Near-Infrared Light Photovoltaic Detector Based on GaAs Nanocone Array/Monolayer Graphene Schottky Junction
Near infrared light photodiodes have been attracting increasing research interest due to their wide application in various fields. In this study, the fabrication of a new n‐type GaAs nanocone (GaAsNCs) array/monolayer graphene (MLG) Schottky junction is reported for NIR light detection. The NIR phot...
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| Published in | Advanced functional materials Vol. 24; no. 19; pp. 2794 - 2800 |
|---|---|
| Main Authors | , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Blackwell Publishing Ltd
01.05.2014
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| Subjects | |
| Online Access | Get full text |
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| Abstract | Near infrared light photodiodes have been attracting increasing research interest due to their wide application in various fields. In this study, the fabrication of a new n‐type GaAs nanocone (GaAsNCs) array/monolayer graphene (MLG) Schottky junction is reported for NIR light detection. The NIR photodetector (NIRPD) shows obvious rectifying behavior with a turn‐on voltage of 0.6 V. Further device analysis reveals that the photovoltaic NIRPDs are highly sensitive to 850 nm light illumination, with a fast response speed and good spectral selectivity at zero bias voltage. It is also revealed that the NIRPD is capable of monitoring high‐switching frequency optical signals (∼2000 Hz) with a high relative balance. Theoretical simulations based on finite difference time domain (FDTD) analysis finds that the high device performance is partially associated with the optical property, which can trap most incident photons in an efficient way. It is expected that such a self‐driven NIRPD will have potential application in future optoelectronic devices.
A new Schottky junction near‐infrared light photodetector is fabricated by coating a GaAs nanocone array with a monolayer graphene film, which shows high sensitivity to near‐infrared light irradiation, with good reproducibility, excellent selectivity, and rapid response speed. |
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| AbstractList | Near infrared light photodiodes have been attracting increasing research interest due to their wide application in various fields. In this study, the fabrication of a new
n
‐type GaAs nanocone (GaAsNCs) array/monolayer graphene (MLG) Schottky junction is reported for NIR light detection. The NIR photodetector (NIRPD) shows obvious rectifying behavior with a turn‐on voltage of 0.6 V. Further device analysis reveals that the photovoltaic NIRPDs are highly sensitive to 850 nm light illumination, with a fast response speed and good spectral selectivity at zero bias voltage. It is also revealed that the NIRPD is capable of monitoring high‐switching frequency optical signals (∼2000 Hz) with a high relative balance. Theoretical simulations based on finite difference time domain (FDTD) analysis finds that the high device performance is partially associated with the optical property, which can trap most incident photons in an efficient way. It is expected that such a self‐driven NIRPD will have potential application in future optoelectronic devices. Near infrared light photodiodes have been attracting increasing research interest due to their wide application in various fields. In this study, the fabrication of a new n‐type GaAs nanocone (GaAsNCs) array/monolayer graphene (MLG) Schottky junction is reported for NIR light detection. The NIR photodetector (NIRPD) shows obvious rectifying behavior with a turn‐on voltage of 0.6 V. Further device analysis reveals that the photovoltaic NIRPDs are highly sensitive to 850 nm light illumination, with a fast response speed and good spectral selectivity at zero bias voltage. It is also revealed that the NIRPD is capable of monitoring high‐switching frequency optical signals (∼2000 Hz) with a high relative balance. Theoretical simulations based on finite difference time domain (FDTD) analysis finds that the high device performance is partially associated with the optical property, which can trap most incident photons in an efficient way. It is expected that such a self‐driven NIRPD will have potential application in future optoelectronic devices. A new Schottky junction near‐infrared light photodetector is fabricated by coating a GaAs nanocone array with a monolayer graphene film, which shows high sensitivity to near‐infrared light irradiation, with good reproducibility, excellent selectivity, and rapid response speed. Near infrared light photodiodes have been attracting increasing research interest due to their wide application in various fields. In this study, the fabrication of a new n-type GaAs nanocone (GaAsNCs) array/monolayer graphene (MLG) Schottky junction is reported for NIR light detection. The NIR photodetector (NIRPD) shows obvious rectifying behavior with a turn-on voltage of 0.6 V. Further device analysis reveals that the photovoltaic NIRPDs are highly sensitive to 850 nm light illumination, with a fast response speed and good spectral selectivity at zero bias voltage. It is also revealed that the NIRPD is capable of monitoring high-switching frequency optical signals (2000 Hz) with a high relative balance. Theoretical simulations based on finite difference time domain (FDTD) analysis finds that the high device performance is partially associated with the optical property, which can trap most incident photons in an efficient way. It is expected that such a self-driven NIRPD will have potential application in future optoelectronic devices. A new Schottky junction near-infrared light photodetector is fabricated by coating a GaAs nanocone array with a monolayer graphene film, which shows high sensitivity to near-infrared light irradiation, with good reproducibility, excellent selectivity, and rapid response speed. |
| Author | Chen, Jing-Jing Li, Qiang Huang, Jian-An Wang, Li Luo, Lin-Bao Hu, Han Liang, Feng-Xia Wu, Chun-Yan Wang, Ming-Zheng |
| Author_xml | – sequence: 1 givenname: Lin-Bao surname: Luo fullname: Luo, Lin-Bao email: luolb@hfut.edu.cn organization: School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, 230009, Anhui, PR China – sequence: 2 givenname: Jing-Jing surname: Chen fullname: Chen, Jing-Jing organization: School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, 230009, Anhui, PR China – sequence: 3 givenname: Ming-Zheng surname: Wang fullname: Wang, Ming-Zheng organization: School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, 230009, Anhui, PR China – sequence: 4 givenname: Han surname: Hu fullname: Hu, Han organization: School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, 230009, Anhui, PR China – sequence: 5 givenname: Chun-Yan surname: Wu fullname: Wu, Chun-Yan organization: School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, 230009, Anhui, PR China – sequence: 6 givenname: Qiang surname: Li fullname: Li, Qiang organization: School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, 230009, Anhui, PR China – sequence: 7 givenname: Li surname: Wang fullname: Wang, Li organization: School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, 230009, Anhui, PR China – sequence: 8 givenname: Jian-An surname: Huang fullname: Huang, Jian-An email: luolb@hfut.edu.cn organization: Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, PR China – sequence: 9 givenname: Feng-Xia surname: Liang fullname: Liang, Feng-Xia email: luolb@hfut.edu.cn organization: School of Materials Science and Engineering, Hefei University of Technology, Hefei, 230009, Anhui, PR China |
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| SubjectTerms | Arrays Devices Electric potential Gallium arsenide Gallium arsenides Graphene light trapping monolayer graphene Monolayers Nanostructure nanostructures near infrared light photodetectors |
| Title | Near-Infrared Light Photovoltaic Detector Based on GaAs Nanocone Array/Monolayer Graphene Schottky Junction |
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