Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth
Mg-doped, 1-μm-thick, p-type GaN films were grown by metal-organic chemical vapor deposition using indium-assisted method. The influence of flow rate ratio of indium to magnesium (In/Mg ratio) on the quality of p-GaN thin films was investigated by atomic force microscope, X-ray diffraction, Hall mea...
Saved in:
| Published in | Applied physics. A, Materials science & processing Vol. 116; no. 4; pp. 1561 - 1566 |
|---|---|
| Main Authors | , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Berlin/Heidelberg
Springer Berlin Heidelberg
01.09.2014
|
| Subjects | |
| Online Access | Get full text |
Cover
Loading…
| Abstract | Mg-doped, 1-μm-thick, p-type GaN films were grown by metal-organic chemical vapor deposition using indium-assisted method. The influence of flow rate ratio of indium to magnesium (In/Mg ratio) on the quality of p-GaN thin films was investigated by atomic force microscope, X-ray diffraction, Hall measurement and secondary ion mass spectroscopy. The surface roughness, crystalline quality and hole concentrations of p-GaN present a different variation tendency below and above 0.183 In/Mg ratio. The evolution process of indium-adlayer model considering adsorption, desorption and the transformation of indium mono-adlayer was proposed to explain the above phenomenon. Indium-assisted growth method can improve surface smoothness and crystalline quality of p-GaN effectively without affecting its electrical properties. |
|---|---|
| AbstractList | Mg-doped, 1-μm-thick, p-type GaN films were grown by metal-organic chemical vapor deposition using indium-assisted method. The influence of flow rate ratio of indium to magnesium (In/Mg ratio) on the quality of p-GaN thin films was investigated by atomic force microscope, X-ray diffraction, Hall measurement and secondary ion mass spectroscopy. The surface roughness, crystalline quality and hole concentrations of p-GaN present a different variation tendency below and above 0.183 In/Mg ratio. The evolution process of indium-adlayer model considering adsorption, desorption and the transformation of indium mono-adlayer was proposed to explain the above phenomenon. Indium-assisted growth method can improve surface smoothness and crystalline quality of p-GaN effectively without affecting its electrical properties. |
| Author | Song, Shiwei Liang, Hongwei Luo, Yingmin Xia, Xiaochuan Liu, Yang Yang, Dechao Zhang, Kexiong Shen, Rensheng Du, Guotong Wang, Dongsheng |
