The role of surface kinetics on composition and quality of AlGaN
Metal–polar, Al-rich AlGaN films were grown on both single crystalline AlN and sapphire substrates. The role of surface morphology and surface kinetics on AlGaN composition is presented. With the reduced dislocation density of the films grown on AlN substrates, atomically smooth bilayer stepped surf...
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| Published in | Journal of crystal growth Vol. 451; pp. 65 - 71 |
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| Main Authors | , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier B.V
01.10.2016
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| Subjects | |
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| Abstract | Metal–polar, Al-rich AlGaN films were grown on both single crystalline AlN and sapphire substrates. The role of surface morphology and surface kinetics on AlGaN composition is presented. With the reduced dislocation density of the films grown on AlN substrates, atomically smooth bilayer stepped surfaces are achieved with RMS roughness of less than 50pm for a 5×5µm2 AFM scan area. By controlling the surface supersaturation through adjusting the growth rate, a transition from 2D nucleation to step flow was observed. The critical misorientation angle for step-bunching in nominal Al0.70Ga0.30N grown with a growth rate of 600nm/h on AlN substrates was found to be 0.4°. The composition of bilayer stepped AlGaN was strongly dependent on substrate misorientation angle, where a compositional variation by a factor of two for a change in misorientation angle from 0.05 to 0.40° was observed; this is explained by the different surface diffusion lengths of Ga and Al. Step-bunching resulted in strong compositional inhomogeneity as observed by photoluminescence and scanning transmission electron microscopy studies.
•A kinetic framework for controlling the surface during AlGaN growth on Al-polar surfaces by MOCVD is developed.•The role of surface morphology and surface kinetics on AlGaN composition is presented.•Apparent phase separation of AlGaN was determined not to be an intrinsic property of AlGaN. |
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| AbstractList | Metal–polar, Al-rich AlGaN films were grown on both single crystalline AlN and sapphire substrates. The role of surface morphology and surface kinetics on AlGaN composition is presented. With the reduced dislocation density of the films grown on AlN substrates, atomically smooth bilayer stepped surfaces are achieved with RMS roughness of less than 50pm for a 5×5µm2 AFM scan area. By controlling the surface supersaturation through adjusting the growth rate, a transition from 2D nucleation to step flow was observed. The critical misorientation angle for step-bunching in nominal Al0.70Ga0.30N grown with a growth rate of 600nm/h on AlN substrates was found to be 0.4°. The composition of bilayer stepped AlGaN was strongly dependent on substrate misorientation angle, where a compositional variation by a factor of two for a change in misorientation angle from 0.05 to 0.40° was observed; this is explained by the different surface diffusion lengths of Ga and Al. Step-bunching resulted in strong compositional inhomogeneity as observed by photoluminescence and scanning transmission electron microscopy studies.
•A kinetic framework for controlling the surface during AlGaN growth on Al-polar surfaces by MOCVD is developed.•The role of surface morphology and surface kinetics on AlGaN composition is presented.•Apparent phase separation of AlGaN was determined not to be an intrinsic property of AlGaN. |
| Author | Collazo, Ramón Mita, Seiji Shelton, Christopher Maria, Jon-Paul Bryan, Zachary Tweedie, James Sitar, Zlatko Rice, Anthony Hussey, Lindsay Bryan, Isaac |
| Author_xml | – sequence: 1 givenname: Isaac surname: Bryan fullname: Bryan, Isaac email: isbryan@ncsu.edu organization: Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA – sequence: 2 givenname: Zachary surname: Bryan fullname: Bryan, Zachary organization: Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA – sequence: 3 givenname: Seiji surname: Mita fullname: Mita, Seiji organization: Adroit Materials, Apex, NC 27539, USA – sequence: 4 givenname: Anthony surname: Rice fullname: Rice, Anthony organization: Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA – sequence: 5 givenname: Lindsay surname: Hussey fullname: Hussey, Lindsay organization: Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA – sequence: 6 givenname: Christopher surname: Shelton fullname: Shelton, Christopher organization: Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA – sequence: 7 givenname: James surname: Tweedie fullname: Tweedie, James organization: Adroit Materials, Apex, NC 27539, USA – sequence: 8 givenname: Jon-Paul surname: Maria fullname: Maria, Jon-Paul organization: Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA – sequence: 9 givenname: Ramón surname: Collazo fullname: Collazo, Ramón organization: Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA – sequence: 10 givenname: Zlatko surname: Sitar fullname: Sitar, Zlatko organization: Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA |
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| Keywords | A1. Growth models B1. Nitrides A3. Metalorganic chemical vapor deposition A1. Surface kinetics |
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| Snippet | Metal–polar, Al-rich AlGaN films were grown on both single crystalline AlN and sapphire substrates. The role of surface morphology and surface kinetics on... |
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| StartPage | 65 |
| SubjectTerms | A1. Growth models A1. Surface kinetics A3. Metalorganic chemical vapor deposition B1. Nitrides |
| Title | The role of surface kinetics on composition and quality of AlGaN |
| URI | https://dx.doi.org/10.1016/j.jcrysgro.2016.06.055 |
| Volume | 451 |
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