An isochronal kinetic study of intermetallic compound growth in Sn/Cu thin film couples
Growth kinetics of Cu6Sn5 and Cu3Sn compounds in Cu/Sn thin film couples was studied by in situ resistivity measurements and X-ray diffraction analysis. The Cu6Sn5 and Cu3Sn intermetallic compounds were found to form in sequence when the Cu/Sn bimetallic samples were isochronally annealed from room...
Saved in:
Published in | Thin solid films Vol. 515; no. 4; pp. 2781 - 2785 |
---|---|
Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Lausanne
Elsevier B.V
05.12.2006
Elsevier Science |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | Growth kinetics of Cu6Sn5 and Cu3Sn compounds in Cu/Sn thin film couples was studied by in situ resistivity measurements and X-ray diffraction analysis. The Cu6Sn5 and Cu3Sn intermetallic compounds were found to form in sequence when the Cu/Sn bimetallic samples were isochronally annealed from room temperature to 220 °C. A kinetic model was presented to explain sequential appearance of the Cu6Sn5 phase and the Cu3Sn phase during the isochronal annealing process. The activation energies of Cu6Sn5 and Cu3Sn compound growth in Cu/Sn thin film couples were determined from the in situ resistivity measurements to be 0.87 eV and 1.05 eV, respectively. |
---|---|
AbstractList | Growth kinetics of Cu6Sn5 and Cu3Sn compounds in Cu/Sn thin film couples was studied by in situ resistivity measurements and X-ray diffraction analysis. The Cu6Sn5 and Cu3Sn intermetallic compounds were found to form in sequence when the Cu/Sn bimetallic samples were isochronally annealed from room temperature to 220 °C. A kinetic model was presented to explain sequential appearance of the Cu6Sn5 phase and the Cu3Sn phase during the isochronal annealing process. The activation energies of Cu6Sn5 and Cu3Sn compound growth in Cu/Sn thin film couples were determined from the in situ resistivity measurements to be 0.87 eV and 1.05 eV, respectively. Growth kinetics of Cu6Sn5 and Cu3Sn compounds in Cu/Sn thin film couples was studied by in situ resistivity measurements and X-ray diffraction analysis. The Cu6Sn5 and Cu3Sn intermetallic compounds were found to form in sequence when the Cu/Sn bimetallic samples were isochronally annealed from room temperature to 220 deg C. A kinetic model was presented to explain sequential appearance of the Cu6Sn5 phase and the Cu3Sn phase during the isochronal annealing process. The activation energies of Cu6Sn5 and Cu3Sn compound growth in Cu/Sn thin film couples were determined from the in situ resistivity measurements to be 0*87 eV and 1*05 eV, respectively. |
Author | Liao, C.N. Wei, C.T. |
Author_xml | – sequence: 1 givenname: C.N. surname: Liao fullname: Liao, C.N. email: cnliao@mx.nthu.edu.tw – sequence: 2 givenname: C.T. surname: Wei fullname: Wei, C.T. |