| Author_xml | – sequence: 1 givenname: Kexiong surname: Zhang fullname: Zhang, Kexiong email: ask123h@163.com organization: School of Physics and Optoelectronic Engineering, Dalian University of Technology – sequence: 2 givenname: Hongwei surname: Liang fullname: Liang, Hongwei organization: School of Physics and Optoelectronic Engineering, Dalian University of Technology, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences – sequence: 3 givenname: Rensheng surname: Shen fullname: Shen, Rensheng organization: School of Physics and Optoelectronic Engineering, Dalian University of Technology – sequence: 4 givenname: Shiwei surname: Song fullname: Song, Shiwei organization: School of Physics and Optoelectronic Engineering, Dalian University of Technology – sequence: 5 givenname: Dongsheng surname: Wang fullname: Wang, Dongsheng organization: School of Physics and Optoelectronic Engineering, Dalian University of Technology – sequence: 6 givenname: Yang surname: Liu fullname: Liu, Yang organization: School of Physics and Optoelectronic Engineering, Dalian University of Technology – sequence: 7 givenname: Xiaochuan surname: Xia fullname: Xia, Xiaochuan organization: School of Physics and Optoelectronic Engineering, Dalian University of Technology – sequence: 8 givenname: Dechao surname: Yang fullname: Yang, Dechao organization: State Key Laboratory on Integrated Optoelectronics, School of Electronic Science and Engineering, Jilin University – sequence: 9 givenname: Yingmin surname: Luo fullname: Luo, Yingmin organization: School of Physics and Optoelectronic Engineering, Dalian University of Technology – sequence: 10 givenname: Guotong surname: Du fullname: Du, Guotong organization: School of Physics and Optoelectronic Engineering, Dalian University of Technology, State Key Laboratory on Integrated Optoelectronics, School of Electronic Science and Engineering, Jilin University |
| BookMark | eNp9kM1OwzAMgCM0JLbBA3DLCwTy3_aIJhhIExyAE4cobdIuU5tMSaupb0-mccYXW7I_y_5WYOGDtwDcE_xAMC4eE8aMVQgTjkpWciSuwJJwRhGWDC_AEle8yJ1K3oBVSgecg1O6BD-fQwjjHqYptrqxcAjxuA996GaovYF9OEHjUh8aPbrgobE-uXGGoYVHtNXvcErOd9B546YB6ZRcGq2BXQyncX8LrlvdJ3v3l9fg--X5a_OKdh_bt83TDjWc8hGZkthKStvagptSCJtLwfMTlbA1KSpmy9pqTOqSSEp4zaQsSkl4I6iujaBsDchlbxNDStG26hjdoOOsCFZnO-piR2U76mxHiczQC5PyrO9sVIcwRZ_P_Af6Bc4iamk |
| CitedBy_id | crossref_primary_10_1007_s00339_022_06134_3 crossref_primary_10_1016_j_mssp_2020_105431 crossref_primary_10_1108_MI_02_2021_0017 crossref_primary_10_1063_1_4948244 crossref_primary_10_7567_JJAP_55_031202 crossref_primary_10_35848_1882_0786_ac749d |
| Cites_doi | 10.1063/1.1448666 10.1103/PhysRevLett.90.056101 10.1063/1.3641476 10.1063/1.372098 10.1063/1.122579 10.1103/PhysRevB.64.035318 10.1063/1.1757020 10.1063/1.1545155 10.1063/1.1503392 10.1063/1.366585 10.1016/S0169-4332(02)00751-1 10.1016/j.matchemphys.2012.01.128 10.1063/1.3699009 10.1016/S0022-0248(98)00436-9 10.1107/S0365110X51001690 10.1016/S0022-0248(01)01914-5 10.1103/PhysRevLett.79.2273 10.1002/pssb.201046531 10.1016/j.jcrysgro.2007.06.005 10.1016/j.jcrysgro.2011.04.030 10.1002/1521-396X(200208)192:2<453::AID-PSSA453>3.0.CO;2-I 10.1016/j.jcrysgro.2004.04.102 10.1063/1.2719171 10.1063/1.1571217 10.1063/1.2364060 10.1063/1.1289794 10.1088/0022-3727/38/10A/019 10.1063/1.125622 10.1063/1.370150 10.1016/j.diamond.2011.12.018 |
