Electrical impact of MoSe2 on CIGS thin-film solar cells

• Published in: Physical chemistry chemical physics : PCCP Vol. 15; no. 41; pp. 18174 - 18178
• Main Authors: HSIAO, Kuo-Jui, LIU, Jing-Da, HSIEH, Hsing-Hua, JIANG, Ting-Shiuan
• Format: Journal Article
• Language: English
• Published: Cambridge Royal Society of Chemistry 01.01.2013
• Subjects: Chemistry; Exact sciences and technology; General and physical chemistry; Surface physical chemistry; Device; Transition element compounds; Glass; Sulfurization; Cadmium sulfide; Conversion; X ray diffraction; Sputtering; Thin film; Sequential; Efficiency; Numerical simulation; Solar radiation; Interface; Reflectance

The CIGS solar cell is one of the most promising photovoltaic devices due to the achievement of the highest conversion efficiency (>20%) among all thin-film solar cells. The CIGS cell has a glass/Mo/CIGS/CdS/TCO configuration, and the CIGS-Mo interface is a Schottky barrier to holes. During the s...