Silicon carbide benefits and advantages for power electronics circuits and systems
Silicon offers multiple advantages to power circuit designers, but at the same time suffers from limitations that are inherent to silicon material properties, such as low bandgap energy, low thermal conductivity, and switching frequency limitations. Wide bandgap semiconductors, such as silicon carbi...
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| Published in | Proceedings of the IEEE Vol. 90; no. 6; pp. 969 - 986 |
|---|---|
| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
New York
IEEE
2002
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subjects | |
| Online Access | Get full text |
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| Abstract | Silicon offers multiple advantages to power circuit designers, but at the same time suffers from limitations that are inherent to silicon material properties, such as low bandgap energy, low thermal conductivity, and switching frequency limitations. Wide bandgap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), provide larger bandgaps, higher breakdown electric field, and higher thermal conductivity. Power semiconductor devices made with SiC and GaN are capable of higher blocking voltages, higher switching frequencies, and higher junction temperatures than silicon devices. SiC is by far the most advanced material and, hence, is the subject of attention from power electronics and systems designers. This paper looks at the benefits of using SiC in power electronics applications, reviews the current state of the art, and shows how SiC can be a strong and viable candidate for future power electronics and systems applications. |
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| AbstractList | Silicon offers multiple advantages to power circuit designers, but at the same time suffers from limitations that are inherent to silicon material properties, such as low bandgap energy, low thermal conductivity, and switching frequency limitations. Wide bandgap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), provide larger bandgaps, higher breakdown electric field, and higher thermal conductivity. Power semiconductor devices made with SiC and GaN are capable of higher blocking voltages, higher switching frequencies, and higher junction temperatures than silicon devices. SiC is by far the most advanced material and, hence, is the subject of attention from power electronics and systems designers. This paper looks at the benefits of using SiC in power electronics applications, reviews the current state of the art, and shows how SiC can be a strong and viable candidate for future power electronics and systems applications. |
| Author | Chow, T.P. Elasser, A. |
| Author_xml | – sequence: 1 givenname: A. surname: Elasser fullname: Elasser, A. email: elasser@crd.ge.com organization: Gen. Electr. Corporate Res. & Dev., Niskayuna, NY, USA – sequence: 2 givenname: T.P. surname: Chow fullname: Chow, T.P. email: chowt@rpi.edu |
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| Snippet | Silicon offers multiple advantages to power circuit designers, but at the same time suffers from limitations that are inherent to silicon material properties,... |
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| SubjectTerms | Circuits and systems Electric power generation Electronics Gallium nitride Gallium nitrides Heat transfer III-V semiconductor materials Material properties Photonic band gap Power electronics Silicon Silicon carbide Switching Switching frequency Thermal conductivity Wide band gap semiconductors |
| Title | Silicon carbide benefits and advantages for power electronics circuits and systems |
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