| ContentType | Journal Article |
| Copyright | Springer-Verlag Berlin Heidelberg 2014 |
| Copyright_xml | – notice: Springer-Verlag Berlin Heidelberg 2014 |
| DBID | AAYXX CITATION |
| DOI | 10.1007/s00339-014-8384-5 |
| DatabaseName | CrossRef |
| DatabaseTitle | CrossRef |
| DatabaseTitleList | |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering Physics |
| EISSN | 1432-0630 |
| EndPage | 1566 |
| ExternalDocumentID | 10_1007_s00339_014_8384_5 |
| GroupedDBID | -54 -5F -5G -BR -EM -XW -XX -Y2 -~C -~X .86 .VR 06D 0R~ 0VY 199 1N0 1SB 2.D 203 23M 28- 29~ 2J2 2JN 2JY 2KG 2KM 2LR 2P1 2VQ 2~H 30V 4.4 406 408 409 40D 40E 5QI 5VS 67Z 6NX 78A 8UJ 95- 95. 95~ 96X AAAVM AABHQ AABYN AAFGU AAHNG AAIAL AAJKR AANZL AARHV AARTL AATNV AATVU AAUYE AAWCG AAYFA AAYIU AAYQN AAYTO ABBBX ABBXA ABDBF ABDZT ABECU ABFGW ABFTV ABHLI ABHQN ABJNI ABJOX ABKAS ABKCH ABKTR ABLJU ABMNI ABMQK ABNWP ABPTK ABQBU ABSXP ABTEG ABTHY ABTKH ABTMW ABULA ABWNU ABXPI ACBMV ACBRV ACBXY ACBYP ACGFS ACHSB ACHXU ACIGE ACIPQ ACIWK ACKNC ACMDZ ACMLO ACOKC ACOMO ACTTH ACVWB ACWMK ADHHG ADHIR ADIMF ADINQ ADJSZ ADKNI ADKPE ADMDM ADOXG ADRFC ADTPH ADURQ ADYFF ADZKW AEBTG AEEQQ AEFIE AEFTE AEGAL AEGNC AEJHL AEJRE AEKMD AEOHA AEPYU AESKC AESTI AETLH AEVLU AEVTX AEXYK AEYGD AFEXP AFGCZ AFGFF AFLOW AFNRJ AFQWF AFWTZ AFZKB AGAYW AGDGC AGGBP AGGDS AGJBK AGMZJ AGQMX AGWIL AGWZB AGYKE AHAVH AHBYD AHKAY AHSBF AHYZX AI. AIAKS AIIXL AILAN AIMYW AITGF AJBLW AJDOV AJRNO AJZVZ AKQUC ALMA_UNASSIGNED_HOLDINGS ALWAN AMKLP AMXSW AMYLF AMYQR AOCGG ARMRJ ASPBG AVWKF AXYYD AYJHY AZFZN B-. B0M BA0 BBWZM BDATZ BGNMA CAG COF CS3 CSCUP DDRTE DL5 DNIVK DPUIP EAD EAP EAS EBLON EBS EIOEI EJD EMK EPL ESBYG EST ESX F5P FEDTE FERAY FFXSO FIGPU FINBP FNLPD FRRFC FSGXE FWDCC GGCAI GGRSB GJIRD GNWQR GPTSA GQ6 GQ7 GQ8 GXS HF~ HG5 HG6 HMJXF HQYDN HRMNR HVGLF HZ~ H~9 I-F I09 IHE IJ- IKXTQ ITM IWAJR IXC IZIGR IZQ I~X I~Z J-C J0Z JBSCW JCJTX JZLTJ KDC KOV KOW LAS LLZTM M4Y MA- MK~ N2Q N9A NB0 NDZJH NPVJJ NQJWS NU0 O9- O93 O9G O9I O9J OAM P19 P2P P9T PF0 PT4 PT5 QOK QOS R89 R9I RHV RIG RNI RNS ROL RPX RSV RZK S16 S1Z S26 S27 S28 S3B SAP SCLPG SDH SGB SHUTK SHX SISQX SJYHP SNE SNPRN SNX SOHCF SOJ SPH SPISZ SRMVM SSLCW STPWE SZN T13 T16 TSG TSK TSV TUC TUS U2A UG4 UNUBA UOJIU UTJUX UZXMN VC2 VFIZW VH1 VOH W23 W48 W4F WH7 WIP WJK WK8 YLTOR Z45 Z5O Z7R Z7S Z7U Z7V Z7W Z7X Z7Y Z7Z Z83 Z85 Z86 Z88 Z8M Z8N Z8P Z8Q Z8R Z8S Z8T Z8W Z8Z Z92 ZE2 ZMTXR ~8M ~EX AACDK AAEOY AAJBT AASML AAYXX ABAKF ACAOD ACDTI ACZOJ AEFQL AEMSY AGQEE AGRTI AIGIU CITATION H13 |
| ID | FETCH-LOGICAL-c424t-d81e966efe74d855e6ef5438495eb1793e8bea01b816214b36678614c52abd523 |
| IEDL.DBID | U2A |
| ISSN | 0947-8396 |