BackLink | http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18440154$$DView record in Pascal Francis |
BookMark | eNp9UE1P3DAQtRBILNAf0Fsu7S3ZseN8qSe0KrQSUg-AOFqOM-5669hb2wHtv8erReqtpxnNvDfz3rsi5847JOQzhYoCbde7KkVdMYC2gqYC1pyRFe27oWRdTc_JCoBD2cIAl-Qqxh0AUMbqFXm5dYWJXm2Dd9IWf4zDZFQR0zIdCq8L4xKGGZO0No-Vn_d-cVPxO_i3tM3b4tGtN0uRtrnVxs4ZsuwtxhtyoaWN-OmjXpPnu-9Pmx_lw6_7n5vbh1JxxlMpR1nXmk9ScVADV1myYmMrx4Z32GHbZ2-UqnFqO9oNUjM-QAtdi7qexrHm9TX5erq7D_7vgjGJ2USF1kqHfomCDazPXusMpCegCj7GgFrsg5llOAgK4hih2IkcoThGKKAROcLM-fJxXEYlrQ7SKRP_EXvOgTZHEd9OOMxOXw0GEZVBp3AyAVUSkzf_-fIOJrqIwQ |
CODEN | THSFAP |
CitedBy_id | crossref_primary_10_1002_adem_201400226 crossref_primary_10_4028_www_scientific_net_DDF_344_107 crossref_primary_10_1007_s12613_010_0341_5 crossref_primary_10_1134_S002247661607009X crossref_primary_10_4028_www_scientific_net_DDF_309_310_167 crossref_primary_10_3103_S1062873813020056 crossref_primary_10_7791_jspmee_6_188 crossref_primary_10_1016_j_tsf_2009_11_080 crossref_primary_10_1016_j_jallcom_2012_04_037 crossref_primary_10_1016_j_actamat_2008_11_006 crossref_primary_10_1016_j_solener_2017_06_063 crossref_primary_10_1038_srep09291 crossref_primary_10_1142_S0218625X18500233 crossref_primary_10_1016_S1003_6326_09_60102_3 |
Cites_doi | 10.1016/0040-6090(81)90156-5 10.1063/1.351487 10.1016/0169-4332(90)90071-7 10.1063/1.114596 10.1016/0001-6160(82)90201-2 10.1007/BF02675563 10.1016/0001-6160(73)90190-9 10.1103/PhysRevB.53.16027 10.1063/1.369779 10.1016/0040-6090(82)90490-4 10.1063/1.331028 10.1016/S0169-4332(02)01214-X 10.2320/matertrans1960.16.539 10.1016/S0026-2714(01)00015-4 10.1016/S0921-5107(98)00202-5 |
ContentType | Journal Article |
Copyright | 2006 Elsevier B.V. 2007 INIST-CNRS |
Copyright_xml | – notice: 2006 Elsevier B.V. – notice: 2007 INIST-CNRS |
DBID | IQODW AAYXX CITATION 7SR 7U5 8BQ 8FD JG9 L7M |
DOI | 10.1016/j.tsf.2006.05.025 |
DatabaseName | Pascal-Francis CrossRef Engineered Materials Abstracts Solid State and Superconductivity Abstracts METADEX Technology Research Database Materials Research Database Advanced Technologies Database with Aerospace |
DatabaseTitle | CrossRef Materials Research Database Engineered Materials Abstracts Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace METADEX |
DatabaseTitleList | Materials Research Database |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering Physics |
EISSN | 1879-2731 |
EndPage | 2785 |
ExternalDocumentID | 10_1016_j_tsf_2006_05_025 18440154 S0040609006006705 |
