Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures

• Published in: Advanced functional materials Vol. 24; no. 15; pp. 2171 - 2179
• Main Authors: Shang, Jie, Liu, Gang, Yang, Huali, Zhu, Xiaojian, Chen, Xinxin, Tan, Hongwei, Hu, Benlin, Pan, Liang, Xue, Wuhong, Li, Run-Wei
• Format: Journal Article
• Language: English
• Published: Blackwell Publishing Ltd 01.04.2014
• Subjects: all-oxide; Devices; Electronics; Filaments; Hafnium oxide; Memory devices; Opacity; random access memory; Switching; Thermal stability; thermally stable; transparent electronics
• ISSN: 1616-301X; 1616-3028
• DOI: 10.1002/adfm.201303274

An all‐oxide transparent resistive random access memory (T‐RRAM) device based on hafnium oxide (HfOx) storage layer and indium‐tin oxide (ITO) electrodes is fabricated in this work. The memory device demonstrates not only good optical transmittance but also a forming‐free bipolar resistive switching...