| IngestDate | Thu Sep 12 19:01:01 EDT 2024 Sat Dec 16 12:02:09 EST 2023 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 4 |
| Keywords | Metal Adatoms Hole Concentration Flow Rate Ratio Root Mean Square Roughness Smooth Surface Morphology |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c424t-d81e966efe74d855e6ef5438495eb1793e8bea01b816214b36678614c52abd523 |
| PageCount | 6 |
| ParticipantIDs | crossref_primary_10_1007_s00339_014_8384_5 springer_journals_10_1007_s00339_014_8384_5 |
| PublicationCentury | 2000 |
| PublicationDate | 2014-09-01 |
| PublicationDateYYYYMMDD | 2014-09-01 |
| PublicationDate_xml | – month: 09 year: 2014 text: 2014-09-01 day: 01 |
| PublicationDecade | 2010 |
| PublicationPlace | Berlin/Heidelberg |
| PublicationPlace_xml | – name: Berlin/Heidelberg |
| PublicationSubtitle | Materials Science & Processing |
| PublicationTitle | Applied physics. A, Materials science & processing |
| PublicationTitleAbbrev | Appl. Phys. A |
| PublicationYear | 2014 |
| Publisher | Springer Berlin Heidelberg |
| Publisher_xml | – name: Springer Berlin Heidelberg |
| References | ZhangJCZhaoDGWangJFWangYTChenJLiuJPYangHJ. Cryst. Growth2004268242004JCrGr.268...24Z10.1016/j.jcrysgro.2004.04.102 YanQJanottiASchefflerMVan de WalleCGAppl. Phys. Lett.20121001421101421112012ApPhL.100n2110Y10.1063/1.3699009 YamaguchiSKariyaMKashimaTNittaSKosakiMYukawaYPhys. Rev. B2001640353182001PhRvB..64c5318Y10.1103/PhysRevB.64.035318 KozodoyPXingHDenBaarsSPUmesh MishraKSaxlerAPerrinRElhamriSMitchelWCJ. Appl. Phys.20008718322000JAP....87.1832K10.1063/1.372098 XianYLHuangSJZhengZYFanBFWuZSJiangHWangGJ. Cryst. Growth2011325322011JCrGr.325...32X10.1016/j.jcrysgro.2011.04.030 SimbrunnerCWegscheiderMQuastMLiTNavarro-QuezadaASitterHBonanniAAppl. Phys. Lett.2007901421082007ApPhL..90n2108S10.1063/1.2719171 ChungS.J.KumarM.S.LeeY.S.SuhE.-K.AnM.H.J. Phys. D Appl. Phys.2010431851011 AlbrechtJDRudenPPReineckeTLJ. Appl. Phys.20029238032002JAP....92.3803A10.1063/1.1503392 ChoiS.KimT.-H.WolterS.BrownA.EverittH.O.LosurdoM.BrunoG.Phys. Rev. B2008771154351 SchmidtTSiebertMFlegeJIFiggeSGangopadhyaySPretoriusALeeT-LZegenhagenJGregorattiLBarinovARosenauerAHommelDFaltaJPhys. Status Solidi B2011248181010.1002/pssb.201046531 JiangFWangR-VMunkholmAStreifferSKStephensonGBFuossPHLatifiKThompsonCAppl. Phys. Lett.2006891619152006ApPhL..89p1915J10.1063/1.2364060 AoyagiYTakeuchiMIwaiSHirayamaHAppl. Phys. Lett.2011991121101121112011ApPhL..99k2110A10.1063/1.3641476 LancefieldDEshghiHJ. Phys.:Condens.Matter20011389392001JPCM...13.8939L ChangFCShenKCChungHMLeeMCChenWHChenWKChinese J. Phys.2002406372002ChJPh..40..637C ChierchiaRBottcherTHeinkeHEinfeldtSFiggeSHommelDJ. Appl. Phys.20039389182003JAP....93.8918C10.1063/1.1571217 MalykOrestDiam. Relat. Mater.201223232012DRM....23...23M10.1016/j.diamond.2011.12.018 