Metal-ferroelectric-insulator-semiconductor memory FET with long retention and high endurance

A ferroelectric memory field-effect transistor (FET) with a Pt-SrBi/sub 2/Ta/sub 2/O/sub 9/-Hf-Al-O-Si gate stack was fabricated and its electrical properties were characterized. The insulating and ferroelectric layers were successively deposited by a laser ablation technique. Excellent data retenti...

Full description

Saved in:
Bibliographic Details
Published inIEEE electron device letters Vol. 25; no. 6; pp. 369 - 371
Main Authors Sakai, S., Ilangovan, R.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.06.2004
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Crystallization
Devices
Durability
Electric potential
Electrodes
Endurance
Ferroelectric materials
Ferroelectricity
FETs
Gates
Insulation
Laser ablation
Nonvolatile memory
Pulsed laser deposition
Random access memory
Voltage
Online AccessGet full text

Cover

More Information
Summary:A ferroelectric memory field-effect transistor (FET) with a Pt-SrBi/sub 2/Ta/sub 2/O/sub 9/-Hf-Al-O-Si gate stack was fabricated and its electrical properties were characterized. The insulating and ferroelectric layers were successively deposited by a laser ablation technique. Excellent data retention characteristics were obtained. The drain currents of on- and off-states were measured as a function of time, after /spl plusmn/6 V poling voltage applied to the gate electrode. The current ratio of the on- and off-states was more than 10/sup 6/ even after 12 days. Moreover, after 10/sup 12/ cycles of /spl plusmn/8 V pulses, this ratio was also more than 10/sup 6/.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2004.828992