FET) with a Pt-SrBi/sub 2/Ta/sub 2/O/sub 9/-Hf-Al-O-Si gate stack was fabricated and its electrical properties were characterized. The insulating and ferroelectric layers were successively deposited by a laser ablation technique. Excellent data retention characteristics were obtained. The drain currents of on- and off-states were measured as a function of time, after /spl plusmn/6 V poling voltage applied to the gate electrode. The current ratio of the on- and off-states was more than 10/sup 6/ even after 12 days. Moreover, after 10/sup 12/ cycles of /spl plusmn/8 V pulses, this ratio was also more than 10/sup 6/. A ferroelectric memory field-effect transistor (FET) with a Pt-SrBi(2)Ta(2)O(9)-Hf-Al-O-Si gate stack was fabricated and its electrical properties were characterized. The insulating and ferroelectric layers were successively deposited by a laser ablation technique. Excellent data retention characteristics were obtained. The drain currents of on- and off-states were measured as a function of time, after +/-6 V poling voltage applied to the gate electrode. The current ratio of the on- and off-states was more than 10(6) even after 12 days. Moreover, after 10/12/ cycles of +/-8 V pulses, this ratio was also more than 10(6). |
| Author | Sakai, S. Ilangovan, R. |
| Author_xml | – sequence: 1 givenname: S. surname: Sakai fullname: Sakai, S. organization: National Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan – sequence: 2 givenname: R. surname: Ilangovan fullname: Ilangovan, R. organization: National Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan |
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| Cites_doi | 10.1063/1.1729173 10.1063/1.124446 10.1109/LED.2002.1015207 10.1143/JPSJ.31.506 10.1109/IEDM.1987.191530 10.1143/JJAP.41.6890 10.1109/LED.2002.1004214 10.1109/IEDM.1987.191531 10.1016/S0169-4332(96)00963-4 |
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| References | chan (ref8) 1987 chang (ref7) 1987 ref9 ref4 ref11 ref10 ref5 migita (ref3) 2001; 40 sakai (ref6) 0 ref2 ref1 |
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| Snippet | A ferroelectric memory field-effect transistor (FET) with a Pt-SrBi/sub 2/Ta/sub 2/O/sub 9/-Hf-Al-O-Si gate stack was fabricated and its electrical properties... A ferroelectric memory field-effect transistor (FET) with a Pt-SrBi(2)Ta(2)O(9)-Hf-Al-O-Si gate stack was fabricated and its electrical properties were... A ferroelectric memory field-effect transistor (FET) with a Pt-SrBi sub(2)Ta sub(2)O sub(9)-Hf-Al-O-Si gate stack was fabricated and its electrical properties... |
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| SubjectTerms | Crystallization Devices Durability Electric potential Electrodes Endurance Ferroelectric materials Ferroelectricity FETs Gates Insulation Laser ablation Nonvolatile memory Pulsed laser deposition Random access memory Voltage |
| Title | Metal-ferroelectric-insulator-semiconductor memory FET with long retention and high endurance |
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