FengZHYangHZhangSMDuanLHWangHWangYTJ. Cryst. Growth20022352072002JCrGr.235..207F10.1016/S0022-0248(01)01914-5 VickersMEKappersMJDattaRMcAleeseCSmeetonTMRaymentFDGHumphreysCJJ. Phys. D Appl. Phys.200538A992005JPhD...38A..99V10.1088/0022-3727/38/10A/019 ChiouCYWangCCLingYCChiangCIAppl. Surf. Sci.2003203–20448248510.1016/S0169-4332(02)00751-1 ChungHMChuangWCPanYCTsaiCCLeeMCChenWHChenWKChiangCILinCHChangHAppl. Phys. Lett.2000768972000ApPhL..76..897C10.1063/1.125622 NorthrupJEVan de WalleCGAppl. Phys. Lett.20048443222004ApPhL..84.4322N10.1063/1.1757020 DamCECHagemanPRvan EnckevortWJPBohnenTLarsenPKJ. Cryst. Growth2007307192007JCrGr.307...19D10.1016/j.jcrysgro.2007.06.005 KumakuraKMakimotoTKobayashiNJ. Appl. Phys.20039333702003JAP....93.3370K10.1063/1.1545155 WeimannNGEastmanLFDoppalapudiDNgHMMoustakasTDJ. Appl. Phys.19988336561998JAP....83.3656W10.1063/1.366585 HeyingBTarsaEJElsassCRFiniPDenBaarsSPSpeckJSJ. Appl. Phys.19998564701999JAP....85.6470H10.1063/1.370150 WrightAFGrossnerUlrikeAppl. Phys. Lett.19987327511998ApPhL..73.2751W10.1063/1.122579 FrankFCActa Crystallogr.1951449710.1107/S0365110X51001690 KeW-CLeeS-JChenS-LKaoC-YHoungW-CMater. Chem. Phys.20121331029 Martınez-CriadoGCrosACantareroADimitrovRAmbacherOStutzmannMJ. Appl. Phys.20008834702000JAP....88.3470M10.1063/1.1289794 LookDCReynoldsDCHemskyJWSizeloveJRJonesRLMolnarRJPhys. Rev. Lett.19977922731997PhRvL..79.2273L10.1103/PhysRevLett.79.2273 NeugebauerJ.ZywietzT.K.SchefflerM.NorthrupJ.E.ChenH.FeenstraR.M.Phys. Rev. Lett.2003900561011 KauserM.Z.OsinskyA.DabiranA.M.PeartonS.J.J. Appl. Phys.2005970837151 CheongMGKimKSKimCSChoiRJYoonHSNamgungNWSuhE-KLeeHJAppl. Phys. Lett.20028010012002ApPhL..80.1001C10.1063/1.1448666 YamaguchiSIwamuraYWatanabeYKosakiMYukawaYNittaSKamiyamaSAmanoHAkasakiIPhys. Stat. Sol. a20021924532002PSSAR.192..453Y10.1002/1521-396X(200208)192:2<453::AID-PSSA453>3.0.CO;2-I LeeC-RLeemJ-YNohS-KParkS-ELeeJ-IKimC-SSonS-JLeemK-YJ. Cryst. Growth19981933001998JCrGr.193..300L10.1016/S0022-0248(98)00436-9 ME Vickers (8384_CR13) 2005; 38 D Lancefield (8384_CR35) 2001; 13 JE Northrup (8384_CR21) 2004; 84 C-R Lee (8384_CR2) 1998; 193 Q Yan (8384_CR27) 2012; 100 F Jiang (8384_CR26) 2006; 89 Y Aoyagi (8384_CR6) 2011; 99 T Schmidt (8384_CR1) 2011; 248 G Martınez-Criado (8384_CR3) 2000; 88 C Simbrunner (8384_CR4) 2007; 90 8384_CR7 8384_CR19 R Chierchia (8384_CR25) 2003; 93 DC Look (8384_CR17) 1997; 79 8384_CR18 ZH Feng (8384_CR20) 2002; 235 FC Chang (8384_CR8) 2002; 40 S Yamaguchi (8384_CR9) 2002; 192 CEC Dam (8384_CR23) 2007; 307 B Heying (8384_CR11) 1999; 85 FC Frank (8384_CR10) 1951; 4 MG Cheong (8384_CR15) 2002; 80 S Yamaguchi (8384_CR14) 2001; 64 K Kumakura (8384_CR33) 2003; 93 8384_CR5 JD Albrecht (8384_CR34) 2002; 92 JC Zhang (8384_CR12) 2004; 268 CY Chiou (8384_CR24) 2003; 203–204 W-C Ke (8384_CR28) 2012; 133 NG Weimann (8384_CR16) 1998; 83 P Kozodoy (8384_CR32) 2000; 87 Orest Malyk (8384_CR31) 2012; 23 HM Chung (8384_CR22) 2000; 76 YL Xian (8384_CR30) 2011; 325 AF Wright (8384_CR29) 1998; 73 |
