Near-Infrared Light Photovoltaic Detector Based on GaAs Nanocone Array/Monolayer Graphene Schottky Junction

• Published in: Advanced functional materials Vol. 24; no. 19; pp. 2794 - 2800
• Main Authors: Luo, Lin-Bao, Chen, Jing-Jing, Wang, Ming-Zheng, Hu, Han, Wu, Chun-Yan, Li, Qiang, Wang, Li, Huang, Jian-An, Liang, Feng-Xia
• Format: Journal Article
• Language: English
• Published: Blackwell Publishing Ltd 01.05.2014
• Subjects: Arrays; Devices; Electric potential; Gallium arsenide; Gallium arsenides; Graphene; light trapping; monolayer graphene; Monolayers; Nanostructure; nanostructures; near infrared light; photodetectors

Near infrared light photodiodes have been attracting increasing research interest due to their wide application in various fields. In this study, the fabrication of a new n‐type GaAs nanocone (GaAsNCs) array/monolayer graphene (MLG) Schottky junction is reported for NIR light detection. The NIR phot...