GroupedDBID | --K --M -~X .DC .~1 0R~ 123 1B1 1RT 1~. 1~5 4.4 457 4G. 5VS 7-5 71M 8P~ 9JN AABNK AABXZ AACTN AAEDT AAEDW AAEPC AAIAV AAIKJ AAKOC AALRI AAOAW AAQFI AAXUO ABFNM ABFRF ABJNI ABMAC ABNEU ABXDB ABXRA ABYKQ ACBEA ACDAQ ACFVG ACGFO ACGFS ACNNM ACRLP ADBBV ADEZE ADMUD AEBSH AEFWE AEKER AENEX AEZYN AFKWA AFRZQ AFTJW AGUBO AGYEJ AHHHB AIEXJ AIKHN AITUG AIVDX AJBFU AJOXV ALMA_UNASSIGNED_HOLDINGS AMFUW AMRAJ AXJTR BKOJK BLXMC CS3 DU5 EBS EFJIC EFLBG EJD EO8 EO9 EP2 EP3 F5P FDB FIRID FNPLU FYGXN G-Q HZ~ IHE J1W KOM M24 M38 M41 MAGPM MO0 N9A O-L O9- OAUVE OGIMB OZT P-9 P2P PC. Q38 RIG RNS ROL RPZ SDF SDG SDP SES SPC SPCBC SPD SSM SSQ SSZ T5K TWZ WH7 XFK ZMT ~G- 29Q 6TJ AAQXK AAYJJ ABPIF ABPTK AFFNX AGHFR ASPBG AVWKF AZFZN BBWZM FEDTE FGOYB G-2 G8K GBLVA HMV HX~ IQODW NDZJH P-8 R2- SEW SMS SPG VOH WUQ AAXKI AAYXX AFJKZ AKRWK CITATION HVGLF 7SR 7U5 8BQ 8FD JG9 L7M |
ID | FETCH-LOGICAL-c424t-aba33f4dac40c94c187c2b6ab547e7e6801611cbd67179af24906076ef3dbb343 |
IEDL.DBID | AIKHN |
ISSN | 0040-6090 |
IngestDate | Fri Aug 16 04:58:31 EDT 2024 Thu Sep 26 19:10:43 EDT 2024 Sun Oct 29 17:08:49 EDT 2023 Fri Feb 23 02:20:50 EST 2024 |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 4 |
Keywords | Thin film reaction Electrical properties Intermetallic compound Activation analysis Annealing Electrical conductivity Intermetallic compounds Growth rate Thin films Kinetic model Ambient temperature Growth mechanism Copper Activation energy X-ray diffraction analysis |
Language | English |
License | CC BY 4.0 |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c424t-aba33f4dac40c94c187c2b6ab547e7e6801611cbd67179af24906076ef3dbb343 |
Notes | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
PQID | 29280013 |
PQPubID | 23500 |
PageCount | 5 |
ParticipantIDs | proquest_miscellaneous_29280013 crossref_primary_10_1016_j_tsf_2006_05_025 pascalfrancis_primary_18440154 elsevier_sciencedirect_doi_10_1016_j_tsf_2006_05_025 |
PublicationCentury | 2000 |
PublicationDate | 2006-12-05 |
PublicationDateYYYYMMDD | 2006-12-05 |
PublicationDate_xml | – month: 12 year: 2006 text: 2006-12-05 day: 05 |
PublicationDecade | 2000 |
PublicationPlace | Lausanne |
PublicationPlace_xml | – name: Lausanne |
PublicationTitle | Thin solid films |
PublicationYear | 2006 |
Publisher | Elsevier B.V Elsevier Science |
Publisher_xml | – name: Elsevier B.V – name: Elsevier Science |
References | Onishi, Fujibuchi (bib1) 1975; 16 Dhabal, Ghosh (bib13) 2003; 211 Tu (bib11) 1973; 21 Chopra, Ohring (bib12) 1981; 86 Dreyer, Neils, Chromik, Grosman, Cotts (bib6) 1995; 67 Chan, So, Lai (bib9) 1998; 55 Tu, Mayer, Feldmann (bib15) 1992 Chopra, Ohring, Oswald (bib3) 1982; 94 Frederikse, Fields, Feldman (bib7) 1992; 72 Tu, Thompson (bib2) 1982; 30 Abel, Cohen, Davies, Moulin, Schmaus (bib4) 1990; 44 Kim, Tu (bib16) 1996; 53 Stepniak (bib8) 2001; 41 Mei, Sunwoo, Morris (bib5) 1992; 23A Gösele, Tu (bib14) 1982; 53 Liu, Chen, Mal, Tu (bib10) 1990; 85 Dhabal (10.1016/j.tsf.2006.05.025_bib13) 2003; 211 Gösele (10.1016/j.tsf.2006.05.025_bib14) 1982; 53 Liu (10.1016/j.tsf.2006.05.025_bib10) 1990; 85 Tu (10.1016/j.tsf.2006.05.025_bib2) 1982; 30 Chopra (10.1016/j.tsf.2006.05.025_bib3) 1982; 94 Stepniak (10.1016/j.tsf.2006.05.025_bib8) 2001; 41 Chopra (10.1016/j.tsf.2006.05.025_bib12) 1981; 86 Mei (10.1016/j.tsf.2006.05.025_bib5) 1992; 23A Chan (10.1016/j.tsf.2006.05.025_bib9) 1998; 55 Tu (10.1016/j.tsf.2006.05.025_bib15) 1992 Kim (10.1016/j.tsf.2006.05.025_bib16) 1996; 53 Frederikse (10.1016/j.tsf.2006.05.025_bib7) 1992; 72 Dreyer (10.1016/j.tsf.2006.05.025_bib6) 1995; 67 Abel (10.1016/j.tsf.2006.05.025_bib4) 1990; 44 Onishi (10.1016/j.tsf.2006.05.025_bib1) 1975; 16 Tu (10.1016/j.tsf.2006.05.025_bib11) 1973; 21 |
References_xml | – volume: 41 start-page: 735 year: 2001 ident: bib8 publication-title: Microelectron. Reliab. contributor: fullname: Stepniak – volume: 53 start-page: 3252 year: 1982 ident: bib14 publication-title: J. Appl. Phys. contributor: fullname: Tu – volume: 53 start-page: 16027 year: 1996 ident: bib16 publication-title: Phys. Rev., B contributor: fullname: Tu – volume: 16 start-page: 539 year: 1975 ident: bib1 publication-title: Trans. Jpn. Inst. Met. contributor: fullname: Fujibuchi – volume: 94 start-page: 279 year: 1982 ident: bib3 publication-title: Thin Solid Films contributor: fullname: Oswald – volume: 55 start-page: 5 year: 1998 ident: bib9 publication-title: Mater. Sci. Eng., B, Solid-State Mater. Adv. Technol. contributor: fullname: Lai – volume: 86 start-page: 43 year: 1981 ident: bib12 publication-title: Thin Solid Films contributor: fullname: Ohring – volume: 67 start-page: 2795 year: 1995 ident: bib6 publication-title: Appl. Phys. Lett. contributor: fullname: Cotts – start-page: 330 year: 1992 ident: bib15 publication-title: Electronic thin film science contributor: fullname: Feldmann – volume: 72 start-page: 2879 year: 1992 ident: bib7 publication-title: J. Appl. Phys. contributor: fullname: Feldman – volume: 30 start-page: 947 year: 1982 ident: bib2 publication-title: Acta Metall. contributor: fullname: Thompson – volume: 23A start-page: 857 year: 1992 ident: bib5 publication-title: Metall. Trans., A, Phys. Metall. Mater. Sci. contributor: fullname: Morris – volume: 211 start-page: 13 year: 2003 ident: bib13 publication-title: Appl. Surf. Sci. contributor: fullname: Ghosh – volume: 21 start-page: 347 year: 1973 ident: bib11 publication-title: Acta Metall. contributor: fullname: Tu – volume: 85 start-page: 3882 year: 1990 ident: bib10 publication-title: J. Appl. Phys. contributor: fullname: Tu – volume: 44 start-page: 17 year: 1990 ident: bib4 publication-title: Appl. Surf. Sci. contributor: fullname: Schmaus – volume: 86 start-page: 43 year: 1981 ident: 10.1016/j.tsf.2006.05.025_bib12 publication-title: Thin Solid Films doi: 10.1016/0040-6090(81)90156-5 contributor: fullname: Chopra – volume: 72 start-page: 2879 year: 1992 ident: 10.1016/j.tsf.2006.05.025_bib7 publication-title: J. Appl. Phys. doi: 10.1063/1.351487 contributor: fullname: Frederikse – volume: 44 start-page: 17 year: 1990 ident: 10.1016/j.tsf.2006.05.025_bib4 publication-title: Appl. Surf. Sci. doi: 10.1016/0169-4332(90)90071-7 contributor: fullname: Abel – volume: 67 start-page: 2795 year: 1995 ident: 10.1016/j.tsf.2006.05.025_bib6 publication-title: Appl. Phys. Lett. doi: 10.1063/1.114596 contributor: fullname: Dreyer – volume: 30 start-page: 947 year: 1982 ident: 10.1016/j.tsf.2006.05.025_bib2 publication-title: Acta Metall. doi: 10.1016/0001-6160(82)90201-2 contributor: fullname: Tu – volume: 23A start-page: 857 year: 1992 ident: 10.1016/j.tsf.2006.05.025_bib5 publication-title: Metall. Trans., A, Phys. Metall. Mater. Sci. doi: 10.1007/BF02675563 contributor: fullname: Mei – volume: 21 start-page: 347 year: 1973 ident: 10.1016/j.tsf.2006.05.025_bib11 publication-title: Acta Metall. doi: 10.1016/0001-6160(73)90190-9 contributor: fullname: Tu – volume: 53 start-page: 16027 year: 1996 ident: 10.1016/j.tsf.2006.05.025_bib16 publication-title: Phys. Rev., B doi: 10.1103/PhysRevB.53.16027 contributor: fullname: Kim – start-page: 330 year: 1992 ident: 10.1016/j.tsf.2006.05.025_bib15 contributor: fullname: Tu – volume: 85 start-page: 3882 year: 1990 ident: 10.1016/j.tsf.2006.05.025_bib10 publication-title: J. Appl. Phys. doi: 10.1063/1.369779 contributor: fullname: Liu – volume: 94 start-page: 279 year: 1982 ident: 10.1016/j.tsf.2006.05.025_bib3 publication-title: Thin Solid Films doi: 10.1016/0040-6090(82)90490-4 contributor: fullname: Chopra – volume: 53 start-page: 3252 year: 1982 ident: 10.1016/j.tsf.2006.05.025_bib14 publication-title: J. Appl. Phys. doi: 10.1063/1.331028 contributor: fullname: Gösele – volume: 211 start-page: 13 year: 2003 ident: 10.1016/j.tsf.2006.05.025_bib13 publication-title: Appl. Surf. Sci. doi: 10.1016/S0169-4332(02)01214-X contributor: fullname: Dhabal – volume: 16 start-page: 539 year: 1975 ident: 10.1016/j.tsf.2006.05.025_bib1 publication-title: Trans. Jpn. Inst. Met. doi: 10.2320/matertrans1960.16.539 contributor: fullname: Onishi – volume: 41 start-page: 735 year: 2001 ident: 10.1016/j.tsf.2006.05.025_bib8 publication-title: Microelectron. Reliab. doi: 10.1016/S0026-2714(01)00015-4 contributor: fullname: Stepniak – volume: 55 start-page: 5 year: 1998 ident: 10.1016/j.tsf.2006.05.025_bib9 publication-title: Mater. Sci. Eng., B, Solid-State Mater. Adv. Technol. doi: 10.1016/S0921-5107(98)00202-5 contributor: fullname: Chan |
SSID | ssj0001223 |
Score | 1.9589832 |
Snippet | Growth kinetics of Cu6Sn5 and Cu3Sn compounds in Cu/Sn thin film couples was studied by in situ resistivity measurements and X-ray diffraction analysis. The... |