| References_xml | – volume: 80 start-page: 1001 year: 2002 ident: 8384_CR15 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1448666 contributor: fullname: MG Cheong – ident: 8384_CR18 doi: 10.1103/PhysRevLett.90.056101 – volume: 99 start-page: 112110 year: 2011 ident: 8384_CR6 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3641476 contributor: fullname: Y Aoyagi – volume: 87 start-page: 1832 year: 2000 ident: 8384_CR32 publication-title: J. Appl. Phys. doi: 10.1063/1.372098 contributor: fullname: P Kozodoy – ident: 8384_CR19 – ident: 8384_CR5 – volume: 73 start-page: 2751 year: 1998 ident: 8384_CR29 publication-title: Appl. Phys. Lett. doi: 10.1063/1.122579 contributor: fullname: AF Wright – ident: 8384_CR7 – volume: 64 start-page: 035318 year: 2001 ident: 8384_CR14 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.64.035318 contributor: fullname: S Yamaguchi – volume: 84 start-page: 4322 year: 2004 ident: 8384_CR21 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1757020 contributor: fullname: JE Northrup – volume: 93 start-page: 3370 year: 2003 ident: 8384_CR33 publication-title: J. Appl. Phys. doi: 10.1063/1.1545155 contributor: fullname: K Kumakura – volume: 92 start-page: 3803 year: 2002 ident: 8384_CR34 publication-title: J. Appl. Phys. doi: 10.1063/1.1503392 contributor: fullname: JD Albrecht – volume: 83 start-page: 3656 year: 1998 ident: 8384_CR16 publication-title: J. Appl. Phys. doi: 10.1063/1.366585 contributor: fullname: NG Weimann – volume: 203–204 start-page: 482 year: 2003 ident: 8384_CR24 publication-title: Appl. Surf. Sci. doi: 10.1016/S0169-4332(02)00751-1 contributor: fullname: CY Chiou – volume: 133 start-page: 1029 year: 2012 ident: 8384_CR28 publication-title: Mater. Chem. Phys. doi: 10.1016/j.matchemphys.2012.01.128 contributor: fullname: W-C Ke – volume: 100 start-page: 142110 year: 2012 ident: 8384_CR27 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3699009 contributor: fullname: Q Yan – volume: 193 start-page: 300 year: 1998 ident: 8384_CR2 publication-title: J. Cryst. Growth doi: 10.1016/S0022-0248(98)00436-9 contributor: fullname: C-R Lee – volume: 4 start-page: 497 year: 1951 ident: 8384_CR10 publication-title: Acta Crystallogr. doi: 10.1107/S0365110X51001690 contributor: fullname: FC Frank – volume: 235 start-page: 207 year: 2002 ident: 8384_CR20 publication-title: J. Cryst. Growth doi: 10.1016/S0022-0248(01)01914-5 contributor: fullname: ZH Feng – volume: 79 start-page: 2273 year: 1997 ident: 8384_CR17 publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.79.2273 contributor: fullname: DC Look – volume: 248 start-page: 1810 year: 2011 ident: 8384_CR1 publication-title: Phys. Status Solidi B doi: 10.1002/pssb.201046531 contributor: fullname: T Schmidt – volume: 307 start-page: 19 year: 2007 ident: 8384_CR23 publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2007.06.005 contributor: fullname: CEC Dam – volume: 325 start-page: 32 year: 2011 ident: 8384_CR30 publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2011.04.030 contributor: fullname: YL Xian – volume: 192 start-page: 453 year: 2002 ident: 8384_CR9 publication-title: Phys. Stat. Sol. a doi: 10.1002/1521-396X(200208)192:2<453::AID-PSSA453>3.0.CO;2-I contributor: fullname: S Yamaguchi – volume: 268 start-page: 24 year: 2004 ident: 8384_CR12 publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2004.04.102 contributor: fullname: JC Zhang – volume: 90 start-page: 142108 year: 2007 ident: 8384_CR4 publication-title: Appl. Phys. Lett. doi: 10.1063/1.2719171 contributor: fullname: C Simbrunner – volume: 13 start-page: 8939 year: 2001 ident: 8384_CR35 publication-title: J. Phys.:Condens.Matter contributor: fullname: D Lancefield – volume: 93 start-page: 8918 year: 2003 ident: 8384_CR25 publication-title: J. Appl. Phys. doi: 10.1063/1.1571217 contributor: fullname: R Chierchia – volume: 89 start-page: 161915 year: 2006 ident: 8384_CR26 publication-title: Appl. Phys. Lett. doi: 10.1063/1.2364060 contributor: fullname: F Jiang – volume: 40 start-page: 637 year: 2002 ident: 8384_CR8 publication-title: Chinese J. Phys. contributor: fullname: FC Chang – volume: 88 start-page: 3470 year: 2000 ident: 8384_CR3 publication-title: J. Appl. Phys. doi: 10.1063/1.1289794 contributor: fullname: G Martınez-Criado – volume: 38 start-page: A99 year: 2005 ident: 8384_CR13 publication-title: J. Phys. D Appl. Phys. doi: 10.1088/0022-3727/38/10A/019 contributor: fullname: ME Vickers – volume: 76 start-page: 897 year: 2000 ident: 8384_CR22 publication-title: Appl. Phys. Lett. doi: 10.1063/1.125622 contributor: fullname: HM Chung – volume: 85 start-page: 6470 year: 1999 ident: 8384_CR11 publication-title: J. Appl. Phys. doi: 10.1063/1.370150 contributor: fullname: B Heying – volume: 23 start-page: 23 year: 2012 ident: 8384_CR31 publication-title: Diam. Relat. Mater. doi: 10.1016/j.diamond.2011.12.018 contributor: fullname: Orest Malyk |
| SSID | ssj0000422 |
| Score | 2.1866353 |
| Snippet | Mg-doped, 1-μm-thick, p-type GaN films were grown by metal-organic chemical vapor deposition using indium-assisted method. The influence of flow rate ratio of... |
| SourceID | crossref springer |
| SourceType | Aggregation Database Publisher |
| StartPage | 1561 |
| SubjectTerms | Characterization and Evaluation of Materials Condensed Matter Physics Machines Manufacturing Nanotechnology Optical and Electronic Materials Physics Physics and Astronomy Processes Surfaces and Interfaces Thin Films |