SourceID | proquest crossref pascalfrancis elsevier |
SourceType | Aggregation Database Index Database Publisher |
StartPage | 2781 |
SubjectTerms | Activation analysis Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science; rheology Electrical properties Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Intermetallic compound Materials science Methods of deposition of films and coatings; film growth and epitaxy Physics Theory and models of film growth Thin film reaction |
Title | An isochronal kinetic study of intermetallic compound growth in Sn/Cu thin film couples |
URI | https://dx.doi.org/10.1016/j.tsf.2006.05.025 https://search.proquest.com/docview/29280013 |
Volume | 515 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1LT9tAEB5BEFJRhQoUkQJhDz1VMvFjvLaPUQRKG8EBiuC2Wtu7TUpwIuxc-9s749g8VMShJ1vrHe_qG3seu7MzAF89qbPI2NQh7Z04KMnd0YnkZTg3yGMy-APL65AXl3J0gz_uwrs1GLZnYTisspH9K5leS-umpd-g2V9Mp3zGl5SRm3BGET5sEq7DBqkjxA5sDL6PR5dPAtnz_afgOSZoNzfrMK-qtM2WRHjqcsHst9XTx4UuCTS7qnbxj-CutdH5J9huzEgxWM10B9ZMsQtbL5IL7sJmHdyZlXtwOyjElLjAeXCJ6J76EJmoM8uKuRWcMuLxwZAZPqNmDjLnWkviF3no1YSeiuuiP1yKakK3djp7oC7LxcyUn-Hm_OzncOQ0BRWcDH2sHJ3qgLDPdYZulmDmxVHmp1KnIUYmMjJm-8_L0lySk5doS64ZgRtJY4M8TQMM9qFTzAtzACIkJkpSbDK2Ful9iYdRjD5nGs5lHGEXvrU4qsUqb4ZqA8p-KwKd619K5YaKQO8CtkirV8xXJNffI-u94srzQDEi24ZdOGnZpOiv4a0QXZj5slR-4sds_X75v5EP4YPfFDBywyPoVI9Lc0zGSZX2YP30j9drPkG-jq9ux38B-hjjbg |
link.rule.ids | 315,786,790,4521,24144,27955,27956,45618,45712 |
linkProvider | Elsevier |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1LT8MwDLZ4CAFCiKcYzxw4IZX1kabtEU1M47ULm-AWpW0Cg9FNtLvy27G7lodAHLhVadJUdmt_Tr7YAMeOUEmgTWyh944sLjDcUZGgZTjbS0ME_J6hdcibruj0-eW9fz8DrfosDNEqK9s_temlta5ampU0m-PBgM74ojOyI8ooQodN_FmYJzRAvK7Tt0-eh-O6H9Q56l5vbZYkryI31YaEf2pTuezfndPKWOUoMjOtdfHDbJe-qL0GqxWIZGfT91yHGZ1twPKX1IIbsFBSO5N8E-7OMjZAHVAWXBz0jH1wGCvzyrKRYZQw4vVFIwgfYjNRzKnSEnvA-Lx4xLvsNmu2Jqx4xEszGL5gl8l4qPMt6LfPe62OVZVTsBLu8sJSsfJQ8qlKuJ1EPHHCIHFjoWKfBzrQIiT05yRxKjDEi5TBwAxFGwhtvDSOPe5tw1w2yvQOMB9VKNCtidAYjs-LHB6E3KU8w6kIA96Ak1qOcjzNmiFrOtmTRKFT9UshbV-i0BvAa0nLb6qXaNX_Gnb4TSufE4WcEzJswFGtJon_DG2EqEyPJrl0Izck7Lv7v5mPYLHTu7mW1xfdqz1YcqtSRra_D3PF60QfIEwp4sPyM3wH5FLioA |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=An+isochronal+kinetic+study+of+intermetallic+compound+growth+in+Sn%2FCu+thin+film+couples&rft.jtitle=Thin+solid+films&rft.au=Liao%2C+C.N.&rft.au=Wei%2C+C.T.&rft.date=2006-12-05&rft.issn=0040-6090&rft.volume=515&rft.issue=4&rft.spage=2781&rft.epage=2785&rft_id=info:doi/10.1016%2Fj.tsf.2006.05.025&rft.externalDBID=n%2Fa&rft.externalDocID=10_1016_j_tsf_2006_05_025 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0040-6090&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0040-6090&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0040-6090&client=summon |