| Title | Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth |
| URI | https://link.springer.com/article/10.1007/s00339-014-8384-5 |
| Volume | 116 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LS8NAEB5qi6AH0apYX-zBk7JiNrtpcizSWhR70YLiIexTRZuUNkX8986mDy3owVsOSyDf7M58s99kBuAkUpyHUWIoC4WivGkslVo6qqXQkWomTpfj2257UbfPrx_EQwXY4uoiezufK5Klo1786-anjvnSHk7jMOZUrEDNcwe_k_us9e19-VQ5SDh63zCJ5krmb69YjkXLQmgZXzqbsDEjhqQ1teQWVGxWh_Uf7QLrsFqWa-rxNjzdDXKEmIwnIye1JYMc4SovyInMDHnPP4h5Hfs45XEnxlepF58kd2RIr2SP-Gr3Z-Ll6smAIn32tjbkGVPy4mUH-p32_WWXzsYkUM0ZL6iJA4tJi3W2yU0shMVHwfEDE4GOGM-fjZWVF4GKg4gFXIURBiiMylowqQwmortQzfLM7gFRyB9YbF2INIBrE8jAoWMOgpA7FzYVa8DpHLB0OO2GkS76Hpfopohu6tFNRQPO5pCms4Mx_nv1_r9WH8Aa83Ysi70OoVqMJvYI2UGhjqHWunq8aR-X2-ILKtqzeA |
| link.rule.ids | 315,786,790,27957,27958,41116,41558,42185,42627,52146,52269 |
| linkProvider | Springer Nature |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LS8NAEF60IupBtCrW5x48KQtms5vHsYi1atuLLRQ8hH1WwTalSRH_vbNpUhX04C2HJbDfZOeR79sZhC4CyZgfxJpQn0vCQm2IUMISJbgKZBhbVYxv6_aC9oA9DPmwvMedVWr3ipIsPPXyspsbO-a0PYxEfsQIX0Vrrp26q7gGtPnlftmCOogZuF8_Dioq87dX_AxGP5nQIsC0dtB2mRni5sKUu2jFTOpo61u_wDpaL_SaKttDz0_jFDDG2XxmhTJ4nAJexR9yLCYav6XvWL9mLlA54LF2MvX8A6cWT8md6GEndx9hx1fPxwTyZ2dsjUdQk-cv-2jQuu3ftEk5J4EoRllOdOQZqFqMNSHTEecGHjmDDcYcPDEcQBNJI649GXkB9Zj0A4hQEJYVp0JqqEQPUG2STswhwhISCBoZ60MewJT2hGfBM3uez6z1Q0kb6LICLJku2mEky8bHBboJoJs4dBPeQFcVpEl5MrK_Vx_9a_U52mj3u52kc997PEab1Nm0UH6doFo-m5tTSBVyeVZ8Gp8lWbU_ |
| linkToPdf | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LS8NAEF60ouhBtCrW5x48KUtNspvHsai1voqghYKHsM8q2KQ0KeK_dzZpqgU9eMthCew32flmMt_OIHTiC0o9P1LE9ZggNFCacMkNkZxJXwSRkcX4toeu3-nR2z7rT-ecZpXavSpJlncabJemJG-OlGnOLr7ZEWRW50NJ6IWUsEW0ZJnRarp6buvbFdOyjBBRcMVe5Fdlzd9eMU9M81XRgmzaG2h9GiXiVmnWTbSgkzpa-9E7sI6WC-2mzLbQy9MwBbxxNhkbLjUepoBd8bcc80Th9_QDq7fMkpY1AlZWsp5_4tTgEbnmXWyl7wNsa9eTIYFY2hpe4QHk5_nrNuq1r54vOmQ6M4FI6tKcqNDRkMFoowOqQsY0PDIKG4wYeGU4jDoUmp87InR816HC84GtgKIlc7lQkJXuoFqSJnoXYQHBhBtq40FMQKVyuGPASzuOR43xAuE20GkFWDwqW2PEsybIBboxoBtbdGPWQGcVpPH0lGR_r9771-pjtPJ42Y7vb7p3-2jVtSYtRGAHqJaPJ_oQooZcHBVfxhcObbmE |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Smooth+surface+morphology+and+low+dislocation+density+of+p-GaN+using+indium-assisted+growth&rft.jtitle=Applied+physics.+A%2C+Materials+science+%26+processing&rft.au=Zhang%2C+Kexiong&rft.au=Liang%2C+Hongwei&rft.au=Shen%2C+Rensheng&rft.au=Song%2C+Shiwei&rft.date=2014-09-01&rft.issn=0947-8396&rft.eissn=1432-0630&rft.volume=116&rft.issue=4&rft.spage=1561&rft.epage=1566&rft_id=info:doi/10.1007%2Fs00339-014-8384-5&rft.externalDBID=n%2Fa&rft.externalDocID=10_1007_s00339_014_8384_5 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0947-8396&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0947-8396&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0947-8396&client=summon |